"Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si ..."

H. Lakhdhar et al. (2016)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2016.07.026

access: closed

type: Journal Article

metadata version: 2022-03-23

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LakhdharLCDLJM16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LakhdharLCDLJM16
H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64: 594-598 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.