Showing 1–22 of 22 results for author: Hansen, O

Increasing the Collection Efficiency in Selenium Thin-Film Solar Cells Using a Closed-Space Annealing Strategy

Authors: Rasmus Nielsen, Markus Schleuning, Orestis Karalis, Tobias H. Hemmingsen, Ole Hansen, Ib Chorkendorff, Thomas Unold, Peter C. K. Vesborg

Abstract: Elemental selenium is a promising wide-bandgap ($E_\mathrm{G}\approx$ 1.95 eV) photovoltaic material for the next generation of thin-film solar cells. To realize high-efficiency selenium solar cells, it is crucial to optimize the crystallization process of the selenium thin-film photoabsorber. However, the high vapor pressure of selenium restricts the processing conditions to a compromise between… ▽ More Elemental selenium is a promising wide-bandgap ($E_\mathrm{G}\approx$ 1.95 eV) photovoltaic material for the next generation of thin-film solar cells. To realize high-efficiency selenium solar cells, it is crucial to optimize the crystallization process of the selenium thin-film photoabsorber. However, the high vapor pressure of selenium restricts the processing conditions to a compromise between the growth of large crystal grains and the formation of pinholes. In this study, we introduce a closed-space annealing (CSA) strategy designed to suppress the sublimation of selenium, enabling thermal annealing processes at higher temperatures and for longer periods of time. As a result, we consistently improve carrier collection and the overall photovoltaic device performance in our selenium solar cells. By characterizing the carrier dynamics in our devices, we conclude that the observed improvements result from a reduction in charge transfer resistance rather than an increase in carrier diffusion length. The CSA strategy is a promising method for controlling surface morphology and roughness without reducing crystal grain sizes, which paves the way for further advancements in the efficiency and reproducibility of selenium thin-film solar cells. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Monolithic Selenium/Silicon Tandem Solar Cells

Authors: Rasmus Nielsen, Andrea Crovetto, Alireza Assar, Ole Hansen, Ib Chorkendorff, Peter C. K. Vesborg

Abstract: Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single junction devices, such a device has never been demonstrated. In this study, we present the first monolithically integrated selenium/silicon tandem solar cell. Guide… ▽ More Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single junction devices, such a device has never been demonstrated. In this study, we present the first monolithically integrated selenium/silicon tandem solar cell. Guided by device simulations, we investigate various carrier-selective contact materials and achieve encouraging results, including an open-circuit voltage of V$_\text{oc}$=1.68 V from suns-V$_\text{oc}$ measurements. The high open-circuit voltage positions selenium/silicon tandem solar cells as serious contenders to the industrially dominant single junction technologies. Furthermore, we quantify a pseudo fill factor of more than 80% using injection-level-dependent open-circuit voltage measurements, indicating that a significant fraction of the photovoltaic losses can be attributed to parasitic series resistance. This work provides valuable insights into the key challenges that need to be addressed for realizing higher efficiency selenium/silicon tandem solar cells. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Laser-Annealing and Solid-Phase Epitaxy of Selenium Thin-Film Solar Cells

Authors: Rasmus Nielsen, Tobias H. Hemmingsen, Tobias G. Bonczyk, Ole Hansen, Ib Chorkendorff, Peter C. K. Vesborg

Abstract: Selenium has resurged as a promising photovoltaic material in solar cell research due to its wide direct bandgap of 1.95 eV, making it a suitable candidate for a top cell in tandem photovoltaic devices. However, the optoelectronic quality of selenium thin-films has been identified as a key bottleneck for realizing high-efficiency selenium solar cells. In this study, we present a novel approach for… ▽ More Selenium has resurged as a promising photovoltaic material in solar cell research due to its wide direct bandgap of 1.95 eV, making it a suitable candidate for a top cell in tandem photovoltaic devices. However, the optoelectronic quality of selenium thin-films has been identified as a key bottleneck for realizing high-efficiency selenium solar cells. In this study, we present a novel approach for crystallizing selenium thin-films using laser-annealing as an alternative to the conventionally used thermal annealing strategy. By laser-annealing through a semitransparent substrate, a buried layer of high-quality selenium crystallites is formed and used as a growth template for solid-phase epitaxy. The resulting selenium thin-films feature larger and more preferentially oriented grains with a negligible surface roughness in comparison to thermally annealed selenium thin-films. We fabricate photovoltaic devices using this strategy, and demonstrate a record ideality factor of n=1.37, a record fill factor of FF=63.7%, and a power conversion efficiency of PCE=5.0%. The presented laser-annealing strategy is universally applicable and is a promising approach for crystallizing a wide range of photovoltaic materials where high temperatures are needed while maintaining a low substrate temperature. △ Less

Submitted 13 July, 2023; v1 submitted 20 June, 2023; originally announced June 2023.

