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Cavity-Enhanced Emission and Absorption of Color Centers in a Diamond Membrane With Selectable Strain
Authors:
Robert Berghaus,
Selene Sachero,
Gregor Bayer,
Julia Heupel,
Tobias Herzig,
Florian Feuchtmayr,
Jan Meijer,
Cyril Popov,
Alexander Kubanek
Abstract:
Group IV color centers in diamond are among the most promising optically active spin systems with strong optical transitions and long spin coherences. The ground-state splitting of the center is particularly important to suppress the interaction with coherence-limiting phonons, which improves the coherence properties and sets the upper limit for the operating temperature. Negatively charged silico…
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Group IV color centers in diamond are among the most promising optically active spin systems with strong optical transitions and long spin coherences. The ground-state splitting of the center is particularly important to suppress the interaction with coherence-limiting phonons, which improves the coherence properties and sets the upper limit for the operating temperature. Negatively charged silicon-vacancy centers have an ordinary ground-state splitting of only 48GHz, resulting in required temperatures below one Kelvin, which can only be achieved by dilution refrigerators. Here, we increase the ground-state splitting by up to an order of magnitude by induced strain in a single-crystal diamond membrane. Furthermore, we demonstrate cavity-assisted spectroscopy enabled by coupling the emitter ensemble with a selectable strain to the mode of a Fabry-Perot microcavity. Calculation of the absorption cross-section yields $σ_{ens} = $4.9*10^-11 cm^2. Together with the Purcell-enhanced twofold reduction in emitter lifetime below 1ns, this makes the system a promising spin-photon interface at moderate temperatures of 4K.
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Submitted 30 May, 2024;
originally announced May 2024.
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Hopping of the center-of-mass of single G centers in silicon-on-insulator
Authors:
Alrik Durand,
Yoann Baron,
Péter Udvarhelyi,
Félix Cache,
Krithika V. R.,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Jean-Michel Hartmann,
Shay Reboh,
Marco Abbarchi,
Isabelle Robert-Philip,
Adam Gali,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this a…
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Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.
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Submitted 23 April, 2024;
originally announced April 2024.
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Microwave Control of the Tin-Vacancy Spin Qubit in Diamond with a Superconducting Waveguide
Authors:
Ioannis Karapatzakis,
Jeremias Resch,
Marcel Schrodin,
Philipp Fuchs,
Michael Kieschnick,
Julia Heupel,
Luis Kussi,
Christoph Sürgers,
Cyril Popov,
Jan Meijer,
Christoph Becher,
Wolfgang Wernsdorfer,
David Hunger
Abstract:
Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin contr…
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Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin control are suppressed, and strain is necessary to enable these transitions. Recent work has shown spin control of strained emitters using microwave lines that suffer from Ohmic losses, restricting coherence through heating. We utilize a superconducting coplanar waveguide to measure SnV centers subjected to strain, observing substantial improvement. A detailed analysis of the SnV center electron spin Hamiltonian based on the angle-dependent splitting of the ground and excited states is performed. We demonstrate coherent spin manipulation and obtain a Hahn echo coherence time of up to $T_2 = 430\,μ$s. With dynamical decoupling, we can prolong coherence to $T_2 = 10\,$ms, about six-fold improved compared to earlier works. We also observe a nearby coupling $^{13}\mathrm{C}$ spin which may serve as a quantum memory. This substantiates the potential of SnV centers in diamond and demonstrates the benefit of superconducting microwave structures.
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Submitted 1 March, 2024;
originally announced March 2024.
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Genuine and faux single G centers in carbon-implanted silicon
Authors:
Alrik Durand,
Yoann Baron,
Félix Cache,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Jean-Michel Hartmann,
Shay Reboh,
Marco Abbarchi,
Isabelle Robert-Philip,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 μ$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative…
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Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 μ$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.
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Submitted 12 February, 2024;
originally announced February 2024.
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Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates
Authors:
Hugo Quard,
Mario Khoury,
Andong Wang,
Tobias Herzig,
Jan Meijer,
Sebastian Pezzagna,
Sébastien Cueff,
David Grojo,
Marco Abbarchi,
Hai Son Nguyen,
Nicolas Chauvin,
Thomas Wood
Abstract:
The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters…
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The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters obtained with conventional implant processes; as quantified by the photoluminescence radiative lifetime, the broadening of their zero-phonon line (ZPL) and the evolution of these quantities with temperature. In addition to this, we show that both defects can be created without carbon implantation and that we can erase the G-centers by annealing while enhancing the W-centers' emission. These demonstrations are relevant to the deterministic and operando generation of quantum emitters in silicon.
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Submitted 7 April, 2023;
originally announced April 2023.
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Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
Authors:
B. Lefaucher,
J. -B. Jager,
V. Calvo,
A. Durand,
Y. Baron,
F. Cache,
V. Jacques,
I. Robert-Philip,
G. Cassabois,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Khoury,
M. Abbarchi,
A. Dréau,
J. -M. Gérard
Abstract:
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wi…
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We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G centers emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda over n)^3. The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G centers dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease of the average lifetime of the G centers, which points at a low radiative yield (<10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon, and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single photon sources for integrated quantum photonics.
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Submitted 11 October, 2022;
originally announced October 2022.
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Microscopic-scale recording of brain neuronal electrical activity using a diamond quantum sensor
Authors:
Nikolaj Winther Hansen,
James Luke Webb,
Luca Troise,
Christoffer Olsson,
Leo Tomasevic,
Ovidiu Brinza,
Jocelyn Achard,
Robert Staacke,
Michael Kieschnick,
Jan Meijer,
Axel Thielscher,
Hartwig Roman Siebner,
Kirstine Berg-Sørensen,
Jean-François Perrier,
Alexander Huck,
Ulrik Lund Andersen
Abstract:
An important tool in the investigation of the early stages of neurodegenerative disease is the study of dissected living tissue from the brain of an animal model. Such investigations allow the physical structure of individual neurons and neural circuits to be probed alongside neuronal electrical activity, disruption of which can shed light on the mechanisms of emergence of disease. Existing techni…
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An important tool in the investigation of the early stages of neurodegenerative disease is the study of dissected living tissue from the brain of an animal model. Such investigations allow the physical structure of individual neurons and neural circuits to be probed alongside neuronal electrical activity, disruption of which can shed light on the mechanisms of emergence of disease. Existing techniques for recording activity rely on potentially damaging direct interaction with the sample, either mechanically as point electrical probes or via intense focused laser light combined with highly specific genetic modification and/or potentially toxic fluorescent dyes. In this work, we instead perform passive, microscopic-scale recording of electrical activity using a biocompatible quantum sensor based on colour centres in diamond. We record biomagnetic field induced by ionic currents in mouse corpus callosum axons without direct sample interaction, accurately recovering signals corresponding to action potential propagation while demonstrating in situ pharmacology during biomagnetic recording through tetrodotoxin inhibition of voltage gated sodium channels. Our results open a promising new avenue for the microscopic recording of neuronal signals, offering the prospect of high resolution imaging of electrical circuits in the living mammalian brain.
