"Asymmetric trench SiC MOSFET with integrated channel accumulation diode ..."

Sheng Gao et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106436

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type: Journal Article

metadata version: 2024-10-22

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Sheng Gao, Xianfeng Zhang, Qi Wang, Shengqi Yu, Yang Zuo, Hongsheng Zhang, Yi Huang:
Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics. Microelectron. J. 153: 106436 (2024)

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