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Development and Implementation of Advanced Beam Diagnostic and Abort Systems in SuperKEKB
Authors:
Keisuke Yoshihara,
Tetsuro Abe,
Michele Aversano,
Alexander Gale,
Hitomi Ikeda,
Hiroshi Kaji,
Hidekazu Kakuno,
Taichiro Koga,
Toru Iijima,
Shinnosuke Kato,
Ami Kusudo,
Yuxin Liu,
Akane Maeda,
Sayan Mitra,
Gaku Mitsuka,
Kenkichi Miyabayashi,
Isamu Nakamura,
Hiroyuki Nakayama,
Yu Nakazawa,
Riku Nomaru,
Iori Okada,
Xiao-Dong Shi,
Shuji Tanaka,
Kenta Uno,
Yutaka Ushiroda
, et al. (2 additional authors not shown)
Abstract:
The SuperKEKB/Belle II experiment aims to collect high-statistics data of B meson pairs to explore new physics beyond the Standard Model (SM). SuperKEKB, an upgraded version of the KEKB accelerator, has achieved a world-record luminosity of $4.71 \times 10^{34} \, \mathrm{cm^{-2}s^{-1}}$ in 2022 but continues to strive for higher luminosities. One of the major obstacles is Sudden Beam Loss (SBL) e…
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The SuperKEKB/Belle II experiment aims to collect high-statistics data of B meson pairs to explore new physics beyond the Standard Model (SM). SuperKEKB, an upgraded version of the KEKB accelerator, has achieved a world-record luminosity of $4.71 \times 10^{34} \, \mathrm{cm^{-2}s^{-1}}$ in 2022 but continues to strive for higher luminosities. One of the major obstacles is Sudden Beam Loss (SBL) events, which cause substantial beam losses and damage to the Belle~II detector. To find a hint for addressing SBL challenges, advanced beam diagnostic systems and enhanced beam abort systems have been developed. The diagnostic system aims to accurately pinpoint the start of beam losses, while the upgraded abort system quickly disposes of anomalous beams to minimize damage.
This paper details the development and implementation of these systems, including high-speed loss monitors, time synchronization with the White Rabbit system, and data acquisition systems. Efforts to understand the mechanisms of SBL events, using acoustic sensors to detect discharges, are also discussed. These measures aim to improve the operational stability and luminosity of SuperKEKB, contributing to the experiment's success.
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Submitted 28 August, 2024;
originally announced August 2024.
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Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride
Authors:
Sergei Nedić,
Karin Yamamura,
Angus Gale,
Igor Aharonovich,
Milos Toth
Abstract:
Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on-chip quantum photonics. The B-centre defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to th…
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Hexagonal boron nitride (hBN) holds promise as a solid state, van der Waals host of single photon emitters for on-chip quantum photonics. The B-centre defect emitting at 436 nm is particularly compelling as it can be generated by electron beam irradiation. However, the emitter generation mechanism is unknown, the robustness of the method is variable, and it has only been applied successfully to thick flakes of hBN (>> 10 nm). Here, we use in-situ time-resolved cathodoluminescence (CL) spectroscopy to investigate the kinetics of B-centre generation. We show that the generation of B-centres is accompanied by quenching of a carbon-related emission at ~305 nm and that both processes are rate-limited by electromigration of defects in the hBN lattice. We identify problems that limit the efficacy and reproducibility of the emitter generation method, and solve them using a combination of optimized electron beam parameters and hBN pre- and post-processing treatments. We achieve B-centre quantum emitters in hBN flakes as thin as 8 nm, elucidate the mechanisms responsible for electron beam restructuring of quantum emitters in hBN, and gain insights towards identification of the atomic structure of the B-centre quantum emitter.
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Submitted 14 April, 2024;
originally announced April 2024.
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On-Demand Quantum Light Sources for Underwater Communications
Authors:
Dominic Scognamiglio,
Angus Gale,
Ali Al-Juboori,
Milos Toth,
Igor Aharonovich
Abstract:
Quantum communication has been at the forefront of modern research for decades, however it is severely hampered in underwater applications, where the properties of water absorb nearly all useful optical wavelengths and prevent them from propagating more than, in most cases, a few metres. This research reports on-demand quantum light sources, suitable for underwater optical communication. The singl…
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Quantum communication has been at the forefront of modern research for decades, however it is severely hampered in underwater applications, where the properties of water absorb nearly all useful optical wavelengths and prevent them from propagating more than, in most cases, a few metres. This research reports on-demand quantum light sources, suitable for underwater optical communication. The single photon emitters, which can be engineered using an electron beam, are based on impurities in hexagonal boron nitride. They have a zero phonon line at ~ 436 nm, near the minimum value of water absorption and are shown to suffer negligible transmission and purity loss when travelling through water channels. These emitters are also shown to possess exceptional underwater transmission properties compared to emitters at other optical wavelengths and are utilised in a proof of principle underwater communication link with rates of several kbits/s.