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Submitted 30 August, 2022;
originally announced August 2022.
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Single G centers in silicon fabricated by co-implantation with carbon and proton
Authors:
Yoann Baron,
Alrik Durand,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Isabelle Robert-Philip,
Marco Abbarchi,
Jean-Michel Hartmann,
Shay Reboh,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, rea…
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We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $μ$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.
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Submitted 28 April, 2022;
originally announced April 2022.
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Laser stimulation of muscle activity with simultaneous detection using a diamond colour centre biosensor
Authors:
Luca Troise,
Nikolaj Winther Hansen,
Christoffer Olsson,
James Luke Webb,
Leo Tomasevic,
Jocelyn Achard,
Ovidiu Brinza,
Robert Staacke,
Michael Kieschnick,
Jan Meijer,
Axel Thielscher,
Hartwig Roman Siebner,
Kirstine Berg-Sørensen,
Jean-François Perrier,
Alexander Huck,
Ulrik Lund Andersen
Abstract:
The detection of physiological activity at the microscopic level is key for understanding the function of biosystems and relating this to physical structure. Current sensing methods often rely on invasive probes to stimulate and detect activity, bearing the risk of inducing damage in the target system. In recent years, a new type of biosensor based on color centers in diamond offers the possibilit…
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The detection of physiological activity at the microscopic level is key for understanding the function of biosystems and relating this to physical structure. Current sensing methods often rely on invasive probes to stimulate and detect activity, bearing the risk of inducing damage in the target system. In recent years, a new type of biosensor based on color centers in diamond offers the possibility to passively, noninvasively sense and image living biological systems. Here, we use such a sensor for the \textit{in-vitro} recording of the local magnetic field generated by tightly focused, high intensity pulsed laser optogenetic neuromuscular stimulation of the extensor digitorum longus muscles. Recordings captured a compound action potential response and a slow signal component which we seek to explain using a detailed model of the biological system. We show that our sensor is capable of recording localized neuromuscular activity from the laser stimulation site without photovoltaic or fluorescence artifacts associated with alternative techniques. Our work represents an important step towards selective induction of localized neurobiological activity while performing passive sensing and imaging with diamond sensors, motivating further research into mapping of neural activity and intra-cellular processes.
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Submitted 17 December, 2021;
originally announced December 2021.
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Detection of single W-centers in silicon
Authors:
Yoann Baron,
Alrik Durand,
Péter Udvarhelyi,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Isabelle Robert-Philip,
Marco Abbarchi,
Jean-Michel Hartmann,
Vincent Mazzocchi,
Jean-Michel Gérard,
Adam Gali,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial compl…
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Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218$μ$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.
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Submitted 28 April, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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High speed microcircuit and synthetic biosignal widefield imaging using nitrogen vacancies in diamond
Authors:
James L. Webb,
Luca Troise,
Nikolaj W. Hansen,
Louise F. Frellsen,
Christian Osterkamp,
Fedor Jelezko,
Steffen Jankuhn,
Jan Meijer,
Kirstine Berg-Sørensen,
Jean-François Perrier,
Alexander Huck,
Ulrik Lund Andersen
Abstract:
The ability to measure the passage of electrical current with high spatial and temporal resolution is vital for applications ranging from inspection of microscopic electronic circuits to biosensing. Being able to image such signals passively and remotely at the same time is of high importance, to measure without invasive disruption of the system under study or the signal itself. A new approach to…
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The ability to measure the passage of electrical current with high spatial and temporal resolution is vital for applications ranging from inspection of microscopic electronic circuits to biosensing. Being able to image such signals passively and remotely at the same time is of high importance, to measure without invasive disruption of the system under study or the signal itself. A new approach to achieve this utilises point defects in solid state materials, in particular nitrogen vacancy (NV) centres in diamond. Acting as a high density array of independent sensors, addressable opto-electronically and highly sensitive to factors including temperature and magnetic field, these are ideally suited to microscopic widefield imaging. In this work we demonstrate such imaging of signals from a microscopic lithographically patterned circuit at the micrometer scale. Using a new type of lock-in amplifier camera, we demonstrate sub-millisecond (up to 3500 frames-per-second) spatially resolved recovery of AC and pulsed electrical current signals, without aliasing or undersampling. Finally, we demonstrate as a proof of principle the recovery of synthetic signals replicating the exact form of signals in a biological neural network: the hippocampus of a mouse.
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Submitted 29 July, 2021;
originally announced July 2021.
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Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization
Authors:
Emilio Corte,
Selene Sachero,
Sviatoslav Ditalia Tchernij,
Tobias Lühmann,
Sébastien Pezzagna,
Paolo Traina,
Ivo Pietro Degiovanni,
Ekaterina Moreva,
Paolo Olivero,
Jan Meijer,
Marco Genovese,
Jacopo Forneris
Abstract:
We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative…
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We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters.
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Submitted 14 June, 2021;
originally announced June 2021.
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Spectral features of Pb-related color centers in diamond
Authors:
Sviatoslav Ditalia Tchernij,
Emilio Corte,
Tobias Lühmann,
Paolo Traina,
Sébastien Pezzagna,
Ivo Pietro Degiovanni,
Georgios Provatas,
Ekaterina Moreva,
Jan Meijer,
Paolo Olivero,
Marco Genovese,
Jacopo Forneris
Abstract:
We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated…
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We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies.
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Submitted 2 June, 2021;
originally announced June 2021.
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A cavity-based optical antenna for color centers in diamond
Authors:
Philipp Fuchs,
Thomas Jung,
Michael Kieschnick,
Jan Meijer,
Christoph Becher
Abstract:
An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mi…
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An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mirrors coated on a thin single crystal diamond membrane, forming a planar Fabry-Pérot cavity that improves the photon extraction from single tin vacancy (SnV) centers as well as their coupling to an excitation laser. Upon numerical optimization of the structure, we find theoretical enhancements in the collectible photon rate by a factor of 60 as compared to the bulk case. As a proof-of-principle demonstration, we fabricate single crystal diamond membranes with sub-$μ$m thickness and create SnV centers by ion implantation. Employing off-resonant excitation, we show a 6-fold enhancement of the collectible photon rate, yielding up to half a million photons per second from a single SnV center. At the same time, we observe a significant reduction of the required excitation power in accordance with theory, demonstrating the functionality of the cavity as an optical antenna. Due to its planar design, the antenna simultaneously provides similar enhancements for a large number of emitters inside the membrane. Furthermore, the monolithic structure provides high mechanical stability and straightforwardly enables operation under cryogenic conditions as required in most spin-photon interface implementations.
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Submitted 21 May, 2021;
originally announced May 2021.
