"AlN capping layer inserted between Cu and SiCN dielectric barrier layer ..."

Ming Zhou (2015)

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DOI: 10.1016/J.MICROREL.2015.08.009

access: closed

type: Journal Article

metadata version: 2020-02-22

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Ming Zhou:
AlN capping layer inserted between Cu and SiCN dielectric barrier layer for enhancing reliability of 28 nm technological node and beyond. Microelectron. Reliab. 55(12): 2705-2711 (2015)

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