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Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling
Authors:
Qiangbing Guo,
Xiao-Zhuo Qi,
Meng Gao,
Sanlue Hu,
Lishu Zhang,
Wenju Zhou,
Wenjie Zang,
Xiaoxu Zhao,
Junyong Wang,
Bingmin Yan,
Mingquan Xu,
Yun-Kun Wu,
Goki Eda,
Zewen Xiao,
Huiyang Gou,
Yuan Ping Feng,
Guang-Can Guo,
Wu Zhou,
Xi-Feng Ren,
Cheng-Wei Qiu,
Stephen J. Pennycook,
Andrew T. S. Wee
Abstract:
Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayer…
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Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayers are stacked into van der Waals structures. Here we report a novel van der Waals crystal, niobium oxide dichloride, featuring a vanishing interlayer electronic coupling and scalable second harmonic generation intensity of up to three orders higher than that of exciton-resonant monolayer WS2. Importantly, the strong second-order nonlinearity enables correlated parametric photon pair generation, via a spontaneous parametric down-conversion (SPDC) process, in flakes as thin as ~46 nm. To our knowledge, this is the first SPDC source unambiguously demonstrated in 2D layered materials, and the thinnest SPDC source ever reported. Our work opens an avenue towards developing van der Waals material-based ultracompact on-chip SPDC sources, and high-performance photon modulators in both classical and quantum optical technologies.
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Submitted 8 February, 2022;
originally announced February 2022.
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High-throughput Discovery and Intelligent Design of 2D Functional Materials for Various Applications
Authors:
Lei Shen,
Jun Zhou,
Tong Yang,
Ming Yang,
Yuan Ping Feng
Abstract:
Novel technologies and new materials are in high demand for future energy-efficient electronic devices to overcome the fundamental limitations of miniaturization of current silicon-based devices. Two-dimensional (2D) materials show promising applications in the next generation devices because they can be tailored on the specific property that a technology is based on, and be compatible with other…
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Novel technologies and new materials are in high demand for future energy-efficient electronic devices to overcome the fundamental limitations of miniaturization of current silicon-based devices. Two-dimensional (2D) materials show promising applications in the next generation devices because they can be tailored on the specific property that a technology is based on, and be compatible with other technologies, such as the silicon-based (opto)electronics. Although the number of experimentally discovered 2D materials is growing, the speed is very slow and only a few dozen 2D materials have been synthesized or exfoliated since the discovery of graphene. Recently, a novel computational technique, dubbed "high-throughput computational materials design", becomes a burgeoning area of materials science, which is the combination of the quantum-mechanical theory, materials genome, and database construction with intelligent data mining. This new and powerful tool can greatly accelerate the discovery, design and application of 2D materials by creating database containing a large amount of 2D materials with calculated fundamental properties, and then intelligently mining (via high-throughput automation or machine learning) the database in the search of 2D materials with the desired properties for particular applications, such as energy conversion, electronics, spintronics, and optoelectronics.
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Submitted 17 December, 2021;
originally announced December 2021.
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Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization
Authors:
Ganesh Ji Omar,
Weilong Kong,
Hariom Jani,
Mengsha Li,
Jun Zhou,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Sonu Hooda,
Thirumalai Venkatesan,
Yuan Ping Feng,
Stephen J. Pennycook,
Shen Lei,
A. Ariando
Abstract:
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th…
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We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics.
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Submitted 5 November, 2022; v1 submitted 13 October, 2021;
originally announced October 2021.