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Laser threshold magnetometry using green light absorption by diamond nitrogen vacancies in an external cavity laser
Authors:
James L. Webb,
Andreas F. L. Poulsen,
Robert Staacke,
Jan Meijer,
Kirstine Berg-Sørensen,
Ulrik Lund Andersen,
Alexander Huck
Abstract:
Nitrogen vacancy (NV) centers in diamond have attracted considerable recent interest for use in quantum sensing, promising increased sensitivity for applications ranging from geophysics to biomedicine. Conventional sensing schemes involve monitoring the change in red fluorescence from the NV center under green laser and microwave illumination. Due to the strong fluorescence background from emissio…
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Nitrogen vacancy (NV) centers in diamond have attracted considerable recent interest for use in quantum sensing, promising increased sensitivity for applications ranging from geophysics to biomedicine. Conventional sensing schemes involve monitoring the change in red fluorescence from the NV center under green laser and microwave illumination. Due to the strong fluorescence background from emission in the NV triplet state and low relative contrast of any change in output, sensitivity is severely restricted by a high optical shot noise level. Here, we propose a means to avoid this issue, by using the change in green pump absorption through the diamond as part of a semiconductor external cavity laser run close to lasing threshold. We show theoretical sensitivity to magnetic field on the pT/sqrt(Hz) level is possible using a diamond with an optimal density of NV centers. We discuss the physical requirements and limitations of the method, particularly the role of amplified spontaneous emission near threshold and explore realistic implementations using current technology.
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Submitted 22 January, 2021;
originally announced January 2021.
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Determining the position of a single spin relative to a metallic nanowire
Authors:
J. F. da Silva Barbosa,
M. Lee,
P. Campagne-Ibarcq,
P. Jamonneau,
Y. Kubo,
S. Pezzagna,
J. Meijer,
T. Teraji,
D. Vion,
D. Esteve,
R. W. Heeres,
P. Bertet
Abstract:
The nanoscale localization of individual paramagnetic defects near an electrical circuit is an important step for realizing hybrid quantum devices with strong spin-microwave photon coupling. Here, we demonstrate the fabrication of an array of individual NV centers in diamond near a metallic nanowire deposited on top of the substrate. We determine the relative position of each NV center with…
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The nanoscale localization of individual paramagnetic defects near an electrical circuit is an important step for realizing hybrid quantum devices with strong spin-microwave photon coupling. Here, we demonstrate the fabrication of an array of individual NV centers in diamond near a metallic nanowire deposited on top of the substrate. We determine the relative position of each NV center with $\sim$10\,nm accuracy, using it as a vector magnetometer to measure the field generated by passing a dc current through the wire.
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Submitted 19 November, 2020;
originally announced November 2020.
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Broad diversity of near-infrared single-photon emitters in silicon
Authors:
A. Durand,
Y. Baron,
W. Redjem,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
J. -M. Gérard,
I. Robert-Philip,
M. Abbarchi,
V. Jacques,
G. Cassabois,
A. Dréau
Abstract:
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse the…
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We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
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Submitted 23 October, 2020; v1 submitted 21 October, 2020;
originally announced October 2020.
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Fluorine-based color centers in diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
E. Corte,
F. Sardi,
F. Picollo,
P. Traina,
M. Brajkovic,
A. Crnjac,
S. Pezzagna,
I. P. Degiovanni,
E. Moreva,
P. Aprà,
P. Olivero,
Z. Siketić,
J. Meijer,
M. Genovese,
J. Forneris
Abstract:
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s…
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We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
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Submitted 9 December, 2020; v1 submitted 28 September, 2020;
originally announced September 2020.
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Detection of biological signals from a live mammalian muscle using a diamond quantum sensor
Authors:
James Luke Webb,
Luca Troise,
Nikolaj Winther Hansen,
Christoffer Olsson,
Adam Wojciechowski,
Jocelyn Achard,
Ovidiu Brinza,
Robert Staacke,
Michael Kieschnick,
Jan Meijer,
Axel Thielscher,
Jean-Francois Perrier,
Kirstine Berg-Sorensen,
Alexander Huck,
Ulrik Lund Andersen
Abstract:
The ability to perform noninvasive, non-contact measurements of electric signals produced by action potentials is essential in biomedicine. A key method to do this is to remotely sense signals by the magnetic field they induce. Existing methods for magnetic field sensing of mammalian tissue, used in techniques such as magnetoencephalography of the brain, require cryogenically cooled superconductin…
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The ability to perform noninvasive, non-contact measurements of electric signals produced by action potentials is essential in biomedicine. A key method to do this is to remotely sense signals by the magnetic field they induce. Existing methods for magnetic field sensing of mammalian tissue, used in techniques such as magnetoencephalography of the brain, require cryogenically cooled superconducting detectors. These have many disadvantages in terms of high cost, flexibility and limited portability as well as poor spatial and temporal resolution. In this work we demonstrate an alternative technique for detecting magnetic fields generated by the current from action potentials in living tissue using nitrogen vacancy centres in diamond. With 50pT/$\sqrt{Hz}$ sensitivity, we show the first measurements of sensing from mammalian tissue with a diamond sensor using mouse muscle optogenetically activated with blue light. We show these measurements can be performed in an ordinary, unshielded lab environment and that the signal can be easily recovered by digital signal processing techniques.
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Submitted 3 August, 2020;
originally announced August 2020.
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Robust All-Optical Single-Shot Readout of NV Centers in Diamond
Authors:
Dominik M. Irber,
Francesco Poggiali,
Fei Kong,
Michael Kieschnick,
Tobias Lühmann,
Damian Kwiatkowski,
Jan Meijer,
Jiangfeng Du,
Fazhan Shi,
Friedemann Reinhard
Abstract:
High-fidelity projective readout of a qubit's state in a single experimental repetition is a prerequisite for various quantum protocols of sensing and computing. Achieving single-shot readout is challenging for solid-state qubits. For Nitrogen-Vacancy (NV) centers in diamond, it has been realized using nuclear memories or resonant excitation at cryogenic temperature. All of these existing approach…
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High-fidelity projective readout of a qubit's state in a single experimental repetition is a prerequisite for various quantum protocols of sensing and computing. Achieving single-shot readout is challenging for solid-state qubits. For Nitrogen-Vacancy (NV) centers in diamond, it has been realized using nuclear memories or resonant excitation at cryogenic temperature. All of these existing approaches have stringent experimental demands. In particular, they require a high efficiency of photon collection, such as immersion optics or all-diamond micro-optics. For some of the most relevant applications, such as shallow implanted NV centers in a cryogenic environment, these tools are unavailable. Here we demonstrate an all-optical spin readout scheme that achieves single-shot fidelity even if photon collection is poor (delivering less than 10$^3$ clicks/second). The scheme is based on spin-dependent resonant excitation at cryogenic temperature combined with spin-to-charge conversion, mapping the fragile electron spin states to the stable charge states. We prove this technique to work on shallow implanted NV centers as they are required for sensing and scalable NV-based quantum registers.
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Submitted 8 December, 2020; v1 submitted 4 June, 2020;
originally announced June 2020.
