Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for ..."

Jonathan Chang et al. (2013)

> Home

Details and statistics

DOI: 10.1109/ISSCC.2013.6487750

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/isscc/ChangCCCLLCNLWLWCCC13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isscc/ChangCCCLLCNLWLWCCC13
Jonathan Chang, Yen-Huei Chen, Hank Cheng, Wei-Min Chan, Hung-Jen Liao, Quincy Li, Stanley Chang, Sreedhar Natarajan, Robin Lee, Ping-Wei Wang, Shyue-Shyh Lin, Chung-Cheng Wu, Kuan-Lun Cheng, Min Cao, George H. Chang:
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. ISSCC 2013: 316-317

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.