"Comparison of low-temperature electrical characteristics of ..."

Kiichi Tachi et al. (2011)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2011.01.004

access: closed

type: Journal Article

metadata version: 2024-03-24

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/TachiBKICE11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/TachiBKICE11
Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst:
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. Microelectron. Reliab. 51(5): 885-888 (2011)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.