This work reports results of Silicon Carbide plates, disks, pipes and pipe-disk couples bonded by... more This work reports results of Silicon Carbide plates, disks, pipes and pipe-disk couples bonded by a Spark Plasma Sintering apparatus. The joining was conducted at 1900⁰C for 30 minutes with a 16 MPa uniaxial pressure. The samples were analysed by Scanning Acoustic Microscopy which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nano-indentation. It was concluded that Spark plasma sintering technique may serve as a valid and effective tool for diffusion bonding of high temperature resistant silicon carbide with different geometries.
This work reports results of Silicon Carbide plates, disks, pipes and pipe-disk couples bonded by... more This work reports results of Silicon Carbide plates, disks, pipes and pipe-disk couples bonded by a Spark Plasma Sintering apparatus. The joining was conducted at 1900⁰C for 30 minutes with a 16 MPa uniaxial pressure. The samples were analysed by Scanning Acoustic Microscopy which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nano-indentation. It was concluded that Spark plasma sintering technique may serve as a valid and effective tool for diffusion bonding of high temperature resistant silicon carbide with different geometries.
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