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Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe$_2$
Authors:
Lei Zhang,
Tong Yang,
Muhammad Fauzi Sahdan,
Arramel,
Wenshuo Xu,
Kaijian Xing,
Yuan Ping Feng,
Wenjing Zhang,
Zhuo Wang,
Andrew T. S. Wee
Abstract:
Two-dimensional (2D) platinum diselenide (PtSe$_2$) has received significant attention for 2D transistor applications due to its high mobility. Here, using molecular beam epitaxy, we investigate the growth of 2D PtSe$_2$ on highly oriented pyrolytic graphite (HOPG) and unveil their electronic properties via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectro…
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Two-dimensional (2D) platinum diselenide (PtSe$_2$) has received significant attention for 2D transistor applications due to its high mobility. Here, using molecular beam epitaxy, we investigate the growth of 2D PtSe$_2$ on highly oriented pyrolytic graphite (HOPG) and unveil their electronic properties via X-ray photoelectron spectroscopy, Raman spectra, and scanning tunnelling microscopy/spectroscopy as well as density functional theory (DFT) calculations. PtSe$_2$ adopts a layer-by-layer growth mode on HOPG and shows a decreasing band gap with increasing layer number. For the layer numbers from one to four, PtSe$_2$ has band gaps of $2.0 \pm 0.1$, $1.1 \pm 0.1$, $0.6 \pm 0.1$ and $0.20 \pm 0.1$ eV, respectively, and becomes semimetal from the fifth layer. DFT calculations reproduce the layer-dependent evolution of both the band gap and band edges, suggest an indirect band-gap structure, and elucidate the underlying physics at the atomic level.
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Submitted 7 May, 2021;
originally announced May 2021.
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Phase diagram and superlattice structures of monolayer phosphorus carbide (P$_x$C$_{1-x}$)
Authors:
Xiaoyang Ma,
Jun Zhou,
Tong Yang,
Dechun Li,
Yuan Ping Feng
Abstract:
Phase stability and properties of two-dimensional phosphorus carbide, P$_x$C$_{1-x}$, are investigated using the first-principles method in combination with cluster expansion and Monte Carlo simulation. Monolayer P$_x$C$_{1-x}$ is found to be a phase separating system which indicates difficulty in fabricating monolayer P$_x$C$_{1-x}$ or crystalline P$_x$C$_{1-x}$ thin films. Nevertheless, a bottom…
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Phase stability and properties of two-dimensional phosphorus carbide, P$_x$C$_{1-x}$, are investigated using the first-principles method in combination with cluster expansion and Monte Carlo simulation. Monolayer P$_x$C$_{1-x}$ is found to be a phase separating system which indicates difficulty in fabricating monolayer P$_x$C$_{1-x}$ or crystalline P$_x$C$_{1-x}$ thin films. Nevertheless, a bottom-up design approach is used to determine the stable structures of P$_x$C$_{1-x}$ of various compositions which turn out to be superlattices consisting of alternating carbon and phosphorus nanoribbons along the armchair direction. Results of first-principles calculations indicate that once these structures are produced, they are mechanically and thermodynamically stable. All the ordered structures are predicted to be semiconductors, with band gap ranging from 0.2 to 1.2 eV. In addition, the monolayer P$_x$C$_{1-x}$ are predicted to have high carrier mobility, and high optical absorption in the ultraviolet region which shows a red-shift as the P:C ratio increases. These properties make 2D P$_x$C$_{1-x}$ promising materials for applications in electronics and optoelectronics.
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Submitted 28 February, 2021; v1 submitted 16 October, 2020;
originally announced October 2020.
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Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator
Authors:
W. X. Zhou,
H. J. Wu,
J. Zhou,
S. W. Zeng,
C. J. Li,
M. S. Li,
R. Guo,
J. X. Xiao,
Z. Huang,
W. M. Lv,
K. Han,
P. Yang,
C. G. Li,
Z. S. Lim,
H. Wang,
Y. Zhang,
S. J. Chua,
K. Y. Zeng,
T. Venkatesan,
J. S. Chen,
Y. P. Feng,
S. J. Pennycook,
A. Ariando
Abstract:
Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T…
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Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.
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Submitted 11 July, 2020;
originally announced July 2020.
