Showing 1–21 of 21 results for author: Tartakovskii, A I

Femtosecond switching of strong light-matter interactions in microcavities with two-dimensional semiconductors

Authors: Armando Genco, Charalambos Louca, Cristina Cruciano, Kok Wee Song, Chiara Trovatello, Giuseppe Di Blasio, Giacomo Sansone, Sam Randerson, Peter Claronino, Rahul Jayaprakash, Kenji Watanabe, Takashi Taniguchi, David G. Lidzey, Oleksandr Kyriienko, Stefano Dal Conte, Alexander I. Tartakovskii, Giulio Cerullo

Abstract: Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator enhances such interactions and generates new polariton states which give access to unique nonlinear phenomena, such as Bose-Einstein condensation, used for all-opti… ▽ More Ultrafast all-optical logic devices based on nonlinear light-matter interactions hold the promise to overcome the speed limitations of conventional electronic devices. Strong coupling of excitons and photons inside an optical resonator enhances such interactions and generates new polariton states which give access to unique nonlinear phenomena, such as Bose-Einstein condensation, used for all-optical ultrafast polariton transistors. However, the pulse energies required to pump such devices range from tens to hundreds of pJ, making them not competitive with electronic transistors. Here we introduce a new paradigm for all-optical switching based on the ultrafast transition from the strong to the weak coupling regime in microcavities embedding atomically thin transition metal dichalcogenides. Employing single and double stacks of hBN-encapsulated MoS$_2$ homobilayers with high optical nonlinearities and fast exciton relaxation times, we observe a collapse of the 55-meV polariton gap and its revival in less than one picosecond, lowering the threshold for optical switching below 4 pJ per pulse, while retaining ultrahigh switching frequencies. As an additional degree of freedom, the switching can be triggered pumping either the intra- or the interlayer excitons of the bilayers at different wavelengths, speeding up the polariton dynamics, owing to unique interspecies excitonic interactions. Our approach will enable the development of compact ultrafast all-optical logical circuits and neural networks, showcasing a new platform for polaritonic information processing based on manipulating the light-matter coupling. △ Less

Submitted 31 July, 2024; originally announced August 2024.

Realization of Z$_2$ topological photonic insulators made from multilayer transition metal dichalcogenides

Authors: Tommi Isoniemi, Paul Bouteyre, Xuerong Hu, Fedor Benimetskiy, Yue Wang, Maurice S. Skolnick, Dmitry N. Krizhanovskii, Alexander I. Tartakovskii

Abstract: Monolayers of semiconducting transition metal dichalcogenides (TMDs) have long attracted interest for their intriguing optical and electronic properties. Recently TMDs in their quasi-bulk form have started to show considerable promise for nanophotonics thanks to their high refractive indices, large optical anisotropy, wide transparency windows reaching to the visible, and robust room temperature e… ▽ More Monolayers of semiconducting transition metal dichalcogenides (TMDs) have long attracted interest for their intriguing optical and electronic properties. Recently TMDs in their quasi-bulk form have started to show considerable promise for nanophotonics thanks to their high refractive indices, large optical anisotropy, wide transparency windows reaching to the visible, and robust room temperature excitons promising for nonlinear optics. Adherence of TMD layers to any substrate via van der Waals forces is a further key enabler for nanofabrication of sophisticated photonic structures requiring heterointegration. Here, we capitalize on these attractive properties and realize topological spin-Hall photonic lattices made of arrays of triangular nanoholes in 50 to 100 nm thick WS$_2$ flakes exfoliated on SiO$_2$/Si substrates. High quality structures are achieved taking advantage of anisotropic dry etching dictated by the crystal axes of WS$_2$. Reflectance measurements at room temperature show a photonic gap opening in the near-infrared in trivial and topological phases. Unidirectional propagation along the domain interface is demonstrated in real space via circularly polarized laser excitation in samples with both zigzag and armchair domain boundaries. Finite-difference time-domain simulations are used to interpret optical spectroscopy results. Our work opens the way for future sophisticated nanophotonic devices based on the layered (van der Waals) materials platform. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Comments: 34 pages, 18 figures

Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers

Authors: Alessandro Catanzaro, Armando Genco, Charalambos Louca, David A. Ruiz-Tijerina, Daniel J. Gillard, Luca Sortino, Aleksey Kozikov, Evgeny M. Alexeev, Riccardo Pisoni, Lee Hague, Kenji Watanabe, Takashi Taniguchi, Klauss Ensslin, Kostya S. Novoselov, Vladimir Fal'ko, Alexander I. Tartakovskii

Abstract: Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M… ▽ More Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: Supporting Information can be found downloading and extracting the gzipped tar source file listed under "Other formats"

Van der Waals Nanoantennas on Gold as Hosts for Hybrid Mie-Plasmonic Resonances

Authors: Sam A. Randerson, Panaiot G. Zotev, Xuerong Hu, Alexander Knight, Yadong Wang, Sharada Nagarkar, Dominic Hensman, Yue Wang, Alexander I. Tartakovskii

Abstract: Dielectric nanoresonators have been shown to circumvent the heavy optical losses associated with plasmonic devices, however they suffer from less confined resonances. By constructing a hybrid system of both dielectric and metallic materials, one can retain the low losses of dielectric resonances, whilst gaining additional control over the tuning of the modes with the metal, and achieving stronger… ▽ More Dielectric nanoresonators have been shown to circumvent the heavy optical losses associated with plasmonic devices, however they suffer from less confined resonances. By constructing a hybrid system of both dielectric and metallic materials, one can retain the low losses of dielectric resonances, whilst gaining additional control over the tuning of the modes with the metal, and achieving stronger mode confinement. In particular, multi-layered van der Waals materials are emerging as promising candidates for integration with metals owing to their weak attractive forces, which enable deposition onto such substrates without the requirement of lattice matching. Here we use layered, high refractive index WS$_2$ exfoliated on gold, to fabricate and optically characterize a hybrid nanoantenna-on-gold system. We experimentally observe a hybridization of Mie resonances, Fabry-Pérot modes, and surface plasmon-polaritons launched from the nanoantennas into the substrate. We achieve experimental quality factors of Mie-plasmonic modes of up to 20 times that of Mie resonances in nanoantennas on silica, and observe signatures of a supercavity mode with a Q factor of 263 $\pm$ 28, resulting from strong mode coupling between a higher-order anapole and Fabry-Pérot-plasmonic mode. We further simulate WS$_2$ nanoantennas on gold with an hBN spacer, resulting in calculated electric field enhancements exceeding 2600, and a Purcell factor of 713. Our results demonstrate dramatic changes in the optical response of dielectric nanophotonic structures placed on gold, opening new possibilities for nanophotonics and sensing with simple-to-fabricate devices. △ Less

Submitted 3 May, 2023; v1 submitted 5 April, 2023; originally announced April 2023.

Comments: 21 + 11 pages, 5 + 7 figures

Understanding the impact of heavy ions and tailoring the optical properties of large-area Monolayer WS2 using Focused Ion Beam

Authors: Fahrettin Sarcan, Nicola J. Fairbairn, Panaiot Zotev, Toby Severs-Millard, Daniel Gillard, Xiaochen Wang, Ben Conran, Michael Heuken, Ayse Erol, Alexander I. Tartakovskii, Thomas F. Krauss, Gordon J. Hedley, Yue Wang

