"A PMOS read-port 8T SRAM cell with optimized leakage power and enhanced ..."

Jiangzheng Cai et al. (2017)

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DOI: 10.1587/ELEX.14.20161188

access: open

type: Journal Article

metadata version: 2021-02-12

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  - https://dblp.org/rec/journals/ieiceee/CaiYCCH17
Jiangzheng Cai, Jia Yuan, Liming Chen, Chengying Chen, Yong Hei:
A PMOS read-port 8T SRAM cell with optimized leakage power and enhanced performance. IEICE Electron. Express 14(3): 20161188 (2017)

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