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Intrinsic Ferromagnetism in Electrenes
Authors:
Jun Zhou,
Yuan Ping Feng,
Lei Shen
Abstract:
We report intrinsic ferromagnetism in monolayer electrides or electrenes, in which excess electrons act as anions. Our first-principles calculations demonstrate that magnetism in such electron-rich two-dimensional (2D) materials originates from the anionic electrons rather than partially filled d orbitals, which is fundamentally different from ferromagnetism found in other 2D intrinsic magnetic ma…
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We report intrinsic ferromagnetism in monolayer electrides or electrenes, in which excess electrons act as anions. Our first-principles calculations demonstrate that magnetism in such electron-rich two-dimensional (2D) materials originates from the anionic electrons rather than partially filled d orbitals, which is fundamentally different from ferromagnetism found in other 2D intrinsic magnetic materials. Taking the honeycomb LaBr$_2$ (La$^{3+}$Br$^{-}_{2}\cdot e^{-}$) as an example, our calculations reveal that the excess electron is localized at the center of the hexagon, which leads to strong Stoner-instability of the associated states at the Fermi energy, resulting in spontaneous magnetization and formation of a local moment. The overlap of extended tails of the wave functions of these electrons mediates a long-range ferromagnetic interaction, contributing to a Curie temperature ($T_\textrm{c}$) of 235 K and a coercive field ($H_\textrm{c}$) of 0.53 T, which can be further enhanced by hole doping. The dual nature, localization and extension, of the electronic states suggests a unique mechanism in such magnetic-element-free electrenes as intrinsic 2D ferromagnets.
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Submitted 9 April, 2019;
originally announced April 2019.
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Review of borophene and its potential applications
Authors:
Zhi-Qiang Wang,
Tie-Yu Lü,
Hui-Qiong Wang,
Yuan Ping Feng,
Jin-Cheng Zheng
Abstract:
Since two-dimensional boron sheet (borophene) synthesized on Ag substrates in 2015, research on borophene has grown fast in the fields of condensed matter physics, chemistry, material science, and nanotechnology. Due to the unique physical and chemical properties, borophene has various potential applications. In this review, we summarize the progress on borophene with a particular emphasis on the…
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Since two-dimensional boron sheet (borophene) synthesized on Ag substrates in 2015, research on borophene has grown fast in the fields of condensed matter physics, chemistry, material science, and nanotechnology. Due to the unique physical and chemical properties, borophene has various potential applications. In this review, we summarize the progress on borophene with a particular emphasis on the recent advances. First, we introduce the phases of borophene by experimental synthesis and theoretical predictions. Then, the physical and chemical properties, such as mechanical, thermal, electronic, optical and superconducting properties are summarized. We also discuss in detail the utilization of the borophene for wide ranges of potential application among the alkali metal ion batteries, Li-S batteries, hydrogen storage, supercapacitor, sensor and catalytic in hydrogen evolution, oxygen reduction, oxygen evolution, and CO2 electroreduction reaction. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.
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Submitted 2 April, 2019; v1 submitted 27 March, 2019;
originally announced March 2019.
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New crystal structure prediction of fully hydrogenated borophene by first principles calculations
Authors:
Zhi-Qiang Wang,
Tie-Yu Lü,
Hui-Qiong Wang,
Yuan Ping Feng,
Jin-Cheng Zheng
Abstract:
New crystal structures of fully hydrogenated borophene (borophane) have been predicted by first principles calculation. Comparing with the chair-like borophane (C-boropane) that has been reported in literature, we obtained four new borophane conformers with much lower total-energy. The most stable one, washboard-like borophane (W-borophane), has energy about 113.41 meV/atom lower than C-borophane.…
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New crystal structures of fully hydrogenated borophene (borophane) have been predicted by first principles calculation. Comparing with the chair-like borophane (C-boropane) that has been reported in literature, we obtained four new borophane conformers with much lower total-energy. The most stable one, washboard-like borophane (W-borophane), has energy about 113.41 meV/atom lower than C-borophane. In order to explain the relative stability of different borophane conformers, the atom configuration, density of states, charge transfer, charge density distribution and defect formation energy of B-H dimer have been calculated. The results show that the charge transfer from B atoms to H atoms is crucial for the stability of borophane. In different borophane conformers, the bonding characteristics between B and H atoms are similar, but the B-B bonds in W-borophane are much stronger than that in C-borophane or other structures. In addition, we examined the dynamical stability of borophane conformers by phonon dispersions and found that the four new conformers are all dynamically stable. Finally the mechanical properties of borophane conformers along an arbitrary direction have been discussed. W-borophane possesses unique electronic structure (Dirac cone), good stability and superior mechanical properties. W-borophane has broad perspective for nano electronic device.
