Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
Authors:
Gianluca Aglieri Rinella,
Luca Aglietta,
Matias Antonelli,
Francesco Barile,
Franco Benotto,
Stefania Maria Beolè,
Elena Botta,
Giuseppe Eugenio Bruno,
Francesca Carnesecchi,
Domenico Colella,
Angelo Colelli,
Giacomo Contin,
Giuseppe De Robertis,
Florina Dumitrache,
Domenico Elia,
Chiara Ferrero,
Martin Fransen,
Alex Kluge,
Shyam Kumar,
Corentin Lemoine,
Francesco Licciulli,
Bong-Hwi Lim,
Flavio Loddo,
Magnus Mager,
Davide Marras
, et al. (21 additional authors not shown)
Abstract:
In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a sm…
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In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. Several variants of this chip with different pixel designs have been characterized with a (120 GeV/$c$) positive hadron beam. This result indicates that the APTS-OA prototype variants with the best performance achieve a time resolution of 63 ps with a detection efficiency exceeding 99% and a spatial resolution of 2 $μ$m, highlighting the potential of TPSCo 65nm CMOS imaging technology for high-energy physics and other fields requiring precise time measurement, high detection efficiency, and excellent spatial resolution.
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Submitted 26 July, 2024;
originally announced July 2024.
Characterization of LAPPD timing at CERN PS testbeam
Authors:
Deb Sankar Bhattacharya,
Andrea Bressan,
Chandradoy Chatterjee,
Silvia Dalla Torre,
Mauro Gregori,
Alexander Kiselev,
Stefano Levorato,
Anna Martin,
Saverio Minutoli,
Mikhail Osipenko,
Richa Rai,
Marco Ripani,
Fulvio Tessarotto,
Triloki Triloki
Abstract:
Large Area Picosecond PhotoDetectors (LAPPDs) are photosensors based on microchannel plate technology with about 400 cm$^2$ sensitive area. The external readout plane of a capacitively coupled LAPPD can be segmented into pads providing a spatial resolution down to 1 mm scale. The LAPPD signals have about 0.5 ns risetime followed by a slightly longer falltime and their amplitude reaches a few dozen…
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Large Area Picosecond PhotoDetectors (LAPPDs) are photosensors based on microchannel plate technology with about 400 cm$^2$ sensitive area. The external readout plane of a capacitively coupled LAPPD can be segmented into pads providing a spatial resolution down to 1 mm scale. The LAPPD signals have about 0.5 ns risetime followed by a slightly longer falltime and their amplitude reaches a few dozens of mV per single photoelectron. In this article, we report on the measurement of the time resolution of an LAPPD prototype in a test beam exercise at CERN PS. Most of the previous measurements of LAPPD time resolution had been performed with laser sources. In this article we report time resolution measurements obtained through the detection of Cherenkov radiation emitted by high energy hadrons. Our approach has been demonstrated capable of measuring time resolutions as fine as 25-30 ps. The available prototype had performance limitations, which prevented us from applying the optimal high voltage setting. The measured time resolution for single photoelectrons is about 80 ps r.m.s.
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Submitted 26 September, 2023;
originally announced September 2023.