Abstract: Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides (TMDCs), providing desirable properties in TMDC-based optoelectronic devices. However, the damage caused by the FIB irradiation and milling process to these delica… ▽ More Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides (TMDCs), providing desirable properties in TMDC-based optoelectronic devices. However, the damage caused by the FIB irradiation and milling process to these delicate atomically thin materials, especially in the extended area, has not yet been elaboratively characterised. Understanding the correlation between lateral ion beam effects and optical properties of 2D TMDCs is crucial in designing and fabricating high-performance optoelectronic devices. In this work, we investigate lateral damage in large-area monolayer WS2 caused by the gallium focused ion beam milling process. Three distinct zones away from the milling location are identified and characterised via steady-state photoluminescence (PL) and Raman spectroscopy. An unexpected bright ring-shaped emission around the milled location has been revealed by time-resolved PL spectroscopy with high spatial resolution. Our finding opens new avenues for tailoring the optical properties of TMDCs by charge and defect engineering via focused ion beam lithography. Furthermore, our study provides evidence that while some localised damage is inevitable, distant destruction can be eliminated by reducing the ion beam current. It paves the way for the use of FIB to create nanostructures in 2D TMDCs, as well as the design and realisation of optoelectrical devices on a wafer scale. △ Less

Submitted 9 October, 2022; originally announced October 2022.

Van der Waals Materials for Applications in Nanophotonics

Authors: Panaiot G. Zotev, Yue Wang, Daniel Andres-Penares, Toby Severs Millard, Sam Randerson, Xuerong Hu, Luca Sortino, Charalambos Louca, Mauro Brotons-Gisbert, Tahiyat Huq, Stefano Vezzoli, Riccardo Sapienza, Thomas F. Krauss, Brian Gerardot, Alexander I. Tartakovskii

Abstract: Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called v… ▽ More Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials. △ Less

Submitted 31 October, 2022; v1 submitted 12 August, 2022; originally announced August 2022.

Journal ref: Laser and Photonics Reviews 2023 17(8), 2200957

Nonlinear interactions of dipolar excitons and polaritons in MoS2 bilayers

Authors: Charalambos Louca, Armando Genco, Salvatore Chiavazzo, Thomas P. Lyons, Sam Randerson, Chiara Trovatello, Peter Claronino, Rahul Jayaprakash, Kenji Watanabe, Takashi Taniguchi, Stefano Dal Conte, David G. Lidzey, Giulio Cerullo, Oleksandr Kyriienko, Alexander I. Tartakovskii

Abstract: Nonlinear interactions between excitons strongly coupled to light are key for accessing quantum many-body phenomena in polariton systems. Atomically-thin two-dimensional semiconductors provide an attractive platform for strong light-matter coupling owing to many controllable excitonic degrees of freedom. Among these, the recently emerged exciton hybridization opens access to unexplored excitonic s… ▽ More Nonlinear interactions between excitons strongly coupled to light are key for accessing quantum many-body phenomena in polariton systems. Atomically-thin two-dimensional semiconductors provide an attractive platform for strong light-matter coupling owing to many controllable excitonic degrees of freedom. Among these, the recently emerged exciton hybridization opens access to unexplored excitonic species, with a promise of enhanced interactions. Here, we employ hybridized interlayer excitons (hIX) in bilayer MoS2 to achieve highly nonlinear excitonic and polaritonic effects. Such interlayer excitons possess an out-of-plane electric dipole as well as an unusually large oscillator strength allowing observation of dipolar polaritons(dipolaritons) in bilayers in optical microcavities. Compared to excitons and polaritons in MoS2 monolayers, both hIX and dipolaritons exhibit about 8 times higher nonlinearity, which is further strongly enhanced when hIX and intralayer excitons, sharing the same valence band, are excited simultaneously. This gives rise to a highly nonlinear regime which we describe theoretically by introducing a concept of hole crowding. The presented insight into many-body interactions provides new tools for accessing few-polariton quantum correlations. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Transition metal dichalcogenide dimer nano-antennas with ultra-small gaps

Authors: Panaiot G. Zotev, Yue Wang, Luca Sortino, Toby Severs Millard, Nic Mullin, Donato Conteduca, Mostafa Shagar, Armando Genco, Jamie K. Hobbs, Thomas F. Krauss, Alexander I. Tartakovskii

Abstract: Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structu… ▽ More Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe$_2$ monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240. We introduce post-fabrication atomic force microscope repositioning and rotation of dimer nano-antennas, achieving gaps as small as 10$\pm$5 nm, opening the possibility to a host of potential applications including strong Purcell enhancement of single photon emitters and optical trapping, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nano-photonics by exploring new applications enabled by their unique properties. △ Less

Submitted 2 December, 2021; v1 submitted 19 May, 2021; originally announced May 2021.

