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2020 – today
- 2025
[j14]Lucas Speckbacher
, David Johannes Pommerenke, Gabriel Fellner, Lukas Pertoll, Harald Gossner:
System-Efficient ESD Design Based on a Modular Measurement System Applied to USB. IEEE Trans. Instrum. Meas. 74: 1-8 (2025)
2010 – 2019
- 2018
- [c8]Milova Paul, Boeila Sampath Kumar, Harald Gossner, Mayank Shrivastava:
Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability. IRPS 2018: 3 - 2017
- [c7]Milova Paul, Christian Russ, Boeila Sampath Kumar, Harald Gossner, Mayank Shrivastava:
Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete? VLSID 2017: 391-394 - 2016
- [c6]Ankur Gupta, Mayank Shrivastava, Maryam Shojaei Baghini, Harald Gossner, V. Ramgopal Rao:
A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package. VLSID 2016: 156-161 - 2015
- [j13]Harald Gossner, Charvaka Duvvury:
System efficient ESD design. Microelectron. Reliab. 55(12): 2607-2613 (2015) - 2012
- [c5]Michael G. Khazhinsky, Shuqing Cao, Harald Gossner, Gianluca Boselli, Melanie Etherton:
Electronic design automation (EDA) solutions for ESD-robust design and verification. CICC 2012: 1-8 - 2010
- [j12]Harald Gossner, Werner Simbürger, Matthias Stecher:
System ESD robustness by co-design of on-chip and on-board protection measures. Microelectron. Reliab. 50(9-11): 1359-1366 (2010)
2000 – 2009
- 2009
- [j11]Wolfgang Stadler, Tilo Brodbeck, Reinhold Gärtner, Harald Gossner:
Do ESD fails in systems correlate with IC ESD robustness? Microelectron. Reliab. 49(9-11): 1079-1085 (2009) - [j10]Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix:
Reliability aspects of gate oxide under ESD pulse stress. Microelectron. Reliab. 49(12): 1407-1416 (2009) - 2007
- [j9]Wolfgang Soldner, Martin Streibl, U. Hodel, Marc Tiebout, Harald Gossner, Doris Schmitt-Landsiedel, Jung-Hoon Chun, Choshu Ito, Robert W. Dutton:
RF ESD protection strategies: Codesign vs. low-C protection. Microelectron. Reliab. 47(7): 1008-1015 (2007) - [c4]Moon-Jung Kim, Henrik Icking, Harald Gossner, Thomas H. Lee:
High-Voltage-Tolerant I/O Circuit Design for USB 2.0-Compliant Applications. CICC 2007: 491-494 - [c3]Wolfgang Soldner, Moon-Jung Kim, Martin Streibl, Harald Gossner, Thomas H. Lee, Doris Schmitt-Landsiedel:
A 10GHz Broadband Amplifier with Bootstrapped 2kV ESD Protection. ISSCC 2007: 550-551 - 2006
- [c2]Christian Pacha, Klaus von Arnim, Thomas Schulz, Weize Xiong, Michael Gostkowski, Gerhard Knoblinger, Andrew Marshall, Thomas Nirschl, Jörg Berthold, Christian Russ, Harald Gossner, Charvaka Duvvury, Paul Patruno, C. Rinn Cleavelin, Klaus Schruefer:
Circuit design issues in multi-gate FET CMOS technologies. ISSCC 2006: 1656-1665 - 2005
- [j8]Martin Streibl, Franz Zängl, Kai Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis. Microelectron. Reliab. 45(2): 313-321 (2005) - [j7]Heinrich Wolf, Horst A. Gieser, Wolfgang Soldner, Harald Gossner:
A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits. Microelectron. Reliab. 45(9-11): 1421-1424 (2005) - 2004
- [c1]Harald Gossner:
ESD protection for the deep sub micron regime - a challenge for design methodology. VLSI Design 2004: 809- - 2003
- [j6]Martin Streibl, Kai Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner:
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. Microelectron. Reliab. 43(7): 1001-1010 (2003) - 2002
- [j5]Wolfgang Stadler, Kai Esmark, Harald Gossner, Martin Streibl, M. Wendel, Wolfgang Fichtner, Dionyz Pogany, Martin Litzenberger, Erich Gornik:
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectron. Reliab. 42(9-11): 1267-1274 (2002) - [j4]Franz Zängl, Harald Gossner, Kai Esmark, R. Owen, G. Zimmermann:
Case study of a technology transfer causing ESD problems. Microelectron. Reliab. 42(9-11): 1275-1280 (2002) - 2001
- [j3]Harald Gossner, T. Müller-Lynch, Kai Esmark, Matthias Stecher:
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. Microelectron. Reliab. 41(3): 385-393 (2001) - [j2]Martin Litzenberger, R. Pichler, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Kai Esmark, Harald Gossner:
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. Microelectron. Reliab. 41(9-10): 1385-1390 (2001) - [j1]Kai Esmark, Wolfgang Stadler, M. Wendel, Harald Gossner, X. Guggenmos, Wolfgang Fichtner:
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase. Microelectron. Reliab. 41(11): 1761-1770 (2001)
Coauthor Index
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