Passive Laser Power Stabilization via an Optical Spring
Authors:
Torrey Cullen,
Scott Aronson,
Ron Pagano,
Marina Trad Nery,
Henry Cain,
Jonathon Cripe,
Garret D. Cole,
Safura Sharifi,
Nancy Aggarwal,
Benno Wilke,
Thomas Corbitt
Abstract:
Metrology experiments can be limited by the noise produced by the laser involved via small fluctuations in the laser's power or frequency. Typically, active power stabilization schemes consisting of an in-loop sensor and a feedback control loop are employed. Those schemes are fundamentally limited by shot noise coupling at the in-loop sensor. In this letter we propose to use the optical spring eff…
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Metrology experiments can be limited by the noise produced by the laser involved via small fluctuations in the laser's power or frequency. Typically, active power stabilization schemes consisting of an in-loop sensor and a feedback control loop are employed. Those schemes are fundamentally limited by shot noise coupling at the in-loop sensor. In this letter we propose to use the optical spring effect to passively stabilize the classical power fluctuations of a laser beam. In a proof of principle experiment, we show that the relative power noise of the laser is stabilized from approximately $2 \times 10^{-5}$ Hz$^{-1/2}$ to a minimum value of $1.6 \times 10^{-7}$ Hz$^{-1/2}$, corresponding to the power noise reduction by a factor of $125$. The bandwidth at which stabilization occurs ranges from $400$ Hz to $100$ kHz. The work reported in this letter further paves the way for high power laser stability techniques which could be implemented in optomechanical experiments and in gravitational wave detectors.
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Submitted 31 March, 2022;
originally announced April 2022.
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
Authors:
K. Garello,
F. Yasin,
H. Hody,
S. Couet,
L. Souriau,
S. H. Sharifi,
J. Swerts,
R. Carpenter,
S. Rao,
W. Kim,
J. Wu,
K. K. V. Sethu,
M. Pak,
N. Jossart,
D. Crotti,
A. Furnémont,
G. S. Kar
Abstract:
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our con…
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We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.
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Submitted 30 August, 2019; v1 submitted 18 July, 2019;
originally announced July 2019.