Journal ref: ACS Nano 2022 16(4), 6493-6505

Strong Exciton-Photon Coupling in Large Area MoSe$_2$ and WSe$_2$ Heterostructures Fabricated from Two-Dimensional Materials Grown by Chemical Vapor Deposition

Authors: Daniel J. Gillard, Armando Genco, Seongjoon Ahn, Thomas P. Lyons, Kyung Yeol Ma, A-Rang Jang, Toby Severs Millard, Aurelien A. P. Trichet, Rahul Jayaprakash, Kyriacos Georgiou, David G. Lidzey, Jason M. Smith, Hyeon Suk Shin, Alexander I. Tartakovskii

Abstract: Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabricati… ▽ More Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabrication of two-dimensional materials and their heterostructures. Chemical vapor deposition offers an alternative scalable fabrication method for both monolayer semiconductors and other two-dimensional materials, such as hexagonal boron nitride. Observation of the strong light-matter coupling in chemical vapor grown transition metal dichalcogenides has been demonstrated so far in a handful of experiments with monolayer molybdenum disulfide and tungsten disulfide. Here we instead demonstrate the strong exciton-photon coupling in microcavities comprising large area transition metal dichalcogenide / hexagonal boron nitride heterostructures made from chemical vapor deposition grown molybdenum diselenide and tungsten diselenide encapsulated on one or both sides in continuous few-layer boron nitride films also grown by chemical vapor deposition. These transition metal dichalcogenide / hexagonal boron nitride heterostructures show high optical quality comparable with mechanically exfoliated samples, allowing operation in the strong coupling regime in a wide range of temperatures down to 4 Kelvin in tunable and monolithic microcavities, and demonstrating the possibility to successfully develop large area transition metal dichalcogenide based polariton devices. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Emergence of highly linearly polarized interlayer exciton emission in MoSe$_2$/WSe$_2$ heterobilayers with transfer-induced layer corrugation

Authors: Evgeny M. Alexeev, Nic Mullin, Pablo Ares, Harriet Nevison-Andrews, Oleksandr V. Skrypka, Tillmann Godde, Aleksey Kozikov, Lee Hague, Yibo Wang, Kostya S. Novoselov, Laura Fumagalli, Jamie K. Hobbs, Alexander I. Tartakovskii

Abstract: The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional mate… ▽ More The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering. △ Less

Submitted 12 April, 2020; originally announced April 2020.

Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities

Authors: O. Del Pozo-Zamudio, A. Genco, S. Schwarz, F. Withers, P. M. Walker, T. Godde, R. C. Schofield, A. P. Rooney, E. Prestat, K. Watanabe, T. Taniguchi, C. Clark, S. J. Haigh, D. N. Krizhanovskii, K. S. Novoselov, A. I. Tartakovskii

Abstract: Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integr… ▽ More Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures. △ Less

Submitted 4 June, 2020; v1 submitted 15 November, 2019; originally announced November 2019.

Journal ref: O. Del Pozo-Zamudio et al. 2D materials 7 (2020) 3, 031006

Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging

Authors: T. Severs Millard, A. Genco, E. M. Alexeev, S. Randerson, S. Ahn, A. Jang, H. S. Shin, A. I. Tartakovskii

Abstract: CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to… ▽ More CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of semiconducting TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to 20x magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm x 5.0 mm in size, and MoSe2-WS2 on SiO2/Si, 11.2 mm x 5.8 mm in size. For the latter sample 100,245 objects were identified and their properties measured, with an orientation extracted from 27,779 objects that displayed a triangular morphology. In the substrates studied, two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications. △ Less

Submitted 9 November, 2019; originally announced November 2019.