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Optimisation of a diamond nitrogen vacancy centre magnetometer for sensing of biological signals
Authors:
James Webb,
Luca Troise,
Nikolaj W. Hansen,
Jocelyn Achard,
Ovidiu Brinza,
Robert Staacke,
Michael Kieschnick,
Jan Meijer,
Jean-François Perrier,
Kirstine Berg Sørensen,
Alexander Huck,
Ulrik Lund Andersen
Abstract:
Sensing of signals from biological processes, such as action potential propagation in nerves, are essential for clinical diagnosis and basic understanding of physiology. Sensing can be performed electrically by placing sensor probes near or inside a living specimen or dissected tissue using well established electrophysiology techniques. However, these electrical probe techniques have poor spatial…
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Sensing of signals from biological processes, such as action potential propagation in nerves, are essential for clinical diagnosis and basic understanding of physiology. Sensing can be performed electrically by placing sensor probes near or inside a living specimen or dissected tissue using well established electrophysiology techniques. However, these electrical probe techniques have poor spatial resolution and cannot easily access tissue deep within a living subject, in particular within the brain. An alternative approach is to detect the magnetic field induced by the passage of the electrical signal, giving the equivalent readout without direct electrical contact. Such measurements are performed today using bulky and expensive superconducting sensors with poor spatial resolution. An alternative is to use nitrogen vacancy (NV) centres in diamond that promise biocompatibilty and high sensitivity without cryogenic cooling. In this work we present advances in biomagnetometry using NV centres, demonstrating magnetic field sensitivity of approximately 100 pT/$\sqrt{Hz}$ in the DC/low frequency range using a setup designed for biological measurements. Biocompatibility of the setup with a living sample (mouse brain slice) is studied and optimized, and we show work toward sensitivity improvements using a pulsed magnetometry scheme. In addition to the bulk magnetometry study, systematic artifacts in NV-ensemble widefield fluorescence imaging are investigated.
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Submitted 24 August, 2020; v1 submitted 5 April, 2020;
originally announced April 2020.
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Single artificial atoms in silicon emitting at telecom wavelengths
Authors:
W. Redjem,
A. Durand,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
H. S. Nguyen,
S. Cueff,
J. -M. Gérard,
I. Robert-Philip,
B. Gil,
D. Caliste,
P. Pochet,
M. Abbarchi,
V. Jacques,
A. Dréau,
G. Cassabois
Abstract:
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch…
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Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
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Submitted 7 January, 2020;
originally announced January 2020.
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Spectroscopic Investigations of Negatively Charged Tin-Vacancy Centres in Diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Gergő Thiering,
Philipp Fuchs,
Morgane Gandil,
Takayuki Iwasaki,
Takashi Taniguchi,
Michael Kieschnick,
Jan Meijer,
Mutsuko Hatano,
Adam Gali,
Christoph Becher
Abstract:
The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using…
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The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using photoluminescence excitation spectroscopy (PLE) we probe an energetically higher lying excited state and prove fully lifetime limited linewidths of single emitters at cryogenic temperatures. For these emitters we also investigate the stability of the charge state under resonant excitation. These results provide a detailed insight into the spectroscopic properties of the $\text{SnV}^-$ centre and lay the foundation for further studies regarding its suitability in QIP.
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Submitted 11 February, 2020; v1 submitted 20 September, 2019;
originally announced September 2019.
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Spin Measurements of NV Centers Coupled to a Photonic Crystal Cavity
Authors:
Thomas Jung,
Johannes Görlitz,
Benjamin Kambs,
Christoph Pauly,
Nicole Raatz,
Richard Nelz,
Elke Neu,
Andrew M. Edmonds,
Matthew Markham,
Frank Mücklich,
Jan Meijer,
Christoph Becher
Abstract:
Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate o…
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Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate of indistinguishable single photons and the signal-to-noise ratio (SNR) of coherent spin-photon interfaces. We here report on the enhancement of the SNR of the optical spin read-out achieved by tuning the mode of a two-dimensional photonic crystal (PhC)cavity into resonance with the NV-ZPL. PhC cavities are fabricated by focused ion beam (FIB) milling in thin reactive ion (RIE) etched ultrapure single crystal diamond membranes featuring modes with Q-factors of up to 8250 at mode volumes below one cubic wavelength. NV centers are produced in the cavities in a controlled fashion by a high resolution atomic force microscope (AFM) implantation technique. On cavity resonance we observe a lifetime shortening from 9.0ns to 8.0ns as well as an enhancement of the ZPL emission by almost one order of magnitude. Although on resonance the collection efficiency of ZPL photons and the spin-dependent fluorescence contrast are reduced, the SNR of the optical spin read-out is almost tripled for the cavity-coupled NV centers.
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Submitted 17 July, 2019;
originally announced July 2019.
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Photoluminescence of lead-related optical centers in single-crystal diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
J. Forneris,
T. Herzig,
J. Küpper,
A. Damin,
S. Santonocito,
P. Traina,
E. Moreva,
F. Celegato,
S. Pezzagna,
I. P. Degiovanni,
M. Jakšić,
M. Genovese,
J. Meijer,
P. Olivero
Abstract:
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable…
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We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices.
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Submitted 5 June, 2018;
originally announced June 2018.
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Precision temperature sensing in the presence of magnetic field noise and vice-versa using nitrogen-vacancy centers in diamond
Authors:
Adam M. Wojciechowski,
Mürsel Karadas,
Christian Osterkamp,
Steffen Jankuhn,
Jan Meijer,
Fedor Jelezko,
Alexander Huck,
Ulrik L. Andersen
Abstract:
We demonstrate a technique for precision sensing of temperature or the magnetic field by simultaneously driving two hyperfine transitions involving distinct electronic states of the nitrogen-vacancy center in diamond. Frequency modulation of both driving fields is used with either the same or opposite phase, resulting in the immunity to fluctuations in either the magnetic field or the temperature,…
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We demonstrate a technique for precision sensing of temperature or the magnetic field by simultaneously driving two hyperfine transitions involving distinct electronic states of the nitrogen-vacancy center in diamond. Frequency modulation of both driving fields is used with either the same or opposite phase, resulting in the immunity to fluctuations in either the magnetic field or the temperature, respectively. In this way, a sensitivity of 1.4 nT Hz$^{-1/2}$ or 430 $μ$K Hz$^{-1/2}$ is demonstrated. The presented technique only requires a single frequency demodulator and enables the use of phase-sensitive camera imaging sensors. A simple extension of the method utilizing two demodulators allows for simultaneous, independent, and high-bandwidth monitoring of both the magnetic field and temperature.
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Submitted 20 February, 2018;
originally announced February 2018.
