Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal
Authors:
T. Zabelotsky,
S. Singh,
G. Haim,
R. Malkinson,
S. Kadkhodazadeh,
I. P. Radko,
I. Aharonovich,
H. Steinberg,
Kirstine Berg-Sørensen,
A. Huck,
T. Taniguchi,
K. Watanabe,
N. Bar-Gill
Abstract:
Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defe…
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Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper we study various techniques, focused ion beam (FIB), electron irradiation and ion implantation, for the preparation of hBN flakes from bulk crystals, and relevant post-processing treatments to create VB${^-}$s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimising implantation parameters, while careful sample cleaning proved important to achieve best results.
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Submitted 9 May, 2023;
originally announced May 2023.
Enhanced quantum properties of shallow diamond atomic defects through nitrogen surface termination
Authors:
R. Malkinson,
M. K. Kuntumalla,
A. Hoffman,
N. Bar-Gill
Abstract:
Nitrogen vacancy (NV) centers in diamond have emerged in recent years as leading quantum sensors in various modalities. Most applications benefit from shallow NVs, enabling higher sensitivity and resolution. However, near surface NVs ($<$ 20 nm depth) suffer from reduced stability and coherence properties due to additional noise. We demonstrate a novel surface termination technique based on nitrog…
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Nitrogen vacancy (NV) centers in diamond have emerged in recent years as leading quantum sensors in various modalities. Most applications benefit from shallow NVs, enabling higher sensitivity and resolution. However, near surface NVs ($<$ 20 nm depth) suffer from reduced stability and coherence properties due to additional noise. We demonstrate a novel surface termination technique based on nitrogen plasma under non-damaging conditions, achieving significant improvement in NV optical stability and quantum coherence.
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Submitted 31 January, 2023;
originally announced January 2023.