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Submitted 23 April, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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Optically addressable spin defects coupled to bound states in the continuum metasurfaces
Authors:
Luca Sortino,
Angus Gale,
Lucca Kühner,
Chi Li,
Jonas Biechteler,
Fedja J. Wendisch,
Mehran Kianinia,
Haoran Ren,
Milos Toth,
Stefan A. Maier,
Igor Aharonovich,
Andreas Tittl
Abstract:
Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologie…
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Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances leveraging quasi-bound states in the continuum (qBICs). Coupling between spin defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth facilitated by Q factors exceeding $10^2$. Our findings demonstrate a new class of spin based metasurfaces and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission.
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Submitted 6 March, 2024; v1 submitted 9 June, 2023;
originally announced June 2023.
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Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride
Authors:
Angus Gale,
Dominic Scognamiglio,
Ivan Zhigulin,
Benjamin Whitefield,
Mehran Kianinia,
Igor Aharonovich,
Milos Toth
Abstract:
Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we…
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Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate charge state switching of $\small{V_B}$ defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states ($\small{V_B^- \rightleftharpoons V_B^0 + e^-}$), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the $\small{V_B}$ charge state, and to stabilize the -1 state which is a prerequisite for optical spin manipulation and readout of the defect.
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Submitted 9 May, 2023;
originally announced May 2023.
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Coupling spin defects in hexagonal boron nitride to a microwave cavity
Authors:
Thinh N. Tran,
Angus Gale,
Benjamin Whitefield,
Milos Toth,
Igor Aharonovich,
Mehran Kianinia
Abstract:
Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects are limited by their interactions with the spin environment in hBN, inefficient microwave delivery can further reduce their sensitivity. Hare, we design and fabricate a microwave double arc resonator for efficient transferring of the microwave…
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Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects are limited by their interactions with the spin environment in hBN, inefficient microwave delivery can further reduce their sensitivity. Hare, we design and fabricate a microwave double arc resonator for efficient transferring of the microwave field at 3.8 GHz. The spin transitions in the ground state of VB- are coupled to the frequency of the microwave cavity which results in enhanced optically detected magnetic resonance (ODMR) contrast. In addition, the linewidth of the ODMR signal further reduces, achieving a magnetic field sensitivity as low as 42.4 microtesla per square root of hertz. Our robust and scalable device engineering is promising for future employment of spin defects in hBN for quantum sensing.
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Submitted 17 January, 2023;
originally announced January 2023.
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Photophysics of blue quantum emitters in hexagonal Boron Nitride
Authors:
Ivan Zhigulin,
Karin Yamamura,
Viktor Ivády,
Angus Gale,
Jake Horder,
Charlene J. Lobo,
Mehran Kianinia,
Milos Toth,
Igor Aharonovich
Abstract:
Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statisti…
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Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.
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Submitted 10 January, 2023;
originally announced January 2023.
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Stark effect of quantum blue emitters in hBN
Authors:
Ivan Zhigulin,
Jake Horder,
Victor Ivady,
Simon J. U. White,
Angus Gale,
Chi Li,
Charlene J. Lobo,
Milos Toth,
Igor Aharonovich,
Mehran Kianinia
Abstract:
Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quad…
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Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quadratic stark effect. Using these results, we employed DFT calculations to identify possible point defects with small transition dipole moments, which may be the source of blue emitters in hBN.
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Submitted 1 August, 2022;
originally announced August 2022.
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Deterministic fabrication of blue quantum emitters in hexagonal boron nitride
Authors:
Angus Gale,
Chi Li,
Yongliang Chen,
Kenji Watanabe,
Takashi Taniguchi,
Igor Aharonovich,
Milos Toth
Abstract:
Hexagonal boron nitride (hBN) is gaining considerable attention as a solid-state host of quantum emitters from the ultraviolet to the near infrared spectral ranges. However, atomic structures of most of the emitters are speculative or unknown, and emitter fabrication methods typically suffer from poor reproducibility, spatial accuracy, or spectral specificity. Here, we present a robust, determinis…
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Hexagonal boron nitride (hBN) is gaining considerable attention as a solid-state host of quantum emitters from the ultraviolet to the near infrared spectral ranges. However, atomic structures of most of the emitters are speculative or unknown, and emitter fabrication methods typically suffer from poor reproducibility, spatial accuracy, or spectral specificity. Here, we present a robust, deterministic electron beam technique for site-specific fabrication of blue quantum emitters with a zero-phonon line at 436 nm (2.8 eV). We show that the emission intensity is proportional to electron dose and that the efficacy of the fabrication method correlates with a defect emission at 305 nm (4.1 eV). We attribute blue emitter generation to fragmentation of carbon clusters by electron impact and show that the robustness and universality of the emitter fabrication technique are enhanced by a pre-irradiation annealing treatment. Our results provide important insights into photophysical properties and structure of defects in hBN and a framework for deterministic fabrication of quantum emitters in hBN.
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Submitted 26 November, 2021;
originally announced November 2021.
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Recoil Implantation Using Gas-Phase Precursor Molecules
Authors:
Angus Gale,
Johannes E. Fröch,
Mehran Kianinia,
James Bishop,
Igor Aharonovich,
Milos Toth
Abstract:
Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, parti…
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Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat Commun 11, 5039 (2020)]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation to most of the periodic table, and to applications in which thin film deposition or removal is impractical.
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Submitted 9 February, 2021;
originally announced February 2021.