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ORCIDUwe Schroeder
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- affiliation: NaMLab gGmbH, Dresden, Germany
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2020 – today
- 2024
[c14]Pramoda Vishnumurthy, Ruben Alcala, Thomas Mikolajick
, Uwe Schroeder, Luis Azevedo Antunes, Alfred Kersch:
Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). IRPS 2024: 1-10- [c13]Yusuke Shuto, Jun Okuno, Tsubasa Yonai, Ryo Ono, Peter Reinig, Maximilian Lederer, Konrad Seidel, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Taku Umebayashi, Kentaro Akiyama:
HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. VLSI Technology and Circuits 2024: 1-2 - 2023
- [i1]Xiwen Liu, Keshava Katti, Yunfei He, Paul Jacob, Claudia Richter, Uwe Schroeder, Santosh Kurinec, Pratik Chaudhari, Deep Jariwala:
Analog Content-Addressable Memory from Complementary FeFETs. CoRR abs/2309.09165 (2023) - 2022
- [c12]Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck:
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide. DRC 2022: 1-2 - [c11]Ruben Alcala, Furqan Mehmood, Pramoda Vishnumurthy, Terence Mittmann, Thomas Mikolajick, Uwe Schroeder:
Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance. IMW 2022: 1-4 - 2021
- [c10]Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Hideki Maemura, Yusuke Shuto, Fumitaka Sugaya, Monica Materano, Tarek Ali, Maximilian Lederer, Kati Kühnel, Konrad Seidel, Uwe Schroeder, Thomas Mikolajick, Masanori Tsukamoto, Taku Umebayashi:
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application. IMW 2021: 1-3 - [c9]Halid Mulaosmanovic, Patrick D. Lomenzo, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, Benjamin Max:
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. IRPS 2021: 1-6
2010 – 2019
- 2019
- [c8]Thomas Mikolajick, Halid Mulaosmanovic, Michael Hoffmann, Benjamin Max, Terence Mittmann, Uwe Schroeder, Stefan Slesazeck:
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. DRC 2019: 207-208 - [c7]Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder, Benjamin Max:
Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. NVMTS 2019: 1-8 - 2018
- [c6]Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Embedding hafnium oxide based FeFETs in the memory landscape. ICICDT 2018: 121-124 - 2017
- [c5]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe, Lukas M. Eng, Thomas Mikolajick, Uwe Schroeder:
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. ESSDERC 2017: 160-163 - [c4]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. NVMTS 2017: 1-4 - 2016
- [c3]Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick:
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC 2016: 364-368 - [c2]Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Böttger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder:
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. ESSDERC 2016: 369-372 - 2013
- [c1]Tony Schenk, Stefan Mueller, Uwe Schroeder, Robin Materlik, Alfred Kersch, Mihaela Popovici, Christoph Adelmann, Sven Van Elshocht, Thomas Mikolajick:
Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. ESSDERC 2013: 260-263
2000 – 2009
- 2007
- [j1]Rainer Duschl, Martin Kerber, A. Avellan, S. Jakschik, Uwe Schroeder, S. Kudelka:
Reliability aspects of Hf-based capacitors: Breakdown and trapping effects. Microelectron. Reliab. 47(4-5): 497-500 (2007)
Coauthor Index
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