Stop the war!
Остановите войну!
for scientists:
default search action
"A 290-mV, 7-nm Ultra-Low-Voltage One-Port SRAM Compiler Design Using a 12T ..."
Mahmut E. Sinangil et al. (2019)
- Mahmut E. Sinangil, Yen-Ting Lin, Hung-Jen Liao, Jonathan Chang:
A 290-mV, 7-nm Ultra-Low-Voltage One-Port SRAM Compiler Design Using a 12T Write Contention and Read Upset Free Bit-Cell. IEEE J. Solid State Circuits 54(4): 1152-1160 (2019)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.