Comments: 32 pages including Supplementary Information, 6 figures

Journal ref: npj 2D Materials and Applications 4, Article number: 12 (2020)

Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas

Authors: L. Sortino, P. G. Zotev, S. Mignuzzi, J. Cambiasso, D. Schmidt, A. Genco, M. Aßmann, M. Bayer, S. A. Maier, R. Sapienza, A. I. Tartakovskii

Abstract: Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we… ▽ More Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe$_2$. We observe a photoluminescence enhancement exceeding 10$^4$ compared with WSe$_2$ placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10$^3$. Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors. △ Less

Submitted 11 November, 2019; v1 submitted 20 June, 2019; originally announced June 2019.

Comments: peer-reviewed version (9 pages main text, 4 Figures) with supporting information (7 pages, 6 Figures)

Journal ref: Nature Communications Volume 10, Article number: 5119 (2019)

Nonlinear polaritons in monolayer semiconductor coupled to optical bound states in the continuum

Authors: V. Kravtsov, E. Khestanova, F. A. Benimetskiy, T. Ivanova, A. K. Samusev, I. S. Sinev, D. Pidgayko, A. M. Mozharov, I. S. Mukhin, M. S. Lozhkin, Y. V. Kapitonov, A. S. Brichkin, V. D. Kulakovskii, I. A. Shelykh, A. I. Tartakovskii, P. M. Walker, M. S. Skolnick, D. N. Krizhanovskii, I. V. Iorsh

Abstract: Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in such systems is particularly promising for enhancement of nonlinear optical processes and development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical… ▽ More Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in such systems is particularly promising for enhancement of nonlinear optical processes and development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical BICs. Here, we mix optical BIC in a photonic crystal slab with excitons in atomically thin semiconductor MoSe$_2$ to form nonlinear exciton-polaritons with a Rabi splitting of 27~meV, exhibiting large interaction-induced spectral blueshifts. The asymptotic BIC-like suppression of polariton radiation into far-field towards the BIC wavevector, in combination with effective reduction of excitonic disorder through motional narrowing, results in small polariton linewidths below 3~meV. Together with strongly wavevector-dependent Q-factor, this provides for enhancement and control of polariton--polariton interactions and resulting nonlinear optical effects, paving the way towards tunable BIC-based polaritonic devices for sensing, lasing, and nonlinear optics. △ Less

Submitted 9 October, 2019; v1 submitted 31 May, 2019; originally announced May 2019.

Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures

Authors: Evgeny M. Alexeev, David A. Ruiz-Tijerina, Mark Danovich, Matthew J. Hamer, Daniel J. Terry, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Maciej R. Molas, Maciej Koperski, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Roman V. Gorbachev, Hyeon Suk Shin, Vladimir I. Fal'ko, Alexander I. Tartakovskii

Abstract: Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu… ▽ More Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Comments: 43 pages, 14 figures, includes supplementary information

Journal ref: Nature 567, 81 (2019)

Strong-coupling of WSe2 in ultra-compact plasmonic nanocavities at room temperature

Authors: Marie-Elena Kleemann, Rohit Chikkaraddy, Evgeny M. Alexeev, Dean Kos, Cloudy Carnegie, Will Deacon, Alex de Casalis de Pury, Christoph Grosse, Bart de Nijs, Jan Mertens, Alexander I Tartakovskii, Jeremy J Baumberg

