"Correlation between transient evolutions of the gate and drain currents in ..."

O. Lazar et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.06.122

access: closed

type: Journal Article

metadata version: 2020-02-22

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O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J.-L. Roux:
Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectron. Reliab. 55(9-10): 1714-1718 (2015)

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