The Solenoidal Large Intensity Device (SoLID) for JLab 12 GeV

Authors: John Arrington, Jay Benesch, Alexandre Camsonne, Jimmy Caylor, Jian-Ping Chen, Silviu Covrig Dusa, Alexander Emmert, George Evans, Haiyan Gao, J. Ole Hansen, Garth M. Huber, Sylvester Joosten, Vladimir Khachatryan, Nilanga Liyanage, Zein-Eddine Meziani, Michael Nycz, Chao Peng, Michael Paolone, Whit Seay, Paul A. Souder, Nikos Sparveris, Hubert Spiesberger, Ye Tian, Eric Voutier, Junqi Xie , et al. (6 additional authors not shown)

Abstract: The Solenoidal Large Intensity Device (SoLID) is a new experimental apparatus planned for Hall A at the Thomas Jefferson National Accelerator Facility (JLab). SoLID will combine large angular and momentum acceptance with the capability to handle very high data rates at high luminosity. With a slate of approved high-impact physics experiments, SoLID will push JLab to a new limit at the QCD intensit… ▽ More The Solenoidal Large Intensity Device (SoLID) is a new experimental apparatus planned for Hall A at the Thomas Jefferson National Accelerator Facility (JLab). SoLID will combine large angular and momentum acceptance with the capability to handle very high data rates at high luminosity. With a slate of approved high-impact physics experiments, SoLID will push JLab to a new limit at the QCD intensity frontier that will exploit the full potential of its 12 GeV electron beam. In this paper, we present an overview of the rich physics program that can be realized with SoLID, which encompasses the tomography of the nucleon in 3-D momentum space from Semi-Inclusive Deep Inelastic Scattering (SIDIS), expanding the phase space in the search for new physics and novel hadronic effects in parity-violating DIS (PVDIS), a precision measurement of $J/ψ$ production at threshold that probes the gluon field and its contribution to the proton mass, tomography of the nucleon in combined coordinate and momentum space with deep exclusive reactions, and more. To meet the challenging requirements, the design of SoLID described here takes full advantage of recent progress in detector, data acquisition and computing technologies. In addition, we outline potential experiments beyond the currently approved program and discuss the physics that could be explored should upgrades of CEBAF become a reality in the future. △ Less

Submitted 12 February, 2023; v1 submitted 18 September, 2022; originally announced September 2022.

Comments: This white paper for the SoLID program at Jefferson Lab was prepared in part as an input to the 2023 NSAC Long Range Planning exercise. To be submitted to J. Phys. G

Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience

Authors: Alireza Assar, Filipe Martinho, Jes Larsen, Nishant Saini, Denver Shearer, Marcos V. Moro, Fredrik Stulen, Sigbjørn Grini, Sara Engberg, Eugen Stamate, Jørgen Schou, Lasse Vines, Stela Canulescu, Charlotte Platzer-Björkman, Ole Hansen

Abstract: Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high temperature constraints, where the interface between subcells is subject to a trade-off betwee… ▽ More Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom cell architectures are compatible, due to either epitaxy or high temperature constraints, where the interface between subcells is subject to a trade-off between transmittance, electrical interconnection, and bottom cell degradation. Using polySi/SiOx passivating contacts for Si, this degradation can be largely circumvented by tuning the polySi/SiOx stacks to promote gettering of contaminants admitted into the Si bottom cell during the top cell synthesis. Applying this concept to the low-cost top cell chalcogenides Cu2ZnSnS4 (CZTS), CuGaSe2 (CGSe) and AgInGaSe2 (AIGSe), fabricated under harsh S or Se atmospheres above 550 °C, we show that increasing the heavily-doped polySi layer thickness from 40 to up to 400 nm prevents a reduction in Si carrier lifetime by one order of magnitude, with final lifetimes above 500 us uniformly across areas up to 20 cm2. In all cases, the increased resilience was correlated with a 99.9% reduction in contaminant concentration in the c-Si bulk, provided by the thick polySi layer, which acts as a buried gettering layer in the tandem structure without compromising the Si passivation quality. The Si resilience decreased as AIGSe > CGSe > CZTS, in accordance with the measured Cu contamination profiles and higher annealing temperatures. An efficiency of up to 7% was achieved for a CZTS/Si tandem, where the Si bottom cell is no longer the limiting factor. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Comments: 31 pages, 13 figures

Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier

Authors: Alireza Hajijafarassar, Filipe Martinho, Fredrik Stulen, Sigbjørn Grini, Simón López-Mariño, Moises Espíndola-Rodríguez, Max Döbeli, Stela Canulescu, Eugen Stamate, Mungunshagai Gansukh, Sara Engberg, Andrea Crovetto, Lasse Vines, Jørgen Schou, Ole Hansen

Abstract: Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage… ▽ More Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (>500 C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (<25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ,s. i.e., a promising implied open-circuit voltage (i-Voc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a Voc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Persistent double layer formation in kesterite solar cells: a critical review

Authors: Filipe Martinho, Simon Lopez-Marino, Moises Espíndola-Rodríguez, Alireza Hajijafarassar, Fredrik Stulen, Sigbjørn Grini, Max Döbeli, Mungunshagai Gansukh, Sara Engberg, Eugen Stamate, Lasse Vines, Jørgen Schou, Ole Hansen, Stela Canulescu

Abstract: In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate… ▽ More In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate the different mechanisms proposed. Using a cosputtering-based approach, we show that the two layers can differ significantly in morphology, composition and optoelectronic properties, and complement the results with a statistical dataset of over 850 individual CZTS solar cells. By reducing the absorber thickness from above 1000 nm to 300 nm, we show that the double layer segregation is alleviated. In turn, we see a progressive improvement in the device performance for lower thickness, which alone would be inconsistent with the known case of ultrathin CIGS solar cells. By comparing the results with CZTS grown on monocrystalline Si substrates, without a native Na supply, we show that the alkali metal supply does not determine the double layer formation, but merely reduces the threshold for its occurrence. Instead, we propose that the main formation mechanism is the early migration of Cu to the surface during annealing and formation of Cu2-xS phases, in a self-regulating process akin to the Kirkendall effect. We comment on the generality of the mechanism proposed, comparing our results to other synthesis routes, including our own in-house results from solution processing and pulsed laser deposition of sulfide and oxide-based targets. Although the double layer occurrence largely depends on the kesterite synthesis route, the common factors determining the double layer occurrence appear to be the presence of metallic Cu and/or a chalcogen deficiency in the precursor matrix. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 40 pages, 11 figures

Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS

Authors: Filipe Martinho, Alireza Hajijafarassar, Simón Lopez-Marino, Moises Espíndola-Rodríguez, Sara Engberg, Mungunshagai Gansukh, Fredrik Stulen, Sigbjørn Grini, Stela Canulescu, Eugen Stamate, Andrea Crovetto, Lasse Vines, Jørgen Schou, Ole Hansen

Abstract: The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which t… ▽ More The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device level that the protection of the Si bottom cell is largely dependent on the barrier layer engineering. Several monolithic CZTS/Si tandem solar cells with open-circuit voltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved, indicating a performance comparable to conventional interfacial layers based on transparent conductive oxides, and pointing to a promising alternative design in solar energy conversion devices. △ Less

Submitted 16 October, 2020; originally announced October 2020.

Comments: 31 pages, 10 Figures

Thermal radiation dominated heat transfer in nanomechanical silicon nitride drum resonators

Authors: Markus Piller, Pedram Sadeghi, Robert G. West, Niklas Luhmann, Paolo Martini, Ole Hansen, Silvan Schmid

Abstract: Nanomechanical silicon nitride (SiN) drum resonators are currently employed in various fields of applications that arise from their unprecedented frequency response to physical quantities. In the present study, we investigate the thermal transport in nanomechanical SiN drum resonators by analytical modelling, computational simulations, and experiments for a better understanding of the underlying h… ▽ More Nanomechanical silicon nitride (SiN) drum resonators are currently employed in various fields of applications that arise from their unprecedented frequency response to physical quantities. In the present study, we investigate the thermal transport in nanomechanical SiN drum resonators by analytical modelling, computational simulations, and experiments for a better understanding of the underlying heat transfer mechanism causing the thermal frequency response. Our analysis indicates that radiative heat loss is a non-negligible heat transfer mechanism in nanomechanical SiN resonators limiting their thermal responsivity and response time. This finding is important for optimal resonator designs for thermal sensing applications as well as cavity optomechanics. △ Less

Submitted 20 May, 2020; originally announced May 2020.

