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An inverse-designed nanophotonic interface for excitons in atomically thin materials
Authors:
Ryan J. Gelly,
Alexander D. White,
Giovanni Scuri,
Xing Liao,
Geun Ho Ahn,
Bingchen Deng,
Kenji Watanabe,
Takashi Taniguchi,
Jelena Vučković,
Hongkun Park
Abstract:
Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encap…
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Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenides (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.
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Submitted 25 August, 2023;
originally announced August 2023.
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Beam steering at the nanosecond time scale with an atomically thin reflector
Authors:
Trond I. Andersen,
Ryan J. Gelly,
Giovanni Scuri,
Bo L. Dwyer,
Dominik S. Wild,
Rivka Bekenstein,
Andrey Sushko,
Jiho Sung,
You Zhou,
Alexander A. Zibrov,
Xiaoling Liu,
Andrew Y. Joe,
Kenji Watanabe,
Takashi Taniguchi,
Susanne F. Yelin,
Philip Kim,
Hongkun Park,
Mikhail D. Lukin
Abstract:
Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thi…
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Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thin semiconductor with strong light-matter interactions. By combining the high reflectivity of a MoSe2 monolayer with a graphene split-gate geometry, we shape the wavefront phase profile to achieve continuously tunable beam deflection with a range of 10$^\circ$, two-dimensional beam steering, and switching times down to 1.6 nanoseconds. Our approach opens the door for a new class of atomically thin optical systems, such as rapidly switchable beam arrays and quantum metasurfaces operating at their fundamental thickness limit.
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Submitted 14 July, 2023; v1 submitted 8 November, 2021;
originally announced November 2021.
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Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer
Authors:
Ryan J. Gelly,
Dylan Renaud,
Xing Liao,
Benjamin Pingault,
Stefan Bogdanovic,
Giovanni Scuri,
Kenji Watanabe,
Takashi Taniguchi,
Bernhard Urbaszek,
Hongkun Park,
Marko Lončar
Abstract:
Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscap…
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Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.
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Submitted 1 March, 2021;
originally announced March 2021.
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Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers
Authors:
Jiho Sung,
You Zhou,
Giovanni Scuri,
Viktor Zólyomi,
Trond I. Andersen,
Hyobin Yoo,
Dominik S. Wild,
Andrew Y. Joe,
Ryan J. Gelly,
Hoseok Heo,
Damien Bérubé,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail D. Lukin,
Philip Kim,
Vladimir I. Fal'ko,
Hongkun Park
Abstract:
Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trapping, host Mott insulating and supercondu…
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Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trapping, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures also feature atomic reconstruction and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of typical moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties of these heterostructures could not be investigated systematically and have often been ignored. Here, we use near-0$^o$ twist angle MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane (z) electric dipole moments in opposite directions. The dipole orientation of ground-state $Γ$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields, while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study reveals the profound impacts of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering.
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Submitted 4 January, 2020;
originally announced January 2020.
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Electrically tunable valley dynamics in twisted WSe$_2$/WSe$_2$ bilayers
Authors:
Giovanni Scuri,
Trond I. Andersen,
You Zhou,
Dominik S. Wild,
Jiho Sung,
Ryan J. Gelly,
Damien Bérubé,
Hoseok Heo,
Linbo Shao,
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Marko Lončar,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in…
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The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe$_2$/WSe$_2$ bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than three orders of magnitude via electrostatic doping, enabling switching of the DOCP from ~80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.
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Submitted 24 December, 2019;
originally announced December 2019.
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Controlling excitons in an atomically thin membrane with a mirror
Authors:
You Zhou,
Giovanni Scuri,
Jiho Sung,
Ryan J. Gelly,
Dominik S. Wild,
Kristiaan De Greve,
Andrew Y. Joe,
Takashi Taniguchi,
Kenji Watanabe,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
We demonstrate a new approach for dynamically manipulating the optical response of an atomically thin semiconductor, a monolayer of MoSe2, by suspending it over a metallic mirror. First, we show that suspended van der Waals heterostructures incorporating a MoSe2 monolayer host spatially homogeneous, lifetime-broadened excitons. Then, we interface this nearly ideal excitonic system with a metallic…
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We demonstrate a new approach for dynamically manipulating the optical response of an atomically thin semiconductor, a monolayer of MoSe2, by suspending it over a metallic mirror. First, we show that suspended van der Waals heterostructures incorporating a MoSe2 monolayer host spatially homogeneous, lifetime-broadened excitons. Then, we interface this nearly ideal excitonic system with a metallic mirror and demonstrate control over the exciton-photon coupling. Specifically, by electromechanically changing the distance between the heterostructure and the mirror, thereby changing the local photonic density of states in a controllable and reversible fashion, we show that both the absorption and emission properties of the excitons can be dynamically modulated. This electromechanical control over exciton dynamics in a mechanically flexible, atomically thin semiconductor opens up new avenues in cavity quantum optomechanics, nonlinear quantum optics, and topological photonics.
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Submitted 1 December, 2019; v1 submitted 24 January, 2019;
originally announced January 2019.
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Atomically thin mirrors made of monolayer semiconductors
Authors:
Giovanni Scuri,
You Zhou,
Alexander A. High,
Dominik S. Wild,
Chi Shu,
Kristiaan De Greve,
Luis A. Jauregui,
Takashi Taniguchi,
Kenji Watanabe,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
Transition metal dichalcogenide monolayers are promising candidates for exploring new electronic and optical phenomena and for realizing atomically thin optoelectronic devices. They host tightly bound electron-hole pairs (excitons) that can be efficiently excited by resonant light fields. Here, we demonstrate that a single monolayer of molybdenum diselenide (MoSe2) can dramatically modify light tr…
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Transition metal dichalcogenide monolayers are promising candidates for exploring new electronic and optical phenomena and for realizing atomically thin optoelectronic devices. They host tightly bound electron-hole pairs (excitons) that can be efficiently excited by resonant light fields. Here, we demonstrate that a single monolayer of molybdenum diselenide (MoSe2) can dramatically modify light transmission near the excitonic resonance, acting as an electrically switchable mirror that reflects up to 85% of incident light at cryogenic temperatures. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor, encapsulated by hexagonal boron nitride. Furthermore, we show that the MoSe2 monolayer exhibits power- and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used. These observations open up new possibilities for studying quantum nonlinear optical phenomena and topological photonics, and for miniaturizing optical devices.
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Submitted 19 May, 2017;
originally announced May 2017.