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Coherent control of solid state nuclear spin nano-ensembles
Authors:
Thomas Unden,
Nikolas Tomek,
Timo Weggler,
Florian Frank,
Paz London,
Jonathan Zopes,
Christian Degen,
Nicole Raatz,
Jan Meijer,
Hideyuki Watanabe,
Kohei M. Itoh,
Martin B. Plenio,
Boris Naydenov,
Fedor Jelezko
Abstract:
Detecting and controlling nuclear spin nano-ensembles is crucial for the further development of nuclear magnetic resonance (NMR) spectroscopy and for the emerging solid state quantum technology. Here we present the fabrication of a $\approx$ 1 nanometre thick diamond layer consisting of $^{13}$C nuclear spins doped with Nitrogen-Vacancy centres (NV) embedded in a spin-free $^{12}$C crystal matrix.…
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Detecting and controlling nuclear spin nano-ensembles is crucial for the further development of nuclear magnetic resonance (NMR) spectroscopy and for the emerging solid state quantum technology. Here we present the fabrication of a $\approx$ 1 nanometre thick diamond layer consisting of $^{13}$C nuclear spins doped with Nitrogen-Vacancy centres (NV) embedded in a spin-free $^{12}$C crystal matrix. A single NV in the vicinity of the layer is used for polarization of the $^{13}$C spins and the readout of their magnetization. We demonstrate a method for coherent control of few tens of nuclear spins by using radio frequency pulses and show the basic coherent control experiments - Rabi oscillations, Ramsey spectroscopy and Hahn echo, though any NMR pulse sequence can be implemented. The results shown present a first steps towards the realization of a nuclear spin based quantum simulator.
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Submitted 8 February, 2018;
originally announced February 2018.
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Camera-limits for wide-field magnetic resonance imaging of a nitrogen-vacancy spin sensor
Authors:
Adam M. Wojciechowski,
Mürsel Karadas,
Alexander Huck,
Fedor Jelezko,
Jan Meijer,
Ulrik L. Andersen
Abstract:
Sensitive, real-time optical magnetometry with nitrogen-vacancy centers in diamond relies on accurate imaging of small ($\ll 10^{-2}$) fractional fluorescence changes across the diamond sample. We discuss the limitations on magnetic-field sensitivity resulting from the limited number of photoelectrons that a camera can record in a given time. Several types of camera sensors are analyzed and the sm…
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Sensitive, real-time optical magnetometry with nitrogen-vacancy centers in diamond relies on accurate imaging of small ($\ll 10^{-2}$) fractional fluorescence changes across the diamond sample. We discuss the limitations on magnetic-field sensitivity resulting from the limited number of photoelectrons that a camera can record in a given time. Several types of camera sensors are analyzed and the smallest measurable magnetic-field change is estimated for each type. We show that most common sensors are of a limited use in such applications, while certain highly specific cameras allow to achieve nanotesla-level sensitivity in $1$~s of a combined exposure. Finally, we demonstrate the results obtained with a lock-in camera that pave the way for real-time, wide-field magnetometry at the nanotesla level and with micrometer resolution.
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Submitted 21 August, 2017;
originally announced August 2017.
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Single-photon-emitting optical centers in diamond fabricated upon Sn implantation
Authors:
S. Ditalia Tchernij,
T. Herzig,
J. Forneris,
J. Küpper,
S. Pezzagna,
P. Traina,
E. Moreva,
I. P. Degiovanni,
G. Brida,
N. Skukan,
M. Genovese,
M. Jakšić,
J. Meijer,
P. Olivero
Abstract:
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identi…
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The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view.
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Submitted 26 September, 2017; v1 submitted 4 August, 2017;
originally announced August 2017.
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Sub-millihertz magnetic spectroscopy with a nanoscale quantum sensor
Authors:
Simon Schmitt,
Tuvia Gefen,
Felix M. Stürner,
Thomas Unden,
Gerhard Wolff,
Christoph Müller,
Jochen Scheuer,
Boris Naydenov,
Matthew Markham,
Sebastien Pezzagna,
Jan Meijer,
Ilai Schwarz,
Martin Plenio,
Alex Retzker,
Liam P. McGuinness,
Fedor Jelezko
Abstract:
Precise timekeeping is critical to metrology, forming the basis by which standards of time, length and fundamental constants are determined. Stable clocks are particularly valuable in spectroscopy as they define the ultimate frequency precision that can be reached. In quantum metrology, where the phase of a qubit is used to detect external fields, the clock stability is defined by the qubit cohere…
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Precise timekeeping is critical to metrology, forming the basis by which standards of time, length and fundamental constants are determined. Stable clocks are particularly valuable in spectroscopy as they define the ultimate frequency precision that can be reached. In quantum metrology, where the phase of a qubit is used to detect external fields, the clock stability is defined by the qubit coherence time, which determines the spectral linewidth and frequency precision. Here we demonstrate a quantum sensing protocol where the spectral precision goes beyond the sensor coherence time and is limited by the stability of a classical clock. Using this technique, we observe a precision in frequency estimation scaling in time $T$, as $T^{-3/2}$ for classical oscillating fields. The narrow linewidth magnetometer based on single spins in diamond is used to sense nanoscale magnetic fields with an intrinsic frequency resolution of 607 $μ$Hz, 8 orders of magnitude narrower than the qubit coherence time.
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Submitted 7 June, 2017;
originally announced June 2017.
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Atomic-scale structure analysis of a molecule at a (6-nanometer)$^3$ ice crystal
Authors:
Xi Kong,
Fazhan Shi,
Zhiping Yang,
Pengfei Wang,
Nicole Raatz,
Jan Meijer,
Jiangfeng Du
Abstract:
Water is the most important solvent in nature. It is a crucial issue to study interactions among water molecules. Nuclear magnetic resonance (NMR) spectroscopy is one of the most powerful tools to detect magnetic interactions for the structure analysis of a molecule with broad applications. But conventional NMR spectroscopy requires macroscopic sample quantities with hampers in investigating nanos…
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Water is the most important solvent in nature. It is a crucial issue to study interactions among water molecules. Nuclear magnetic resonance (NMR) spectroscopy is one of the most powerful tools to detect magnetic interactions for the structure analysis of a molecule with broad applications. But conventional NMR spectroscopy requires macroscopic sample quantities with hampers in investigating nanoscale structures. Through quantum control of a single spin quantum sensor, magnetic resonance spectroscopy of nanoscale organic molecules and single molecules has been achieved. However, the measurement of the dipolar interaction of nuclear spins within a molecule at nanoscale and the analysis of its structure remain a big challenge. Here we succeed in detecting the NMR spectrum from an ice crystal with (6-nanometer)$^3$ detection volume. More importantly, the magnetic dipolar coupling between two proton nuclear spins of a water molecule was recorded. The resolved intra-molecule magnetic dipolar interactions are about 15 kHz and 33 kHz with spectral resolution at a few kHz. Analysis of the interaction-resolved NMR spectroscopy provides a spatial view of nanoscale ice crystal, from which the orientation of a water-molecule bond is derived and further the length of the bond can be got. This work enables NMR spectroscopy applications in single molecule structure analysis, provides a further tool for nanocrystalline and confined water research.
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Submitted 25 May, 2017;
originally announced May 2017.
