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Surface recombination and out of plane diffusivity of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Eli Janzen,
James H. Edgard,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Annick Loiseau,
Julien Barjon
Abstract:
We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at…
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We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 cm$^{2}$.s$^{-1}$. Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds 10$^{5}$ cm$^{2}$.s$^{-1}$, at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials.
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Submitted 11 August, 2023; v1 submitted 10 August, 2023;
originally announced August 2023.
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Quantum well confinement and competitive radiative pathways in the luminescence of black phosphorus layers
Authors:
Etienne Carré,
Lorenzo Sponza,
Alain Lusson,
Ingrid Stenger,
Sébastien Roux,
Victor Zatko,
Bruno Dlubak,
Pierre Seneor,
Etienne Gaufrès,
Annick Loiseau,
Julien Barjon
Abstract:
Black phosphorus (BP) stands out from other 2D materials by the wide amplitude of the band-gap energy (Delta(Eg)) that sweeps an optical window from Visible (VIS) to Infrared (IR) wavelengths, depending on the layer thickness. This singularity made the optical and excitonic properties of BP difficult to map. Specifically, the literature lacks in presenting experimental and theoretical data on the…
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Black phosphorus (BP) stands out from other 2D materials by the wide amplitude of the band-gap energy (Delta(Eg)) that sweeps an optical window from Visible (VIS) to Infrared (IR) wavelengths, depending on the layer thickness. This singularity made the optical and excitonic properties of BP difficult to map. Specifically, the literature lacks in presenting experimental and theoretical data on the optical properties of BP on an extended thickness range. Here we report the study of an ensemble of photoluminescence spectra from 79 passivated BP flakes recorded at 4 K with thicknesses ranging from 4 nm to 700 nm, obtained by mechanical exfoliation. We observe that the exfoliation steps induce additional defects states that compete the radiative recombination from bound excitons observed in the crystal. We also show that the evolution of the photoluminescence energy versus thickness follows a quantum well confinement model appreciable from a thickness predicted and probed at 25 nm. The BP slabs placed in different 2D heterostructures show that the emission energy is not significantly modulated by the dielectric environment. Introduction Confinement effects
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Submitted 2 December, 2022;
originally announced December 2022.
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Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature
Authors:
Etienne Carré,
Lorenzo Sponza,
Alain Lusson,
Ingrid Stenger,
Etienne Gaufrès,
Annick Loiseau,
Julien Barjon
Abstract:
Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one…
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Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high temperature is found with a much smaller activation energy, attributed to the localization of free excitons on a shallow impurity. This analysis leads us to attribute respectively the 0.276 eV and 0.278 eV PL lines to bound excitons and free excitons in BP. As a result, the value of bulk BP bandgap is refined to 0.287 eV at 2K.
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Submitted 29 October, 2020;
originally announced October 2020.
