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"Ultrathin HfOxNy Gate Insulator Formation by ..."
Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh (2006)
- Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh:
Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films. IEICE Trans. Electron. 89-C(5): 596-601 (2006)
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