Abstract: Strong-coupling of monolayer metal dichalcogenide semiconductors with light offers encouraging prospects for realistic exciton devices at room temperature. However, the nature of this coupling depends extremely sensitively on the optical confinement and the orientation of electronic dipoles and fields. Here, we show how plasmon strong coupling can be achieved in compact robust easily-assembled gol… ▽ More Strong-coupling of monolayer metal dichalcogenide semiconductors with light offers encouraging prospects for realistic exciton devices at room temperature. However, the nature of this coupling depends extremely sensitively on the optical confinement and the orientation of electronic dipoles and fields. Here, we show how plasmon strong coupling can be achieved in compact robust easily-assembled gold nano-gap resonators at room temperature. We prove that strong coupling is impossible with monolayers due to the large exciton coherence size, but resolve clear anti-crossings for 8 layer devices with Rabi splittings exceeding 135 meV. We show that such structures improve on prospects for nonlinear exciton functionalities by at least 10^4, while retaining quantum efficiencies above 50%. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope

Authors: Evgeny M. Alexeev, Alessandro Catanzaro, Oleksandr V. Skrypka, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Kostya S. Novoselov, Hyeon Suk Shin, Alexander I. Tartakovskii

Abstract: Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influenc… ▽ More Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here to identify mono- and few-layer crystals, and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in mechanically exfoliated flakes as well as a function of the twist angle in atomic layers grown by chemical vapour deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterisation of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth. △ Less

Submitted 1 May, 2017; v1 submitted 23 December, 2016; originally announced December 2016.

Comments: 24 pages, 5 figures

Electrically pumped single-defect light emitters in WSe$_2$

Authors: S. Schwarz, A. Kozikov, F. Withers, J. K. Maguire, A. P. Foster, S. Dufferwiel, L. Hague, M. N. Makhonin, L. R. Wilson, A . K. Geim, K. S. Novoselov, A. I. Tartakovskii

Abstract: Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects… ▽ More Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics. △ Less

Submitted 6 May, 2016; originally announced May 2016.

Journal ref: 2D Mater. 3 (2016) 025038

Two-dimensional metal-chalcogenide films in tunable optical microcavities

Authors: S. Schwarz, S. Dufferwiel, P. M. Walker, F. Withers, A. A. P. Trichet, M. Sich, F. Li, E. A. Chekhovich, D. N. Borisenko, N. N. Kolesnikov, K. S. Novoselov, M. S. Skolnick, J. M Smith, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here… ▽ More Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals. △ Less

Submitted 15 August, 2014; originally announced August 2014.

Journal ref: Nano Lett., 14, 7003, 2014

Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

Authors: Ceyhun Bulutay, E. A. Chekhovich, A. I. Tartakovskii

Abstract: A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational s… ▽ More A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational study of the recently introduced inverse spectra nuclear magnetic resonance technique to assess its suitability for extracting such structural information. We observe marked spectral differences between the compound InAs and alloy InGaAs QDs. These are linked to the local biaxial and shear strains, and the local bonding configurations. The cation-alloying plays a crucial role especially for the arsenic nuclei. The isotopic line profiles also largely differ among nuclear species: While the central transition of the gallium isotopes have a narrow linewidth, those of arsenic and indium are much broader and oppositely skewed with respect to each other. The statistical distributions of electric field gradient (EFG) parameters of the nuclei within the QD are analyzed. The consequences of various EFG axial orientation characteristics are discussed. Finally, the possibility of suppressing the first-order quadrupolar shifts is demonstrated by simply tilting the sample with respect to the static magnetic field. △ Less

Submitted 20 November, 2014; v1 submitted 2 August, 2014; originally announced August 2014.

Comments: Published version, 17 pages, 18 figures

Journal ref: Phys. Rev. B 90, 205425 (2014)

The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

Authors: D. O. Kundys, P. Murzyn, J. P. R. Wells, A. I. Tartakovskii, M. S. Skolnick, Le Si Dang, E. V. Lutsenko, N. P. Tarasuk, O. G. Lyublinskaya, A. A. Toropov, S. V. Ivanov

Abstract: We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 4… ▽ More We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample. △ Less

Submitted 17 January, 2014; originally announced January 2014.

Journal ref: Journal of Applied Physics 100, 123510 (2006)