"C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET ..."

Mor M. Dahan et al. (2022)

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DOI: 10.1109/TCSI.2021.3139736

access: closed

type: Journal Article

metadata version: 2022-04-27

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Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky:
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory. IEEE Trans. Circuits Syst. I Regul. Pap. 69(4): 1595-1605 (2022)

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