Comments: 8 pages, 4 figures in main text, 3 figures in supplementary

Validation of a model for estimating the strength of the vortex created by a Vortex Generator from its Bound Circulation

Authors: Martin O. L. Hansen, Antonios Charalampous, Jean-Marc Foucaut, Christophe Cuvier, Clara M. Velte

Abstract: A hypothesis is tested and validated for predicting the vortex strength induced by a vortex generator in wall-bounded flow by combining the knowledge of the Vortex Generator (VG) geometry and the approaching boundary layer velocity distribution. In this paper, the spanwise distribution of bound circulation on the vortex generator is computed from integrating the pressure force along the VG height… ▽ More A hypothesis is tested and validated for predicting the vortex strength induced by a vortex generator in wall-bounded flow by combining the knowledge of the Vortex Generator (VG) geometry and the approaching boundary layer velocity distribution. In this paper, the spanwise distribution of bound circulation on the vortex generator is computed from integrating the pressure force along the VG height calculated using CFD. It is then assumed that all this bound circulation is shed into the wake to fulfill Helmholtz's theorem and then curl up into one primary tip vortex. To validate this, the trailed circulation estimated from the distribution of the bound circulation is compared to the one in the wake behind the vortex generator determined directly from the wake velocities at some downstream distance. In practical situations, the pressure distribution on the vane is unknown and consequently other estimates of the spanwise force distribution on the VG must instead be applied, such as using 2D airfoil data corresponding to the VG geometry at each wall-normal distance. Such models have previously been proposed and used as an engineering tool to aid preliminary VG design and it is not the purpose of this paper to refine such engineering models, but to validate their assumptions such as applying a lifting line model on a VG that has a very low aspect ratio and placed in wall boundary layer. Herein, high Reynolds number boundary layer measurements of VG induced flow were used to validate the Reynolds Averaged Navier-Stokes (RANS) modeled circulation results and are used for further illustration and validation of the hypothesis. △ Less

Submitted 12 July, 2019; originally announced July 2019.

Comments: Accepted for publication

Multiple vortex structures in the wake of a rectangular winglet in ground effect

Authors: Clara M. Velte, Martin O. L. Hansen, Valery L. Okulov

Abstract: Patterns of vorticity in the wake of a single rectangular winglet (vortex generator) embedded in a turbulent boundary layer have been studied using Stereoscopic Particle Image Velocimetry (SPIV). The winglet was mounted normally to a flat surface with an angle to the oncoming flow. A parametric study varying the winglet height (constant aspect ratio) and angle has shown, contrary to the common cla… ▽ More Patterns of vorticity in the wake of a single rectangular winglet (vortex generator) embedded in a turbulent boundary layer have been studied using Stereoscopic Particle Image Velocimetry (SPIV). The winglet was mounted normally to a flat surface with an angle to the oncoming flow. A parametric study varying the winglet height (constant aspect ratio) and angle has shown, contrary to the common classical single tip-vortex conception, that the wake generally consists of a complex system of multiple vortex structures. The primary vortex has previously been discovered to contain a direct coupling between the axial and the rotational flow. In the current work, even the longitudinal secondary structures detected from measured streamwise vorticity display similar behavior. A regime map depicting the observed stable far wake states of the multiple vortices as a function of winglet height and angle reveals complex patterns of the flow topologies not only with the primary tip vortex, but with the additional secondary structures as well. A bifurcation diagram shows distinct regimes of the various secondary structures as well as how the primary vortex is in some cases significantly affected by their presence. These data should serve as inspiration in the process of generating longitudinal vortices for enhancement of heat and mass transfer in industrial devices since the multiple vortex regimes can help improve the conditions for these exchanges. Further, these results point to a weakness in existing inviscid models not accounting for the possibility of multiple vortical structures in the wake. △ Less

Submitted 14 June, 2019; originally announced June 2019.

