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ORCIDKeiichi Kushida
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2010 – 2019
- 2016
[c12]Hiroki Noguchi, Kazutaka Ikegami, Satoshi Takaya, Eishi Arima, Keiichi Kushida, Atsushi Kawasumi, Hiroyuki Hara, Keiko Abe, Naoharu Shimomura, Junichi Ito, Shinobu Fujita, Takashi Nakada, Hiroshi Nakamura
:
7.2 4Mb STT-MRAM-based cache with memory-access-aware power optimization and write-verify-write / read-modify-write scheme. ISSCC 2016: 132-133- 2015
- [c11]Hiroki Noguchi, Kazutaka Ikegami, Keiichi Kushida, Keiko Abe, Shogo Itai, Satoshi Takaya, Naoharu Shimomura, Junichi Ito, Atsushi Kawasumi, Hiroyuki Hara, Shinobu Fujita:
7.5 A 3.3ns-access-time 71.2μW/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture. ISSCC 2015: 1-3 - 2014
- [j5]Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Miyako Shizuno, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa:
A 27% Active and 85% Standby Power Reduction in Dual-Power-Supply SRAM Using BL Power Calculator and Digitally Controllable Retention Circuit. IEEE J. Solid State Circuits 49(1): 118-126 (2014) - 2013
- [c10]Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Miyako Shizuno, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa:
A 27% active and 85% standby power reduction in dual-power-supply SRAM using BL power calculator and digitally controllable retention circuit. ISSCC 2013: 320-321 - 2012
- [c9]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe:
Energy efficiency deterioration by variability in SRAM and circuit techniques for energy saving without voltage reduction. ICICDT 2012: 1-4 - [c8]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe:
A 47% access time reduction with a worst-case timing-generation scheme utilizing a statistical method for ultra low voltage SRAMs. VLSIC 2012: 100-101 - 2011
- [j4]Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yuki Fujimura, Tomoaki Yabe:
A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers. IEEE J. Solid State Circuits 46(11): 2545-2551 (2011) - [c7]Keiichi Kushida, Osamu Hirabayashi, Fumihiko Tachibana, Hiroyuki Hara, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Yuki Fujimura, Yusuke Niki, Miyako Shizuno, Shinichi Sasaki, Tomoaki Yabe:
A trimless, 0.5V-1.0V wide voltage operation, high density SRAM macro utilizing dynamic cell stability monitor and multiple memory cell access. A-SSCC 2011: 161-164 - 2010
- [j3]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Yuki Fujimura, Tomoaki Yabe:
A Low-Supply-Voltage-Operation SRAM With HCI Trimmed Sense Amplifiers. IEEE J. Solid State Circuits 45(11): 2341-2347 (2010) - [c6]Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe:
A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm2 cell in 32nm high-k metal-gate CMOS. ISSCC 2010: 348-349
2000 – 2009
- 2009
- [j2]Keiichi Kushida, Azuma Suzuki, Gou Fukano, Atsushi Kawasumi, Osamu Hirabayashi, Yasuhisa Takeyama, Takahiko Sasaki, Akira Katayama, Yuki Fujimura, Tomoaki Yabe:
A 0.7 V Single-Supply SRAM With 0.495 µm2 Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme. IEEE J. Solid State Circuits 44(4): 1192-1198 (2009) - [c5]Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe:
A process-variation-tolerant dual-power-supply SRAM with 0.179µm2 Cell in 40nm CMOS using level-programmable wordline driver. ISSCC 2009: 458-459 - 2008
- [c4]Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Akihito Tohata, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka:
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-×-ratio Memory Cell. ISSCC 2008: 382-383 - [c3]Akira Katayama, Tomoaki Yabe, Osamu Hirabayashi, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Nobuaki Otsuka:
Direct Cell-Stability Test Techniques for an SRAM Macro with Asymmetric Cell-Bias-Voltage Modulation. ITC 2008: 1-7 - 2006
- [j1]Yasuhisa Takeyama, Hiroyuki Otake, Osamu Hirabayashi, Keiichi Kushida, Nobuaki Otsuka:
A low leakage SRAM macro with replica cell biasing scheme. IEEE J. Solid State Circuits 41(4): 815-822 (2006) - 2005
- [c2]Keiichi Kushida, Nobuaki Otsuka, Osamu Hirabayashi, Yasuhisa Takeyama:
DFT techniques for memory macro with built-in ECC. MTDT 2005: 109-114 - 2002
- [c1]Osamu Hirabayashi, Azuma Suzuki, Tomoaki Yabe, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Akihito Tohata, Nobuaki Otsuka:
DFT Techniques for Wafer-Level At-Speed Testing of High-Speed SRAMs. ITC 2002: 164-169
Coauthor Index
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