Active tuning of plasmon damping via light induced magnetism
Authors:
Oscar Hsu-Cheng Cheng,
Boqin Zhao,
Zachary Brawley,
Dong Hee Son,
Matthew Sheldon
Abstract:
Circularly polarized optical excitation of plasmonic nanostructures causes coherent circulating motion of their electrons, which in turn, gives rise to strong optically induced magnetization - a phenomenon known as the inverse Faraday effect (IFE). In this study we report how the IFE also significantly decreases plasmon damping. By modulating the optical polarization state incident on achiral plas…
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Circularly polarized optical excitation of plasmonic nanostructures causes coherent circulating motion of their electrons, which in turn, gives rise to strong optically induced magnetization - a phenomenon known as the inverse Faraday effect (IFE). In this study we report how the IFE also significantly decreases plasmon damping. By modulating the optical polarization state incident on achiral plasmonic nanostructures from linear to circular, we observe reversible increases of reflectance by 78% as well as simultaneous increases of optical field concentration by 35.7% under 10^9 W/m^2 continuous wave (CW) optical excitation. These signatures of decreased plasmon damping were also monitored in the presence of an externally applied magnetic field (0.2 T). The combined interactions allow an estimate of the light-induced magnetization, which corresponds to an effective magnetic field of ~1.3 T during circularly polarized CW excitation (10^9 W/m^2). We rationalize the observed decreases in plasmon damping in terms of the Lorentz forces acting on the circulating electron trajectories. Our results outline strategies for actively modulating intrinsic losses in the metal, and thereby, the optical mode quality and field concentration via opto-magnetic effects encoded in the polarization state of incident light.
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Submitted 19 January, 2022;
originally announced January 2022.
The Connection Between Plasmon Decay Dynamics and the SERS background: Inelastic Scattering from Non-Thermal and Hot Carriers
Authors:
Shengxiang Wu,
Oscar Hsu-Cheng Cheng,
Boqin Zhao,
Nicki Hogan,
Annika Lee,
Dong Hee Son,
Matthew Sheldon
Abstract:
Recent studies have established that the anti-Stokes Raman signal from plasmonic metal nanostructures can be used to determine the two separate temperatures that characterize carriers inside the metal -- the temperature of photoexcited "hot carriers" and carriers that are thermalized with the metal lattice. However, the related signal in the Stokes spectral region has historically impeded surface…
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Recent studies have established that the anti-Stokes Raman signal from plasmonic metal nanostructures can be used to determine the two separate temperatures that characterize carriers inside the metal -- the temperature of photoexcited "hot carriers" and carriers that are thermalized with the metal lattice. However, the related signal in the Stokes spectral region has historically impeded surface enhanced Raman spectroscopy (SERS), as the vibrational peaks of adsorbed molecules are always accompanied by the broad background of the metal substrate. The fundamental source of the metal signal, and hence its contribution to the spectrum, has been unclear. Here, we outline a unified theoretical model that describes both the temperature-dependent behavior and the broad spectral distribution. We suggest that the majority of the Raman signal is from inelastic scattering directly with non-thermal carriers that have been excited via damping of the surface plasmon. In addition, a significant spectral component (~ 1%) is due to a sub-population of hot carriers in an elevated thermal distribution. We have performed temperature and power-dependent Raman experiments to show how a simple fitting procedure reveals the plasmon dephasing time, as well as the temperatures of the hot carriers and the metal lattice, in order to correlate these parameters with quantitative Raman analysis of chemical species adsorbed on metal surface.
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Submitted 24 March, 2021; v1 submitted 14 October, 2020;
originally announced October 2020.