Journal ref: Experimental Thermal and Fluid Science, vol 72, p. 31-39, 2016

Alteration of helical vortex core without change in flow topology

Authors: Clara M. Velte, Valery L. Okulov, Martin O. L. Hansen

Abstract: The abrupt expansion of the slender vortex core with changes in flow topology is commonly known as vortex breakdown. We present new experimental observations of an alteration of the helical vortex core in wall bounded turbulent flow with abrupt growth in core size, but without change in flow topology. The helical symmetry as such is preserved, though the characteristic parameters of helical symmet… ▽ More The abrupt expansion of the slender vortex core with changes in flow topology is commonly known as vortex breakdown. We present new experimental observations of an alteration of the helical vortex core in wall bounded turbulent flow with abrupt growth in core size, but without change in flow topology. The helical symmetry as such is preserved, though the characteristic parameters of helical symmetry of the vortex core transfer from a smooth linear variation to a different trend under the influence of a non-uniform pressure gradient, causing an increase in helical pitch without changing its sign. △ Less

Submitted 14 June, 2019; originally announced June 2019.

Journal ref: Physics of Fluids, vol: 23, issue: 5, pages: 051707, 2011

Helical structure of longitudinal vortices embedded in turbulent wall-bounded flow

Authors: Clara M. Velte, Martin O. L. Hansen, Valery L. Okulov

Abstract: Embedded vortices in turbulent wall-bounded flow over a flat plate, generated by a passive rectangular vane-type vortex generator with variable angle $β$ to the incoming flow in a low-Reynolds number flow ($Re=2600$ based on the inlet grid mesh size $L=0.039\;$m and free stream velocity $U_{\infty} = 1.0\;$m s$^{-1}$) have been studied with respect to helical symmetry. The studies were carried out… ▽ More Embedded vortices in turbulent wall-bounded flow over a flat plate, generated by a passive rectangular vane-type vortex generator with variable angle $β$ to the incoming flow in a low-Reynolds number flow ($Re=2600$ based on the inlet grid mesh size $L=0.039\;$m and free stream velocity $U_{\infty} = 1.0\;$m s$^{-1}$) have been studied with respect to helical symmetry. The studies were carried out in a low-speed closed-circuit wind tunnel utilizing Stereoscopic Particle Image Velocimetry (SPIV). The vortices have been shown to possess helical symmetry, allowing the flow to be described in a simple fashion. Iso-contour maps of axial vorticity revealed a dominant primary vortex and a weaker secondary one for $20^{\circ} \leq β\leq 40^{\circ}$. For angles outside of this range, the helical symmetry was impaired due to the emergence of additional flow effects. A model describing the flow has been utilized, showing strong concurrence with the measurements, even though the model is decoupled from external flow processes that could perturb the helical symmetry. The pitch, vortex core size, circulation and the advection velocity of the vortex all vary linearly with the device angle $β$. This is important for flow control, since one thereby can determine the axial velocity induced by the helical vortex as well as the swirl redistributing the axial velocity component for a given device angle $β$. This also simplifies theoretical studies, \eg to understand and predict the stability of the vortex and to model the flow numerically. △ Less

Submitted 14 June, 2019; originally announced June 2019.

Journal ref: Journal of Fluid Mechanics, vol: 619, pages: 167-177, 2009

Tunable MEMS VCSEL on Silicon substrate

Authors: Hitesh Kumar Sahoo, Thor Ansbæk, Luisa Ottaviano, Elizaveta Semenova, Fyodor Zubov, Ole Hansen, Kresten Yvind

Abstract: We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS el… ▽ More We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum wells for amplification and a deposited dielectric DBR as the top mirror. A 40 nm tuning range and a mechanical resonance frequency in excess of 2 MHz are demonstrated. △ Less

Submitted 20 March, 2019; originally announced March 2019.

Pump-Enhanced Continuous-Wave Magnetometry using Nitrogen-Vacancy Ensembles

Authors: Sepehr Ahmadi, Haitham A. R. El-Ella, Jørn O. B. Hansen, Alexander Huck, Ulrik L. Andersen

Abstract: Ensembles of nitrogen-vacancy centers in diamond are a highly promising platform for high-sensitivity magnetometry, whose efficacy is often based on efficiently generating and monitoring magnetic-field dependent infrared fluorescence. Here we report on an increased sensing efficiency with the use of a 532-nm resonant confocal cavity and a microwave resonator antenna for measuring the local magneti… ▽ More Ensembles of nitrogen-vacancy centers in diamond are a highly promising platform for high-sensitivity magnetometry, whose efficacy is often based on efficiently generating and monitoring magnetic-field dependent infrared fluorescence. Here we report on an increased sensing efficiency with the use of a 532-nm resonant confocal cavity and a microwave resonator antenna for measuring the local magnetic noise density using the intrinsic nitrogen-vacancy concentration of a chemical-vapor deposited single-crystal diamond. We measure a near-shot-noise-limited magnetic noise floor of 200 pT/$\sqrt{\text{Hz}}$ spanning a bandwidth up to 159 Hz, and an extracted sensitivity of approximately 3 nT/$\sqrt{\text{Hz}}$, with further enhancement limited by the noise floor of the lock-in amplifier and the laser damage threshold of the optical components. Exploration of the microwave and optical pump-rate parameter space demonstrates a linewidth-narrowing regime reached by virtue of using the optical cavity, allowing an enhanced sensitivity to be achieved, despite an unoptimized collection efficiency of <2 %, and a low nitrogen-vacancy concentration of about 0.2 ppb. △ Less