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Submitted 23 May, 2017; v1 submitted 26 October, 2016;
originally announced October 2016.
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Electron Transport Properties of Atomic Carbon Nanowires between Graphene Electrodes
Authors:
L. Shen,
M. G. Zeng,
S. W. Yang,
C. Zhang,
X. F. Wang,
Y. P. Feng
Abstract:
Long, stable and free-standing linear atomic carbon wires have been carved out from graphene recently [Meyer et al: Nature (London) 2008, 454, 319; Jin et al: Phys: Rev: Lett: 2009, 102, 205501]. They can be considered as the extremely narrow graphene nanoribbons or extremely thin carbon nanotubes. It might even be possible to make use of high strength and identical (without charity) carbon wire…
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Long, stable and free-standing linear atomic carbon wires have been carved out from graphene recently [Meyer et al: Nature (London) 2008, 454, 319; Jin et al: Phys: Rev: Lett: 2009, 102, 205501]. They can be considered as the extremely narrow graphene nanoribbons or extremely thin carbon nanotubes. It might even be possible to make use of high strength and identical (without charity) carbon wires as a transport channel or on-chip interconnects for field-effect transistors. Here we investigate electron transport properties of linear atomic carbon wire-graphene junctions by nonequilibruim Green's function combined with density functional theory. For short wires, linear ballistic transport is observed in odd-numbered wire but destroyed by Peirerls distortion in even-numbered wire. For wires longer than 2.1 nm as fabricated above, however, the ballistic conductance of carbon wire-graphene junctions is remarkably robust against the Peierls distortion, structural imperfections, and hydrogen impurity adsorption of the linear carbon wires except oxygen impurities. As such, the epoxy groups might be the origin of low conductance experimentally observed in carbon wires. Moreover, double atomic carbon wires exhibit negative differential resistance (NDR) effect.
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Submitted 31 October, 2009; v1 submitted 21 October, 2009;
originally announced October 2009.
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Activating Mg acceptors in AlN by oxygen: first principles calculations
Authors:
R. Q. Wu,
Y. P. Feng
Abstract:
First principles calculations based on density functional theory (DFT) are performed to study the electronic properties of Mg acceptors in AlN at the presence of oxygen. It is found that Mg and O tend to form complexes like Mg-O, Mg$_2$-O, Mg$_3$-O and Mg$_4$-O which have activation energies about 0.23 eV lower than that of Mg (except of the passive Mg-O). The lower activation energies originate…
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First principles calculations based on density functional theory (DFT) are performed to study the electronic properties of Mg acceptors in AlN at the presence of oxygen. It is found that Mg and O tend to form complexes like Mg-O, Mg$_2$-O, Mg$_3$-O and Mg$_4$-O which have activation energies about 0.23 eV lower than that of Mg (except of the passive Mg-O). The lower activation energies originate from the extra states over valence band top of AlN induced by the passive Mg-O. By comparing to the well-established case of GaN, it is possible to fabricate Mg and O codoped AlN without MgO precipitate. These results suggest the possibility of achieving higher hole concentration in AlN by Mg and O codoping.
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Submitted 16 September, 2007;
originally announced September 2007.
