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ORCIDWerner Simbürger
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2010 – 2019
- 2018
[c12]Vadim Issakov
, Sebastian Kehl-Waas, Radu Ciocoveanu, Werner Simbürger, Angelika Geiselbrechtinger:
A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS. BCICTS 2018: 194-197- 2016
- [j10]Werner Simbürger, Joost A. Willemen, Vadim Vendt, Thomas Schwingshackl, Antoine D'Arbonneau:
Transient voltage suppressors - technologies and characteristics. Elektrotech. Informationstechnik 133(1): 11-17 (2016) - 2015
- [j9]Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany:
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectron. Reliab. 55(9-10): 1471-1475 (2015) - 2011
- [j8]Martin Sauter, Werner Simbürger, David Johnsson, Matthias Stecher:
On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP). Microelectron. Reliab. 51(8): 1309-1314 (2011) - 2010
- [j7]Harald Gossner, Werner Simbürger, Matthias Stecher:
System ESD robustness by co-design of on-chip and on-board protection measures. Microelectron. Reliab. 50(9-11): 1359-1366 (2010)
2000 – 2009
- 2009
- [j6]Vadim Issakov, Domagoj Siprak, Marc Tiebout, Andreas Thiede, Werner Simbürger, Linus Maurer:
Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS. IET Circuits Devices Syst. 3(6): 340-349 (2009) - [c11]Vadim Issakov, Marc Tiebout, Herbert Knapp, Yiqun Cao, Werner Simbürger:
Merged power amplifier and mixer circuit topology for radar applications in CMOS. ESSCIRC 2009: 300-303 - [c10]Vadim Issakov, Herbert Knapp, Filippo Magrini, Andreas Thiede, Werner Simbürger, Linus Maurer:
Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology. ESSCIRC 2009: 308-311 - 2007
- [j5]Saverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz:
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. IEEE J. Solid State Circuits 42(10): 2099-2106 (2007) - [c9]Saverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology. ESSCIRC 2007: 356-359 - [c8]Marcin K. Augustyniak, W. Weber, Gottfried Beer, Hans Mulatz, L. Elbrecht, H.-J. Timme, Marc Tiebout, Werner Simbürger, Christian Paulus, Björn Eversmann, Doris Schmitt-Landsiedel, Roland Thewes, Ralf Brederlow:
An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13μm CMOS Technology. ISSCC 2007: 392-610 - [c7]Saverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz:
A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar. ISSCC 2007: 430-613 - 2004
- [j4]Winfried Bakalski, Werner Simbürger, Ronald Thüringer, Andriy Vasylyev, Arpad L. Scholtz:
A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-Ω output. IEEE J. Solid State Circuits 39(7): 1006-1014 (2004) - [j3]Werner Perndl, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Werner Simbürger, Arpad L. Scholtz:
Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology. IEEE J. Solid State Circuits 39(10): 1773-1777 (2004) - [c6]Christoph Kienmayer, Marc Tiebout, Werner Simbürger, Arpad L. Scholtz:
A low-power low-voltage NMOS bulk-mixer with 20 GHz bandwidth in 90 nm CMOS. ISCAS (4) 2004: 385-388 - 2003
- [c5]Winfried Bakalski, Werner Simbürger, Ronald Thüringer, Andriy Vasylyev, Arpad L. Scholtz:
A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output. ESSCIRC 2003: 561-564 - 2002
- [c4]Winfried Bakalski, Werner Simbürger, Daniel Kehrer, Hans-Dieter Wohlmuth, Mirjana Rest, Arpad L. Scholtz:
A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz fT Si-bipolar. ISCAS (4) 2002: 803-806 - 2001
- [j2]Hans-Dieter Wohlmuth, Werner Simbürger:
A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz. IEEE J. Solid State Circuits 36(7): 1132-1137 (2001) - [c3]Daniel Kehrer, Werner Simbürger, Hans-Dieter Wohlmuth, Arpad L. Scholtz:
Modeling of monolithic lumped planar transformers up to 20 GHz. CICC 2001: 401-404
1990 – 1999
- 1999
- [j1]Werner Simbürger, Hans-Dieter Wohlmuth, Peter Weger, Alexander Heinz:
A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz. IEEE J. Solid State Circuits 34(12): 1881-1892 (1999) - 1994
- [c2]Ernst Bonek, Gerhard Schultes, Peter Kreuzgruber, Werner Simbürger, Peter Weger, T. C. Leslie, J. Popp, Herbert Knapp, N. Rohringer:
Personal communications transceiver architectures for monolithic integration. PIMRC 1994: 363-368 - 1992
- [c1]Gerhard Schultes, Arpad L. Scholtz, Martin Happel, Werner Simbürger:
A testbed for DECT physical- and medium access-layer. PIMRC 1992: 349-356
Coauthor Index
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