Submitted 6 September, 2017; v1 submitted 3 July, 2017; originally announced July 2017.

Comments: 10 pages and 5 figures

Journal ref: Physical Review Applied 8, 034001 (2017)

Design and expected performance of the MICE demonstration of ionization cooling

Authors: MICE Collaboration, M. Bogomilov, R. Tsenov, G. Vankova-Kirilova, Y. Song, J. Tang, Z. Li, R. Bertoni, M. Bonesini, F. Chignoli, R. Mazza, V. Palladino, A. de Bari, G. Cecchet, D. Orestano, L. Tortora, Y. Kuno, S. Ishimoto, F. Filthaut, D. Jokovic, D. Maletic, M. Savic, O. M. Hansen, S. Ramberger, M. Vretenar , et al. (107 additional authors not shown)

Abstract: Muon beams of low emittance provide the basis for the intense, well-characterised neutrino beams necessary to elucidate the physics of flavour at a neutrino factory and to provide lepton-antilepton collisions at energies of up to several TeV at a muon collider. The international Muon Ionization Cooling Experiment (MICE) aims to demonstrate ionization cooling, the technique by which it is proposed… ▽ More Muon beams of low emittance provide the basis for the intense, well-characterised neutrino beams necessary to elucidate the physics of flavour at a neutrino factory and to provide lepton-antilepton collisions at energies of up to several TeV at a muon collider. The international Muon Ionization Cooling Experiment (MICE) aims to demonstrate ionization cooling, the technique by which it is proposed to reduce the phase-space volume occupied by the muon beam at such facilities. In an ionization-cooling channel, the muon beam passes through a material in which it loses energy. The energy lost is then replaced using RF cavities. The combined effect of energy loss and re-acceleration is to reduce the transverse emittance of the beam (transverse cooling). A major revision of the scope of the project was carried out over the summer of 2014. The revised experiment can deliver a demonstration of ionization cooling. The design of the cooling demonstration experiment will be described together with its predicted cooling performance. △ Less

Submitted 27 January, 2017; v1 submitted 23 January, 2017; originally announced January 2017.

Comments: 21 pages, 10 figures

Report number: RAL-P-2017-002

Journal ref: Phys. Rev. Accel. Beams 20, 063501 (2017)

Pion contamination in the MICE muon beam

Authors: D. Adams, A. Alekou, M. Apollonio, R. Asfandiyarov, G. Barber, P. Barclay, A. de Bari, R. Bayes, V. Bayliss, R. Bertoni, V. J. Blackmore, A. Blondel, S. Blot, M. Bogomilov, M. Bonesini, C. N. Booth, D. Bowring, S. Boyd, T. W. Bradshaw, U. Bravar, A. D. Bross, M. Capponi, T. Carlisle, G. Cecchet, C. Charnley , et al. (120 additional authors not shown)

Abstract: The international Muon Ionization Cooling Experiment (MICE) will perform a systematic investigation of ionization cooling with muon beams of momentum between 140 and 240\,MeV/c at the Rutherford Appleton Laboratory ISIS facility. The measurement of ionization cooling in MICE relies on the selection of a pure sample of muons that traverse the experiment. To make this selection, the MICE Muon Beam i… ▽ More The international Muon Ionization Cooling Experiment (MICE) will perform a systematic investigation of ionization cooling with muon beams of momentum between 140 and 240\,MeV/c at the Rutherford Appleton Laboratory ISIS facility. The measurement of ionization cooling in MICE relies on the selection of a pure sample of muons that traverse the experiment. To make this selection, the MICE Muon Beam is designed to deliver a beam of muons with less than $\sim$1\% contamination. To make the final muon selection, MICE employs a particle-identification (PID) system upstream and downstream of the cooling cell. The PID system includes time-of-flight hodoscopes, threshold-Cherenkov counters and calorimetry. The upper limit for the pion contamination measured in this paper is $f_π< 1.4\%$ at 90\% C.L., including systematic uncertainties. Therefore, the MICE Muon Beam is able to meet the stringent pion-contamination requirements of the study of ionization cooling. △ Less

Submitted 10 February, 2016; v1 submitted 2 November, 2015; originally announced November 2015.

