"Ferroelectric Hf1-xZrxO2 memories: device ..."

Patrick D. Lomenzo et al. (2019)

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DOI: 10.1109/NVMTS47818.2019.9043368

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-05

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Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder, Benjamin Max:
Ferroelectric Hf_1-xZr_xO₂ memories: device reliability and depolarization fields. NVMTS 2019: 1-8

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