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ORCIDJohannes Borngräber
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2010 – 2019
- 2018
[c11]Frank Herzel, Arzu Ergintav, Johannes Borngräber, Dietmar Kissinger:
A 15-50GHz Multiplexer Circuit in 130nm SiGe BiCMOS Technology for Ultra-Wide Frequency Ramps in FMCW Radar. NORCAS 2018: 1-4- 2017
- [c10]Nick Rothbart, Klaus Schmalz, Johannes Borngräber, Selahattin Berk Yilmaz, Dietmar Kissinger, Heinz-Wilhelm Hübers
:
Towards breath gas detection with a 245 GHz gas sensor based on SiGe BiCMOS technology. IEEE SENSORS 2017: 1-3 - [c9]Frank Herzel, Arzu Ergintav, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger:
Design of a low-jitter wideband frequency synthesizer for 802.11ad wireless OFDM systems using a frequency sixtupler. ISCAS 2017: 1-4 - [c8]Arzu Ergintav, Frank Herzel, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger:
Low-power and low-noise programmable frequency dividers in a 130 nm SiGe BiCMOS technology. NEWCAS 2017: 105-108 - [c7]Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel:
A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. RWS 2017: 94-97 - 2016
- [c6]Klaus Schmalz, Johannes Borngräber, Selahattin Berk Yilmaz, Nick Rothbart, Dietmar Kissinger, Heinz-Wilhelm Hübers:
Gas spectroscopy with 245 GHz circuits in SiGe BiCMOS and Frac-N PLL for frequency ramps. IEEE SENSORS 2016: 1-3 - 2013
- [c5]R. Wang, Yaoming Sun, Mehmet Kaynak, Johannes Borngräber, B. Goettel, Stefan Beer, Johann-Christoph Scheytt:
122 GHz patch antenna designs by using BCB above SiGe BiCMOS wafer process for system-on-chip applications. PIMRC 2013: 1392-1396 - 2010
- [j3]Klaus Schmalz, Wolfgang Winkler, Johannes Borngräber, Wojciech Debski, Bernd Heinemann, Christoph Scheytt:
A Subharmonic Receiver in SiGe Technology for 122 ~ GHz Sensor Applications. IEEE J. Solid State Circuits 45(9): 1644-1656 (2010) - [j2]Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto:
A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. IEEE J. Solid State Circuits 45(9): 1678-1686 (2010)
2000 – 2009
- 2008
- [j1]Li Wang, Srdjan Glisic, Johannes Borngräber, Wolfgang Winkler, Christoph Scheytt:
A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar. IEEE J. Solid State Circuits 43(9): 1897-1908 (2008) - 2004
- [c4]Wolfgang Winkler, Johannes Borngräber, Hans Gustat, Falk Korndörfer:
60 GHz transceiver circuits in SiGe:C BiCMOS technology. ESSCIRC 2004: 83-86 - [c3]Wolfgang Winkler, Johannes Borngräber, Bernd Heinemann:
LC-oscillators above 100 GHz in silicon-based technology. ESSCIRC 2004: 131-134 - 2003
- [c2]Frank Herzel, Wolfgang Winkler, Johannes Borngräber:
An integrated 10 GHz quadrature LC-VCO in SiGe: C BiCMOS - technology for low-jitter applications. CICC 2003: 293-296
1990 – 1999
- 1999
- [c1]Wolfgang Winkler, Johannes Borngräber, Heide Erzgraeber, Ha. Erzgraber, Bernd Heinemann, Dieter Knoll, H. Jörg Osten, Michael Pierschel, Klaus Pressel, Peter Schley:
Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. CICC 1999: 351-358
Coauthor Index
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