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Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS$_2$/WSe$_2$ heterobilayer
Authors:
Suman Chatterjee,
Medha Dandu,
Pushkar Dasika,
Rabindra Biswas,
Sarthak Das,
Kenji Watanabe,
Takashi Taniguchi,
Varun Raghunathan,
Kausik Majumdar
Abstract:
Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moiré potential in a WS$_2$/WSe$_2$ heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturb…
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Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moiré potential in a WS$_2$/WSe$_2$ heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturbing field with odd parity around the high-symmetry points. This allows us to simultaneously observe the first (linear) and second (parabolic) order Stark shift for the ground state and first excited state, respectively, of the moiré trapped exciton - an effect opposite to conventional quantum-confined Stark shift. Depending on the degree of confinement, these excitons exhibit up to twenty-fold gate-tunability in the lifetime ($100$ to $5$ ns). Also, exciton localization dependent dipolar repulsion leads to an optical power-induced blueshift of $\sim$1 meV/$μ$W - a five-fold enhancement over previous reports.
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Submitted 24 July, 2023;
originally announced July 2023.
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Electrically Tunable Localized versus Delocalized Intralayer Moiré Excitons and Trions in a Twisted MoS$_2$ Bilayer
Authors:
Medha Dandu,
Garima Gupta,
Pushkar Dasika,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Moiré superlattice-induced sub-bands in twisted van der Waals homo- and hetero-structures govern their optical and electrical properties, rendering additional degrees of freedom such as twist angle. Here, we demonstrate the moiré superlattice effects on the intralayer excitons and trions in a twisted bilayer of MoS$_2$ of H-type stacking at marginal twist angles. We identify the emission from loca…
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Moiré superlattice-induced sub-bands in twisted van der Waals homo- and hetero-structures govern their optical and electrical properties, rendering additional degrees of freedom such as twist angle. Here, we demonstrate the moiré superlattice effects on the intralayer excitons and trions in a twisted bilayer of MoS$_2$ of H-type stacking at marginal twist angles. We identify the emission from localized and multiple delocalized sub-bands of intralayer moiré excitons and show their electrical modulation by the corresponding trion formation. The electrical control of the oscillator strength of the moiré excitons also results in a strong tunability of resonant Raman scattering. We find that the gate-induced doping significantly modulates the electronic moiré potential, however leaves the excitonic moiré confinement unaltered. This effect, coupled with variable moiré trap filling by tuning the optical excitation density, allows us to delineate the different phases of localized and delocalized moiré trions. We demonstrate that the moiré excitons exhibit strong valley coherence that changes in a striking non-monotonic W-shape with gating due to motional narrowing. These observations from the simultaneous electrostatic control of quasiparticle-dependent moiré potential will lead to exciting effects of tunable many-body phenomena in moiré superlattices.
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Submitted 11 March, 2022;
originally announced March 2022.
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Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts
Authors:
Krishna Murali,
Medha Dandu,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Due to Fermi level pinning (FLP), metal-semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to efficiently inject both electrons and holes using the same metal - an essential requirement for several applications, including light-emitting devices and complementary logic. Interestingly, modulating the SBH in the Sc…
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Due to Fermi level pinning (FLP), metal-semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to efficiently inject both electrons and holes using the same metal - an essential requirement for several applications, including light-emitting devices and complementary logic. Interestingly, modulating the SBH in the Schottky-Mott limit of de-pinned van der Waals (vdW) contacts becomes possible. However, accurate extraction of the SBH is essential to exploit such contacts to their full potential. In this work, we propose a simple technique to accurately estimate the SBH at the vdW contact interfaces by circumventing several ambiguities associated with SBH extraction. Using this technique on several vdW contacts, including metallic 2H-TaSe$_2$, semi-metallic graphene, and degenerately doped semiconducting SnSe$_2$, we demonstrate that vdW contacts exhibit a universal de-pinned nature. Superior ambipolar carrier injection properties of vdW contacts are demonstrated (with Au contact as a reference) in two applications, namely, (a) pulsed electroluminescence from monolayer WS$_2$ using few-layer graphene (FLG) contact, and (b) efficient carrier injection to WS$_2$ and WSe$_2$ channels in both nFET and pFET modes using 2H-TaSe$_2$ contact.
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Submitted 12 February, 2021;
originally announced February 2021.
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Highly tunable layered exciton in bilayer WS$_2$: linear quantum confined Stark effect versus electrostatic doping
Authors:
Sarthak Das,
Medha Dandu,
Garima Gupta,
Krishna Murali,
Nithin Abraham,
Sangeeth Kallatt,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied o…
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In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied out-of-plane electric field, in contrary to a quadratic one for a monolayer. The interplay between the unique layer degree of freedom in the bilayer and the field driven partial inter-conversion between intra-layer and inter-layer excitons generates a giant tunability of the exciton oscillator strength. This makes bilayer WS$_2$ a promising candidate for an atomically thin, tunable electro-absorption modulator at the exciton resonance, particularly when stacked on top of a graphene layer that provides an ultra-fast non-radiative relaxation channel. By tweaking the biasing configuration, we further show that the excitonic response can be largely tuned through electrostatic doping, by efficiently transferring the oscillator strength from neutral to charged exciton. The findings are prospective towards highly tunable, atomically thin, compact and light, on chip, reconfigurable components for next generation optoelectronics.
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Submitted 13 November, 2020;
originally announced November 2020.
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Gate tunable WSe2/SnSe2 backward diode with ultrahigh reverse rectification ratio
Authors:
Krishna Murali,
Medha Dandu,
Sarthak Das,
Kausik Majumdar
Abstract:
Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here we demonstrate a van der Waals material based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical h…
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Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here we demonstrate a van der Waals material based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical heterojunction. The diode exhibits an ultra-high reverse rectification ratio (R) of ~2.1x10^4 and the same is maintained up to an unusually large bias of 1.5 V - outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude, while maintaining an impressive curvature coefficient (γ) of ~37 per V. The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.
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Submitted 2 February, 2018;
originally announced February 2018.