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Room temperature bulk diamond 13-C hyperpolarisation -- Strong evidence for a complex four spin coupling
Authors:
Ralf Wunderlich,
Jonas Kohlrautz,
Bernd Abel,
Jürgen Haase,
Jan Meijer
Abstract:
Hyperpolarisation at room temperature is one of the most important research fields in order to improve liquid, gas or nanoparticle tracer for Magnetic Resonance Imaging (MRI) in medical applications. In this paper we utilize nuclear magnetic resonance (NMR) to investigate the hyperpolarisation effect of negatively charged nitrogen vacancy (NV) centres on carbon-13 nuclei and their spin diffusion i…
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Hyperpolarisation at room temperature is one of the most important research fields in order to improve liquid, gas or nanoparticle tracer for Magnetic Resonance Imaging (MRI) in medical applications. In this paper we utilize nuclear magnetic resonance (NMR) to investigate the hyperpolarisation effect of negatively charged nitrogen vacancy (NV) centres on carbon-13 nuclei and their spin diffusion in a diamond single crystal close to the excited state level anti crossing (ESLAC) around 50 mT. Whereas the electron spins of the NV centre can be easily polarized in its m = 0 ground state at room temperature just by irradiation with green light , the swop of the NV electron spin polarization to a carbon-13 nuclei is a complex task. We found that the coupling between the polarized NV electron spin, the electron spin of a substitutional nitrogen impurity (P1) as well as its nitrogen-14 nuclei and the carbon-13 nuclear spin has to be considered. Here we show that through an optimization of this procedure, in about two minutes a signal to noise ratio which corresponds to a 23 hour standard measurement without hyperpolarisation and an accumulation of 460 single scans can be obtained. Furthermore we were able to identify several polarisation peaks of different sign at different magnetic fields in a region of some tens of gauss. Most of the peaks can be attributed to a coupling of the NV centres to nearby P1 centres. We present a new theoretical model in a framework of cross polarisation of a four spin dynamic model in good agreement with our experimental data. The results demonstrate the opportunities and power as well as limitations of hyperpolarisation in diamond via NV centres. We expect that the current work may have a significant impact on future applications.
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Submitted 27 March, 2017;
originally announced March 2017.
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Protecting a diamond quantum memory by charge state control
Authors:
Matthias Pfender,
Nabeel Aslam,
Patrick Simon,
Denis Antonov,
Gergő Thiering,
Sina Burk,
Felipe Fávaro de Oliveira,
Andrej Denisenko,
Helmut Fedder,
Jan Meijer,
Jose Antonio Garrido,
Adam Gali,
Tokuyuki Teraji,
Junichi Isoya,
Marcus William Doherty,
Audrius Alkauskas,
Alejandro Gallo,
Andreas Grüneis,
Philipp Neumann,
Jörg Wrachtrup
Abstract:
In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its n…
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In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its nuclear spins can yield exceedingly long spin coherence times. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 20. Surprisingly, the new charge state allows switching the optical response of single nodes facilitating full individual addressability.
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Submitted 6 February, 2017;
originally announced February 2017.
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Nanoimplantation and Purcell enhancement of single NV centers in photonic crystal cavities in diamond
Authors:
Janine Riedrich-Möller,
Sébastien Pezzagna,
Jan Meijer,
Christoph Pauly,
Frank Mücklich,
Matthew Markham,
Andrew M. Edmonds,
Christoph Becher
Abstract:
We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the imp…
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We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the implanted NV centers' broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.
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Submitted 19 March, 2015;
originally announced March 2015.
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Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond
Authors:
Y. Romach,
C. Muller,
T. Unden,
L. J. Rogers,
T. Isoda,
K. M. Itoh,
M. Markham,
A. Stacey,
J. Meijer,
S. Pezzagna,
B. Naydenov,
L. P. McGuinness,
N. Bar-Gill,
F. Jelezko
Abstract:
We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy centers in diamond as a function of depth, surface coating, magnetic field and temperature. Analysis reveals a double-Lorentzian noise spectra consistent with a surface electronic spin bath, with slower dynamics due to spin-spin interactions and faster dynamics related to phononic coupling. These results shed new li…
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We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy centers in diamond as a function of depth, surface coating, magnetic field and temperature. Analysis reveals a double-Lorentzian noise spectra consistent with a surface electronic spin bath, with slower dynamics due to spin-spin interactions and faster dynamics related to phononic coupling. These results shed new light on the mechanisms responsible for surface noise affecting shallow spins at semiconductor interfaces, and suggests possible directions for further studies. We demonstrate dynamical decoupling from the surface noise, paving the way to applications ranging from nanoscale NMR to quantum networks.
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Submitted 25 February, 2015; v1 submitted 15 April, 2014;
originally announced April 2014.
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Detection of a single fundamental charge with nanoscale resolution in ambient conditions using the NV$^-$ center in diamond
Authors:
Florian Dolde,
Marcus W. Doherty,
Julia Michl,
Ingmar Jakobi,
Boris Naydenov,
Sebastien Pezzagna,
Jan Meijer,
Philipp Neumann,
Fedor Jelezko,
Neil B. Manson,
Jörg Wrachtrup
Abstract:
Single charge detection with nanoscale spatial resolution in ambient conditions is a current frontier in metrology that has diverse interdisciplinary applications. Here, such single charge detection is demonstrated using two nitrogen-vacancy (NV) centers in diamond. One NV center is employed as a sensitive electrometer to detect the change in electric field created by the displacement of a single…
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Single charge detection with nanoscale spatial resolution in ambient conditions is a current frontier in metrology that has diverse interdisciplinary applications. Here, such single charge detection is demonstrated using two nitrogen-vacancy (NV) centers in diamond. One NV center is employed as a sensitive electrometer to detect the change in electric field created by the displacement of a single electron resulting from the optical switching of the other NV center between its neutral (NV$^0$) and negative (NV$^-$) charge states. As a consequence, our measurements also provide direct insight into the charge dynamics inside the material.
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Submitted 15 October, 2013;
originally announced October 2013.
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High fidelity spin entanglement using optimal control
Authors:
Florian Dolde,
Ville Bergholm,
Ya Wang,
Ingmar Jakobi,
Sebastien Pezzagna,
Jan Meijer,
Philipp Neumann,
T. Schulte-Herbrueggen,
Jacob Biamonte,
Jörg Wrachtrup
Abstract:
Precise control of quantum systems is of fundamental importance for quantum device engineering, such as is needed in the fields of quantum information processing, high-resolution spectroscopy and quantum metrology. When scaling up the quantum registers in such devices, several challenges arise: individual addressing of qubits in a dense spectrum while suppressing crosstalk, creation of entanglemen…
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Precise control of quantum systems is of fundamental importance for quantum device engineering, such as is needed in the fields of quantum information processing, high-resolution spectroscopy and quantum metrology. When scaling up the quantum registers in such devices, several challenges arise: individual addressing of qubits in a dense spectrum while suppressing crosstalk, creation of entanglement between distant nodes, and decoupling from unwanted interactions. The experimental implementation of optimal control is a prerequisite to meeting these challenges. Using engineered microwave pulses, we experimentally demonstrate optimal control of a prototype solid state spin qubit system comprising thirty six energy levels. The spin qubits are associated with proximal nitrogen-vacancy (NV) centers in diamond. We demonstrate precise single-electron spin qubit operations with an unprecedented fidelity F \approx 0.99 in combination with high-efficiency storage of electron spin states in a nuclear spin quantum memory. Matching single-electron spin operations with spin-echo techniques, we further realize high-quality entangled states (F > 0.82) between two electron spins on demand. After exploiting optimal control, the fidelity is mostly limited by the coherence time and imperfect initialization. Errors from crosstalk in a crowded spectrum of 8 lines as well as detrimental effects from active dipolar couplings have been simultaneously eliminated to unprecedented extent. Finally, by entanglement swapping to nuclear spins, nuclear spin entanglement over a length scale of 25 nm is demonstrated. This experiment underlines the importance of optimal control for scalable room temperature spin-based quantum information devices.