Comments: 16 pages, 7 figures

Report number: RAL-P-2015-009

Journal ref: JINST 11 (2016) 03, P03002

Electron-Muon Ranger: performance in the MICE Muon Beam

Authors: D. Adams, A. Alekou, M. Apollonio, R. Asfandiyarov, G. Barber, P. Barclay, A. de Bari, R. Bayes, V. Bayliss, P. Bene, R. Bertoni, V. J. Blackmore, A. Blondel, S. Blot, M. Bogomilov, M. Bonesini, C. N. Booth, D. Bowring, S. Boyd, T. W. Bradshaw, U. Bravar, A. D. Bross, F. Cadoux, M. Capponi, T. Carlisle , et al. (129 additional authors not shown)

Abstract: The Muon Ionization Cooling Experiment (MICE) will perform a detailed study of ionization cooling to evaluate the feasibility of the technique. To carry out this program, MICE requires an efficient particle-identification (PID) system to identify muons. The Electron-Muon Ranger (EMR) is a fully-active tracking-calorimeter that forms part of the PID system and tags muons that traverse the cooling c… ▽ More The Muon Ionization Cooling Experiment (MICE) will perform a detailed study of ionization cooling to evaluate the feasibility of the technique. To carry out this program, MICE requires an efficient particle-identification (PID) system to identify muons. The Electron-Muon Ranger (EMR) is a fully-active tracking-calorimeter that forms part of the PID system and tags muons that traverse the cooling channel without decaying. The detector is capable of identifying electrons with an efficiency of 98.6%, providing a purity for the MICE beam that exceeds 99.8%. The EMR also proved to be a powerful tool for the reconstruction of muon momenta in the range 100-280 MeV/$c$. △ Less

Submitted 3 November, 2015; v1 submitted 28 October, 2015; originally announced October 2015.

Comments: 22 pages, 19 figures

Report number: RAL-P-2015-008

Full-field hard x-ray microscopy with interdigitated silicon lenses

Authors: Hugh Simons, Frederik Stöhr, Jonas Michael-Lindhard, Flemming Jensen, Ole Hansen, Carsten Detlefs, Henning Friis Poulsen

Abstract: Full-field x-ray microscopy using x-ray objectives has become a mainstay of the biological and materials sciences. However, the inefficiency of existing objectives at x-ray energies above 15 keV has limited the technique to weakly absorbing or two-dimensional (2D) samples. Here, we show that significant gains in numerical aperture and spatial resolution may be possible at hard x-ray energies by us… ▽ More Full-field x-ray microscopy using x-ray objectives has become a mainstay of the biological and materials sciences. However, the inefficiency of existing objectives at x-ray energies above 15 keV has limited the technique to weakly absorbing or two-dimensional (2D) samples. Here, we show that significant gains in numerical aperture and spatial resolution may be possible at hard x-ray energies by using silicon-based optics comprising 'interdigitated' refractive silicon lenslets that alternate their focus between the horizontal and vertical directions. By capitalizing on the nano-manufacturing processes available to silicon, we show that it is possible to overcome the inherent inefficiencies of silicon-based optics and interdigitated geometries. As a proof-of-concept of Si-based interdigitated objectives, we demonstrate a prototype interdigitated lens with a resolution of ~255 nm at 17 keV. △ Less

Submitted 22 June, 2015; originally announced June 2015.

