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Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication
Authors:
Kaijian Xing,
Daniel McEwen,
Weiyao Zhao,
Abdulhakim Bake,
David Cortie,
Jingying Liu,
Thi-Hai-Yen Vu,
James Hone,
Alastair Stacey,
Mark T. Edmonds,
Kenji Watanabe,
Takashi Taniguchi,
Qingdong Ou,
Dong-Chen Qi,
Michael S. Fuhrer
Abstract:
Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place tran…
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Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of pre-fabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any surface treatments or sacrificial layers. The technique enables transfer of large-scale arbitrary metal electrodes, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. The mechanical transfer of metal electrodes from diamond onto van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-sectional high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond-transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semi metal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to other applications such as ambipolar transistor and optoelectronics, paving the way for new device architectures and high-performance devices.
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Submitted 21 May, 2024;
originally announced May 2024.
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Two stage $γ$ ray emission via an ultrahigh intensity laser pulse interaction with a laser-wakefield accelerated electron beam
Authors:
Mamat Ali Bake,
Aynisa Tursun,
Aimierding Aimidula,
Bai-Song Xie
Abstract:
We investigate the generation of twin $γ$ ray beams in collision of an ultrahigh intensity laser pulse with a laser wakefield accelerated electron beam by using particle-in-cell simulation. We consider the composed target of a homogeneous underdense preplasma in front of an ultrathin solid foil. The electrons in the preplasma are trapped and accelerated by the wakefield. When the laser pulse is re…
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We investigate the generation of twin $γ$ ray beams in collision of an ultrahigh intensity laser pulse with a laser wakefield accelerated electron beam by using particle-in-cell simulation. We consider the composed target of a homogeneous underdense preplasma in front of an ultrathin solid foil. The electrons in the preplasma are trapped and accelerated by the wakefield. When the laser pulse is reflected by the thin solid foil, the wakefield accelerated electrons continue to move forward and passing through the foil almost without the influence of the reflected laser pulse and the foil. Consequently, two groups of $γ$ ray flashes, with tunable time delay and energy, are generated by the wakefield accelerated electron beam interacting with the reflected laser pulse from the foil as well as another counter propagating petawatt laser pulse in the behind the foil. The dependence of the $γ$ photon emission on the preplasma densities, driving laser polarization and the foil are studied.
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Submitted 22 February, 2020; v1 submitted 23 October, 2019;
originally announced October 2019.
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QED cascade induced by high energy $γ$ photon in strong laser field
Authors:
Suo Tang,
Muhammad Ali Bake,
Hong-Yu Wang,
Bai-Song Xie
Abstract:
The QED cascade induced by the two counter-propagating lasers is studied. It is demonstrated that the probability of a seed-photon to create a pair is much larger than that of a seed-electron. By analyzing the dynamic characteristics of the electron and positron created by the seed-photon, it is found that the created particles are more probable to emit photons than the seed-electron. With these r…
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The QED cascade induced by the two counter-propagating lasers is studied. It is demonstrated that the probability of a seed-photon to create a pair is much larger than that of a seed-electron. By analyzing the dynamic characteristics of the electron and positron created by the seed-photon, it is found that the created particles are more probable to emit photons than the seed-electron. With these result, further more, we also demonstrate that the QED cascade can be easier to be triggered by the seed-photon than by the seed-electron with the same incident energy and the same laser.
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Submitted 9 December, 2013;
originally announced December 2013.
