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2010 – 2019
- 2016
[c5]Johanna Krainer, Marco Deluca
, Eva Lackner, Florentyna Sosada, Robert Wimmer-Teubenbacher, Anton Köck, Christian Gspan, Justyna Bekacz, Anneliese Poenninger, Karl Rohracher, Ewald Wachmann, Martin Schrems:
CMOS integrated tungsten oxide nanowire networks for ppb-level hydrogen sulfide sensing. IEEE SENSORS 2016: 1-3- 2014
- [c4]Giorgio C. Mutinati, Elise Brunet, Olena Yurchenko, Elmar Laubender, Gerald A. Urban, Anton Köck, Stephan Steinhauer, Joerg Siegert, Karl Rohracher, Franz Schrank, Martin Schrems:
Bimetallic nanoparticles for optimizing CMOS integrated SnO2 gas sensor devices. ESSDERC 2014: 78-81 - [c3]Martin Schrems, Joerg Siegert, Peter Dorfi, Jochen Kraft, Ewald Stueckler, Franz Schrank, Siegfried Selberherr:
Manufacturing of 3D integrated sensors and circuits. ESSDERC 2014: 162-165
2000 – 2009
- 2008
- [j2]Martin Schrems, Martin Knaipp, Hubert Enichlmair, Verena Vescoli, Rainer Minixhofer, Ehrenfried Seebacher, Friedrich Peter Leisenberger, Ewald Wachmann, Gregor Schatzberger, Heimo Gensinger:
Scalable High Voltage CMOS technology for Smart Power and sensor applications. Elektrotech. Informationstechnik 125(4): 109-117 (2008) - [j1]Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems:
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors. IET Circuits Devices Syst. 2(3): 347-353 (2008) - 2006
- [c2]Federico Baronti, Paolo D'Abramo, Martin Knaipp, Rainer Minixhofer, Roberto Roncella, Roberto Saletti, Martin Schrems, Riccardo Serventi, Verena Vescoli:
FlexRay transceiver in a 0.35 µm CMOS high-voltage technology. DATE Designers' Forum 2006: 201-205 - [c1]M. Thomas, J. Pathak, J. Payne, Friedrich Peter Leisenberger, Ewald Wachmann, Gregor Schatzberger, Andreas Wiesner, Martin Schrems:
A Non-Volatile Embedded Memory for High Temperature Automotive and High-Retention Applications. ISQED 2006: 591-596
Coauthor Index
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