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"A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With ..."

Ken Takeuchi et al. (2007)

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DOI: 10.1109/JSSC.2006.888299

access: closed

type: Journal Article

metadata version: 2023-09-14

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Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56-nm CMOS 99-mm² 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. IEEE J. Solid State Circuits 42(1): 219-232 (2007)

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