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An ultraviolet photodetector based on conductive hydrogenated TiO$_2$ film prepared by radio frequency atmospheric pressure plasma
Authors:
Yu Zhang,
Haozhe Wang,
Jie Cui,
Tao He,
Gaote Qiu,
Yu Xu,
Jing Zhang
Abstract:
The growing demand for real-time ultraviolet (UV) monitoring calls for a simple, rapid, and low-cost strategy to prepare UV photodetectors. We prepare a wearable real-time UV photodetector based on hydrogenated titanium dioxide film synthesized by radio frequency atmospheric pressure plasma. The conductivity of our hydrogenated titanium dioxide is improved to 10.2 S cm$^{-1}$, 9 orders of magnitud…
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The growing demand for real-time ultraviolet (UV) monitoring calls for a simple, rapid, and low-cost strategy to prepare UV photodetectors. We prepare a wearable real-time UV photodetector based on hydrogenated titanium dioxide film synthesized by radio frequency atmospheric pressure plasma. The conductivity of our hydrogenated titanium dioxide is improved to 10.2 S cm$^{-1}$, 9 orders of magnitude higher than that of pristine titanium dioxide after 10 min plasma treatment. Plasma hydrogenation disrupts the surface crystal structure, introducing oxygen vacancies (OVs) that create self-doped titanium(III) and titanium (II) species. First-principles calculations indicate the OVs raise the Fermi level of TiO$_2$ and distort the lattice nearby. Our optimized film has a distinctive periodic switching characteristic under intermittent illumination and good responsivity from 280 - 400 nm, peaking at 632.35 mA W^{-1}$ at 365 nm. The fabricated wearable sensor based on the optimized film effectively performs the monitoring of the daily variation of ambient UV intensity in three typical weather types and transferring its data to a smartphone via Wi-Fi.
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Submitted 29 March, 2024;
originally announced March 2024.
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Super-resolved snapshot hyperspectral imaging of solid-state quantum emitters for high-throughput integrated quantum technologies
Authors:
Shunfa Liu,
Xueshi Li,
Hanqing Liu,
Guixin Qiu,
Jiantao Ma,
Liang Nie,
Haiqiao Ni,
Zhichuan Niu,
Cheng-Wei Qiu,
Xuehua Wang,
Jin Liu
Abstract:
Solid-state quantum emitters coupled to integrated photonic nanostructures are quintessential for exploring fundamental phenomena in cavity quantum electrodynamics and widely employed in photonic quantum technologies such as non-classical light sources, quantum repeaters, and quantum transducers, etc. One of the most exciting promises from integrated quantum photonics is the potential of scalabili…
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Solid-state quantum emitters coupled to integrated photonic nanostructures are quintessential for exploring fundamental phenomena in cavity quantum electrodynamics and widely employed in photonic quantum technologies such as non-classical light sources, quantum repeaters, and quantum transducers, etc. One of the most exciting promises from integrated quantum photonics is the potential of scalability that enables massive productions of miniaturized devices on a single chip. In reality, the yield of efficient and reproducible light-matter couplings is greatly hindered by the spectral and spatial mismatches between the single solid-state quantum emitters and confined or propagating optical modes supported by the photonic nanostructures, preventing the high-throughput realization of large-scale integrated quantum photonic circuits for more advanced quantum information processing tasks. In this work, we introduce the concept of hyperspectral imaging in quantum optics, for the first time, to address such a long-standing issue. By exploiting the extended mode with a unique dispersion in a 1D planar cavity, the spectral and spatial information of each individual quantum dot in an ensemble can be accurately and reliably extracted from a single wide-field photoluminescence image with super-resolutions. With the extracted quantum dot positions and emission wavelengths, surface-emitting quantum light sources and in-plane photonic circuits can be deterministically fabricated with a high-throughput by etching the 1D confined planar cavity into 3D confined micropillars and 2D confined waveguides. Further extension of this technique by employing an open planar cavity could be exploited for pursuing a variety of compact quantum photonic devices with expanded functionalities for large-scale integration. Our work is expected to change the landscape of integrated quantum photonic technology.
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Submitted 5 November, 2023;
originally announced November 2023.
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A blind zone-suppressed hybrid beam steering for solid-state Lidar
Authors:
Chao Li,
Xianyi Cao,
Kan Wu,
Gaofeng Qiu,
Minglu Cai,
Guangjin Zhang,
Xinwan Li,
Jianping Chen
Abstract:
We demonstrate a blind zone-suppressed and flash-emitting solid-state Lidar based on lens-assisted beam steering (LABS) technology. As a proof-of-concept demonstration, with a design of subwavelength-gap one-dimensional (1D) long-emitter array and multi-wavelength flash beam emitting, the device was measured to have 5%-blind zone suppression, 0.06°/point-deflection step and 4.2 microsecond-scannin…
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We demonstrate a blind zone-suppressed and flash-emitting solid-state Lidar based on lens-assisted beam steering (LABS) technology. As a proof-of-concept demonstration, with a design of subwavelength-gap one-dimensional (1D) long-emitter array and multi-wavelength flash beam emitting, the device was measured to have 5%-blind zone suppression, 0.06°/point-deflection step and 4.2 microsecond-scanning speed. In time-of-flight (TOF) ranging experiments, Lidar systems have field of view of 11.3°* 8.1° (normal device) or 0.9°*8.1° (blind-zone suppressed device), far-field number of resolved points of 192 and a detection distance of 10 m. This work demonstrates the possibility that a new integrated beam-steering technology can be implemented in a Lidar without sacrificing other performance.
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Submitted 23 June, 2021;
originally announced July 2021.
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A Ferroelectric Semiconductor Field-Effect Transistor
Authors:
Mengwei Si,
Atanu K. Saha,
Shengjie Gao,
Gang Qiu,
Jingkai Qin,
Yuqin Duan,
Jie Jian,
Chang Niu,
Haiyan Wang,
Wenzhuo Wu,
Sumeet K. Gupta,
Peide D. Ye
Abstract:
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-eff…
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Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.
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Submitted 9 January, 2020; v1 submitted 7 December, 2018;
originally announced December 2018.
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Understanding the volatility smile of options markets through microsimulation
Authors:
G. Qiu,
D. Kandhai,
P. M. A. Sloot
Abstract:
In this work, we aim to gain a better understanding of the volatility smile observed in options markets through microsimulation (MS). We adopt two types of active traders in our MS model: speculators and arbitrageurs, and call and put options on one underlying asset. Speculators make decisions based on their expectations of the asset price at the option expiration time. Arbitrageurs trade at dif…
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In this work, we aim to gain a better understanding of the volatility smile observed in options markets through microsimulation (MS). We adopt two types of active traders in our MS model: speculators and arbitrageurs, and call and put options on one underlying asset. Speculators make decisions based on their expectations of the asset price at the option expiration time. Arbitrageurs trade at different arbitrage opportunities such as violation of put-call parity. Difference in liquidity among options is also included. Notwithstanding its simplicity, our model can generate implied volatility (IV) curves similar to empirical observations. Our results suggest that the volatility smile is related to the competing effect of heterogeneous trading behavior and the impact of differential liquidity.
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Submitted 30 October, 2008; v1 submitted 13 September, 2007;
originally announced September 2007.