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Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Authors:
Yiyu Zhang,
Dasari Venkatakrishnarao,
Michel Bosman,
Wei Fu,
Sarthak Das,
Fabio Bussolotti,
Rainer Lee,
Siew Lang Teo,
Ding Huang,
Ivan Verzhbitskiy,
Zhuojun Jiang,
Zhuoling Jiang,
Jian Wei Chai,
Shi Wun Tong,
Zi-En Ooi,
Calvin Pei Yu Wong,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,…
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Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics.
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Submitted 25 October, 2022;
originally announced October 2022.
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Miniaturizing Color-Sensitive Photodetectors via Hybrid Nanoantennas towards Sub-micron Dimensions
Authors:
Jinfa Ho,
Zhaogang Dong,
Hai Sheng Leong,
Jun Zhang,
Febiana Tjiptoharsono,
Soroosh Daqiqeh Rezaei,
Ken Choon Hwa Goh,
Mengfei Wu,
Shiqiang Li,
Jingyee Chee,
Calvin Pei Yu Wong,
Arseniy I. Kuznetsov,
Joel K. W. Yang
Abstract:
Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the minimum pixel size. In this paper, we report hybrid silicon-aluminum nanostructures in the extreme limit of zero distance between color filters and sensors. This des…
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Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the minimum pixel size. In this paper, we report hybrid silicon-aluminum nanostructures in the extreme limit of zero distance between color filters and sensors. This design could essentially achieve sub micron pixel dimensions and minimize the optical cross-talk originated from tilt illuminations. The designed hybrid silicon-aluminum nanostructure has dual functionalities. Crucially, it supports a hybrid Mie-plasmon resonance of magnetic dipole to achieve the color-selective light absorption, generating electron hole pairs. Simultaneously, the silicon-aluminum interface forms a Schottky barrier for charge separation and photodetection. This design could potentially replace the traditional dye based filters for camera sensors at ultra-high pixel densities with advanced functionalities in sensing polarization and directionality, as well as UV selectivity via interband plasmons of silicon.
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Submitted 7 June, 2022;
originally announced June 2022.
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A Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky Barrier Devices
Authors:
Calvin Pei Yu Wong,
Cedric Troadec,
Andrew T. S. Wee,
Kuan Eng Johnson Goh
Abstract:
Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interface inhomogeneity as most techniques average over the spot-area of the analytical tool, or the entire device measured for electrical I-V measurements. Commonly used models to extract Schottky barrier heights (SBH) neglec…
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Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interface inhomogeneity as most techniques average over the spot-area of the analytical tool, or the entire device measured for electrical I-V measurements. Commonly used models to extract Schottky barrier heights (SBH) neglect or fail to account for such inhomogeneities, which can lead to the extraction of incorrect SBH and Richardson constants. Here, we show that a gaussian modified thermionic emission model gives the best fit to experimental I-V-T data of van der Waals Au/p-MoS2 interfaces and allow the deconvolution of the SBH of the defective regions from the pristine region. By the inclusion of a gaussian distributed SBH in the macroscopic I-V-T analysis, we demonstrate that interface inhomogeneities due to defects are deconvoluted and well correlated to the impact on the device behavior across a wide temperature range from room temperature of 300 K down to 120 K. We verified the gaussian thermionic model across two different types of p-MoS2 (geological and synthetic), and finally compared the macroscopic SBH with the results of a nanoscopic technique, ballistic hole emission microscopy (BHEM). The results obtained using BHEM were consistent with the pristine Au/p-MoS2 SBH extracted from the gaussian modified thermionic emission model over hundreds of nanometers. Our findings show that the inclusion of Schottky barrier inhomogeneities in the analysis of I-V-T data is important to elucidate the impact of defects (e.g. grain boundaries, metallic impurities, etc.) and hence their influence on device behavior. We also find that the Richardson constant, a material specific constant typically treated as merely a fitting constant, is an important parameter to check for the validity of the transport model.
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Submitted 10 August, 2020;
originally announced August 2020.