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Submitted 17 September, 2013;
originally announced September 2013.
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Room temperature entanglement between distant single spins in diamond
Authors:
Florian Dolde,
Ingmar Jakobi,
Boris Naydenov,
Nan Zhao,
Sebastien Pezzagna,
Christina Trautmann,
Jan Meijer,
Philipp Neumann,
Fedor Jelezko,
Jörg Wrachtrup
Abstract:
Entanglement is the central yet fleeting phenomena of quantum physics. Once being considered a peculiar counter-intuitive property of quantum theory it has developed into the most central element of quantum technology providing speed up to quantum computers, a path towards long distance quantum cryptography and increased sensitivity in quantum metrology. Consequently, there have been a number of e…
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Entanglement is the central yet fleeting phenomena of quantum physics. Once being considered a peculiar counter-intuitive property of quantum theory it has developed into the most central element of quantum technology providing speed up to quantum computers, a path towards long distance quantum cryptography and increased sensitivity in quantum metrology. Consequently, there have been a number of experimental demonstration of entanglement between photons, atoms, ions as well as solid state systems like spins or quantum dots, superconducting circuits and macroscopic diamond. Here we experimentally demonstrate entanglement between two engineered single solid state spin quantum bits (qubits) at ambient conditions. Photon emission of defect pairs reveals ground state spin correlation. Entanglement (fidelity = 0.67 \pm 0.04) is proven by quantum state tomography. Moreover, the lifetime of electron spin entanglement is extended to ms by entanglement swapping to nuclear spins, demonstrating nuclear spin entanglement over a length scale of 25 nm. The experiments mark an important step towards a scalable room temperature quantum device being of potential use in quantum information processing as well as metrology.
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Submitted 12 December, 2012;
originally announced December 2012.
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Nano-fabricated solid immersion lenses registered to single emitters in diamond
Authors:
L. Marseglia,
J. P. Hadden,
A. C. Stanley-Clarke,
J. P. Harrison,
B. Patton,
Y. -L. D. Ho,
B. Naydenov,
F. Jelezko,
J. Meijer,
P. R. Dolan,
J. M. Smith,
J. G. Rarity,
J. L. O'Brien
Abstract:
We describe a technique for fabricating micro- and nano-structures incorporating fluorescent defects in diamond with a positional accuracy in the hundreds of nanometers. Using confocal fluorescence microscopy and focused ion beam (FIB) etching we first locate a suitable defect with respect to registration marks on the diamond surface and then etch a structure using these coordinates. We demonstrat…
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We describe a technique for fabricating micro- and nano-structures incorporating fluorescent defects in diamond with a positional accuracy in the hundreds of nanometers. Using confocal fluorescence microscopy and focused ion beam (FIB) etching we first locate a suitable defect with respect to registration marks on the diamond surface and then etch a structure using these coordinates. We demonstrate the technique here by etching an 8 micron diameter hemisphere positioned such that a single negatively charged nitrogen-vacancy defect lies at its origin. This type of structure increases the photon collection efficiency by removing refraction and aberration losses at the diamond-air interface. We make a direct comparison of the fluorescence photon count rate before and after fabrication and observe an 8-fold increase due to the presence of the hemisphere.
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Submitted 22 February, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
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Chemical control of the charge state of nitrogen-vacancy centers in diamond
Authors:
M. V. Hauf,
B. Grotz,
B. Naydenov,
M. Dankerl,
S. Pezzagna,
J. Meijer,
F. Jelezko,
J. Wrachtrup,
M. Stutzmann,
F. Reinhard,
J. A. Garrido
Abstract:
We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on th…
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We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the dissappearance of NV- in the vicinity of the hydrogen-terminated surface. The band bending, which induces a p-type surface conductive layer leads to a depletion of electrons in the nitrogen vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way for the control of the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to an electrostatic control of the charge state with the use of an external gate electrode.
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Submitted 15 December, 2010; v1 submitted 23 November, 2010;
originally announced November 2010.
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Engineered arrays of NV color centers in diamond based on implantation of CN- molecules through nanoapertures
Authors:
P. Spinicelli,
A. Dréau,
L. Rondin,
F. Silva,
J. Achard,
S. Xavier,
S. Bansropun,
T. Debuisschert,
S. Pezzagna,
J. Meijer,
V. Jacques,
J. -F. Roch
Abstract:
We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a PMMA layer deposited on a diamond surface. The implantation was performed with CN- molecules which increased the NV defect formation yield. This…
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We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a PMMA layer deposited on a diamond surface. The implantation was performed with CN- molecules which increased the NV defect formation yield. This method could enable the realization of a solid-state coupled-spin array and could be used for positioning an optically active NV center on a photonic microstructure.
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Submitted 9 August, 2010;
originally announced August 2010.
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Single photon emitters based on Ni/Si related defects in single crystalline diamond
Authors:
David Steinmetz,
Elke Neu,
Jan Meijer,
Wolfgang Bolse,
Christoph Becher
Abstract:
We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose 10^12/cm^2 and 10^10/cm^2 resp.) due to creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in…
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We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose 10^12/cm^2 and 10^10/cm^2 resp.) due to creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767nm and 775nm and narrow line-widths of 2nm FWHM at room temperature. Measurements of the intensity auto-correlation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78kcounts/s whereas others show fluctuating count rates and three-level blinking.
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Submitted 31 October, 2010; v1 submitted 1 July, 2010;
originally announced July 2010.
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Scalable quantum register based on coupled electron spins in a room temperature solid
Authors:
P. Neumann,
R. Kolesov,
B. Naydenov,
J. Beck,
F. Rempp,
M. Steiner,
V. Jacques,
G. Balasubramanian,
M. L. Markham,
D. J. Twitchen,
S. Pezzagna,
J. Meijer,
J. Twamley,
F. Jelezko,
J. Wrachtrup
Abstract:
Realization of devices based on quantum laws might lead to building processors that outperform their classical analogues and establishing unconditionally secure communication protocols. Solids do usually present a serious challenge to quantum coherence. However, owing to their spin-free lattice and low spin orbit coupling, carbon materials and particularly diamond are suitable for hosting robust s…
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Realization of devices based on quantum laws might lead to building processors that outperform their classical analogues and establishing unconditionally secure communication protocols. Solids do usually present a serious challenge to quantum coherence. However, owing to their spin-free lattice and low spin orbit coupling, carbon materials and particularly diamond are suitable for hosting robust solid state quantum registers. We show that scalable quantum logic elements can be realized by exploring long range magnetic dipolar coupling between individually addressable single electron spins associated with separate color centers in diamond. Strong distance dependence of coupling was used to characterize the separation of single qubits 98 A with unprecedented accuracy (3 A) close to a crystal lattice spacing. Our demonstration of coherent control over both electron spins, conditional dynamics, selective readout as well as switchable interaction, opens the way towards a room temperature solid state scalable quantum register. Since both electron spins are optically addressable, this solid state quantum device operating at ambient conditions provides a degree of control that is currently available only for atomic systems.
