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"Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with ..."

Matthias Sinnwell et al. (2024)

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DOI: 10.1109/DRC61706.2024.10605504

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-16

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Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay:
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. DRC 2024: 1-2

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