Comments: 10 pages, 5 figure. Submitted to Applied Physics Letters 31st March 2015, rejected 17th June 2015

Enhanced light-matter interaction in graphene-covered gold nanovoid arrays

Authors: Xiaolong Zhu, Lei Shi, Michael S. Schmidt, Anja Boisen, Ole Hansen, Jian Zi, Sanshui Xiao, N. Asger Mortensen

Abstract: The combination of graphene with noble-metal nanostructures is currently being explored for strong light-graphene interaction enhanced by plasmons. We introduce a novel hybrid graphene-metal system for studying light-matter interactions with gold-void nanostructures exhibiting resonances in the visible range. Strong coupling of graphene layers to the plasmon modes of the nanovoid arrays results in… ▽ More The combination of graphene with noble-metal nanostructures is currently being explored for strong light-graphene interaction enhanced by plasmons. We introduce a novel hybrid graphene-metal system for studying light-matter interactions with gold-void nanostructures exhibiting resonances in the visible range. Strong coupling of graphene layers to the plasmon modes of the nanovoid arrays results in significant frequency shifts of the underlying plasmon resonances, enabling more than 30% absolute light absorption in a single layer of graphene and up to 700-fold enhancement of the Raman response of the graphene. These new perspectives enable us to verify the presence of graphene on gold-void arrays and the enhancement even allows us to accurately quantify the number of layers. Experimental observations are further supported by numerical simulations and perturbation-theory analysis. The graphene gold-void platform is beneficial for sensing of molecules and placing R6G dye molecules on top of the graphene, we observe a strong enhancement of the R6G Raman fingerprints. These results pave the way toward advanced substrates for surface-enhanced Raman scattering (SERS) with potential for unambiguous single-molecule detection on the atomically well-defined layer of graphene. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Comments: 17 pages including 5 figures

Journal ref: Nano Lett. 13, 4690 (2013)

Characterisation of the muon beams for the Muon Ionisation Cooling Experiment

Authors: The MICE Collaboration, D. Adams, D. Adey, A. Alekou, M. Apollonio, R. Asfandiyarov, J. Back, G. Barber, P. Barclay, A. de Bari, R. Bayes, V. Bayliss, R. Bertoni, V. J. Blackmore, A. Blondel, S. Blot, M. Bogomilov, M. Bonesini, C. N. Booth, D. Bowring, S. Boyd, T. W. Bradshaw, U. Bravar, A. D. Bross, M. Capponi , et al. (119 additional authors not shown)

Abstract: A novel single-particle technique to measure emittance has been developed and used to characterise seventeen different muon beams for the Muon Ionisation Cooling Experiment (MICE). The muon beams, whose mean momenta vary from 171 to 281 MeV/c, have emittances of approximately 1.5--2.3 πmm-rad horizontally and 0.6--1.0 πmm-rad vertically, a horizontal dispersion of 90--190 mm and momentum spreads o… ▽ More A novel single-particle technique to measure emittance has been developed and used to characterise seventeen different muon beams for the Muon Ionisation Cooling Experiment (MICE). The muon beams, whose mean momenta vary from 171 to 281 MeV/c, have emittances of approximately 1.5--2.3 πmm-rad horizontally and 0.6--1.0 πmm-rad vertically, a horizontal dispersion of 90--190 mm and momentum spreads of about 25 MeV/c. There is reasonable agreement between the measured parameters of the beams and the results of simulations. The beams are found to meet the requirements of MICE. △ Less

Submitted 11 October, 2013; v1 submitted 6 June, 2013; originally announced June 2013.

Comments: Published in EPJC, 20 pages, 15 figures

Experimental observation of plasmons in a graphene monolayer resting on a two-dimensional subwavelength silicon grating

Authors: Xiaolong Zhu, Wei Yan, Peter Uhd Jepsen, Ole Hansen, N. Asger Mortensen, Sanshui Xiao

Abstract: We experimentally demonstrate graphene-plasmon polariton excitation in a continuous graphene monolayer resting on a two-dimensional subwavelength silicon grating. The subwavelength silicon grating is fabricated by a nanosphere lithography technique with a self-assembled nanosphere array as a template. Measured transmission spectra illustrate the excitation of graphene-plasmon polaritons, which is… ▽ More We experimentally demonstrate graphene-plasmon polariton excitation in a continuous graphene monolayer resting on a two-dimensional subwavelength silicon grating. The subwavelength silicon grating is fabricated by a nanosphere lithography technique with a self-assembled nanosphere array as a template. Measured transmission spectra illustrate the excitation of graphene-plasmon polaritons, which is further supported by numerical simulations and theoretical prediction of plasmonband diagrams. Our grating-assisted coupling to graphene-plasmon polaritons forms an important platform for graphene-based opto-electronics applications. △ Less

Submitted 22 March, 2013; v1 submitted 15 January, 2013; originally announced January 2013.

Comments: 13 pages, 4 figures, revised version accepted by APL

Journal ref: Appl. Phys. Lett. 102, 131101 (2013)