"A two-dimension half-select free 12T SRAM cell with enhanced write ability ..."

Jialu Yin et al. (2022)

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DOI: 10.1587/ELEX.19.20220351

access: open

type: Journal Article

metadata version: 2023-02-15

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  - https://dblp.org/rec/journals/ieiceee/YinYLQ22
Jialu Yin, Jia Yuan, Zhi Li, Shushan Qiao:
A two-dimension half-select free 12T SRAM cell with enhanced write ability and read stability for bit-interleaving architecture. IEICE Electron. Express 19(23): 20220351 (2022)

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