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Submitted 28 April, 2010;
originally announced April 2010.
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Single-photon emission from Ni-related color centers in CVD diamond
Authors:
David Steinmetz,
Elke Neu,
Christian Hepp,
Roland Albrecht,
Wolfgang Bolse,
Jan Meijer,
Detlef Rogalla,
Christoph Becher
Abstract:
Color centers in diamond are very promising candidates among the possible realizations for practical single-photon sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows single-photon emission, but within a large, phonon-broadened spectrum (~100nm), which strongly limits its applicability for quantum communication. By contrast, Ni-related…
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Color centers in diamond are very promising candidates among the possible realizations for practical single-photon sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows single-photon emission, but within a large, phonon-broadened spectrum (~100nm), which strongly limits its applicability for quantum communication. By contrast, Ni-related centers exhibit narrow emission lines at room temperature. We present investigations on single color centers consisting of Ni and Si created by ion implantation into single crystalline IIa diamond. We use systematic variations of ion doses between 10^8/cm^2 and 10^14/cm^2 and energies between 30keV and 1.8MeV. The Ni-related centers show emission in the near infrared spectral range (~770nm to 787nm) with a small line-width (~3nm FWHM). A measurement of the intensity correlation function proves single-photon emission. Saturation measurements yield a rather high saturation count rate of 77.9 kcounts/s. Polarization dependent measurements indicate the presence of two orthogonal dipoles.
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Submitted 9 June, 2010; v1 submitted 17 March, 2010;
originally announced March 2010.
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Deterministic Ultracold Ion Source targeting the Heisenberg Limit
Authors:
W. Schnitzler,
N. M. Linke,
R. Fickler,
J. Meijer,
F. Schmidt-Kaler,
K. Singer
Abstract:
The major challenges to fabricate quantum processors and future nano solid state devices are material modification techniques with nanometre resolution and suppression of statistical fluctuations of dopants or qubit carriers. Based on a segmented ion trap with mK laser cooled ions we have realized a deterministic single ion source which could operate with a huge range of sympathetically cooled i…
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The major challenges to fabricate quantum processors and future nano solid state devices are material modification techniques with nanometre resolution and suppression of statistical fluctuations of dopants or qubit carriers. Based on a segmented ion trap with mK laser cooled ions we have realized a deterministic single ion source which could operate with a huge range of sympathetically cooled ion species, isotopes or ionic molecules. We have deterministically extracted a predetermined number of ions on demand and have measured a longitudinal velocity uncertainty of 6.3m/s and a spatial beam divergence of 0.6 mrad. We show in numerical simulations that if the ions are cooled to the motional ground state (Heisenberg limit) nanometre spatial resolution can be achieved.
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Submitted 3 February, 2009;
originally announced February 2009.
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Dynamic polarization of single nuclear spins by optical pumping of NV color centers in diamond at room temperature
Authors:
V. Jacques,
P. Neumann,
J. Beck,
M. Markham,
D. Twitchen,
J. Meijer,
F. Kaiser,
G. Balasubramanian,
F. Jelezko,
J. Wrachtrup
Abstract:
We report a versatile method to efficiently polarize single nuclear spins in diamond, which is based on optical pumping of a single NV color center and mediated by a level-anti crossing in its excited state. A nuclear spin polarization higher than 98% is achieved at room temperature for the 15N nuclear spin associated to the NV center, corresponding to $μ$K effective nuclear spin temperature. We…
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We report a versatile method to efficiently polarize single nuclear spins in diamond, which is based on optical pumping of a single NV color center and mediated by a level-anti crossing in its excited state. A nuclear spin polarization higher than 98% is achieved at room temperature for the 15N nuclear spin associated to the NV center, corresponding to $μ$K effective nuclear spin temperature. We then show simultaneous deterministic initialization of two nuclear spins (13C and 15N) in close vicinity to a NV defect. Such robust control of nuclear spin states is a key ingredient for further scaling up of nuclear-spin based quantum registers in diamond.
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Submitted 10 February, 2009; v1 submitted 1 August, 2008;
originally announced August 2008.
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Room temperature coherent control of coupled single spins in solid
Authors:
T. Gaebel,
M. Domhan,
I. Popa,
C. Wittmann,
P. Neumann,
F. Jelezko,
J. R. Rabeau,
N. Stavrias,
A. D. Greentree,
S. Prawer,
J. Meijer,
J. Twamley,
P. R. Hemmer,
J. Wrachtrup
Abstract:
Coherent coupling between single quantum objects is at the heart of modern quantum physics. When coupling is strong enough to prevail over decoherence, it can be used for the engineering of correlated quantum states. Especially for solid-state systems, control of quantum correlations has attracted widespread attention because of applications in quantum computing. Such coherent coupling has been…
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Coherent coupling between single quantum objects is at the heart of modern quantum physics. When coupling is strong enough to prevail over decoherence, it can be used for the engineering of correlated quantum states. Especially for solid-state systems, control of quantum correlations has attracted widespread attention because of applications in quantum computing. Such coherent coupling has been demonstrated in a variety of systems at low temperature1, 2. Of all quantum systems, spins are potentially the most important, because they offer very long phase memories, sometimes even at room temperature. Although precise control of spins is well established in conventional magnetic resonance3, 4, existing techniques usually do not allow the readout of single spins because of limited sensitivity. In this paper, we explore dipolar magnetic coupling between two single defects in diamond (nitrogen-vacancy and nitrogen) using optical readout of the single nitrogen-vacancy spin states. Long phase memory combined with a defect separation of a few lattice spacings allow us to explore the strong magnetic coupling regime. As the two-defect system was well-isolated from other defects, the long phase memory times of the single spins was not diminished, despite the fact that dipolar interactions are usually seen as undesirable sources of decoherence. A coherent superposition of spin pair quantum states was achieved. The dipolar coupling was used to transfer spin polarisation from a nitrogen-vacancy centre spin to a nitrogen spin, with optical pumping of a nitrogen-vacancy centre leading to efficient initialisation. At the level anticrossing efficient nuclear spin polarisation was achieved. Our results demonstrate an important step towards controlled spin coupling and multi-particle entanglement in the solid state.
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Submitted 3 May, 2006;
originally announced May 2006.
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Single Ion Implantation for Solid State Quantum Computer Development
Authors:
T. Schenkel,
J. P. Holder,
J. W. McDonald,
J. Meijer,
A. Persaud,
D. H. Schneider
Abstract:
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficieny. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10keV), sing…
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Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficieny. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10keV), single ion implantation scheme for 31P(q+) ions. When 31P(q+) ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.
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Submitted 29 January, 2002;
originally announced January 2002.