"A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist ..."

Yajuan He et al. (2019)

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DOI: 10.1109/TVLSI.2019.2919104

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type: Journal Article

metadata version: 2025-01-19

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Yajuan He, Jiubai Zhang, Xiaoqing Wu, Xin Si, Shaowei Zhen, Bo Zhang:
A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations. IEEE Trans. Very Large Scale Integr. Syst. 27(10): 2344-2353 (2019)

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