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2020 – today
- 2024
[c16]Xuanqi Chen, Gan Liu, Wei Shi, Yuye Kang, Qiwen Kong, Yuxuan Wang, Rui Shao, Bich-Yen Nguyen, Gengchiau Liang, Kaizhen Han, Xiao Gong:
Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375K. VLSI Technology and Circuits 2024: 1-2- [c15]Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
First Demonstration of BEOL-Compatible 3D Vertical FeNOR. VLSI Technology and Circuits 2024: 1-2 - [c14]Gan Liu, Qiwen Kong, Zuopu Zhou, X. Ying, Chen Sun, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Yang Feng, Wei Shi, Bich-Yen Nguyen, N. Kai, Gengchiau Liang, Xiao Gong:
Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors. VLSI Technology and Circuits 2024: 1-2 - [c13]Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Gan Liu, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c12]Zijie Zheng, Jiawei Xie
, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong:
First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory. ICICDT 2023: 29-33 - [c11]Leming Jiao, Kaizhen Han, Zuopu Zhou, Zijie Zheng, Xiaolin Wang, Qiwen Kong, Yuye Kang, Jishen Zhang, Long Liu, Xiao Gong:
First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices. VLSI Technology and Circuits 2023: 1-2 - [c10]Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong:
First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving. VLSI Technology and Circuits 2023: 1-2 - [c9]Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong:
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. VLSI Technology and Circuits 2023: 1-2 - [c8]Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao Gong:
First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs. VLSI Technology and Circuits 2023: 1-2 - [c7]Zuopu Zhou, Leming Jiao, Qiwen Kong, Zijie Zheng, Kaizhen Han, Yue Chen, Chen Sun, Bich-Yen Nguyen, Xiao Gong:
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c6]Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang, Dong Zhang, Gan Liu, Long Liu, Xiao Gong:
BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application. ICICDT 2022: 5-7 - [c5]Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong:
Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V). VLSI Technology and Circuits 2022: 294-295 - [c4]Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong:
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection. VLSI Technology and Circuits 2022: 389-390 - [c3]Yue Chen, Gong Zhang, Jiuren Zhou, Zijie Zheng, Leming Jiao, Haibo Wang, Zuopu Zhou, Annie Kumar, Jishen Zhang, Yuxuan Wang, Qiwen Kong, Chen Sun, Xiao Gong:
First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit. VLSI Technology and Circuits 2022: 405-406 - [c2]Jishen Zhang, Haiwen Xu, Kian Hua Tan, Satrio Wicaksono, Qiwen Kong, Gong Zhang, Yue Chen, Chen Sun, Haibo Wang, Chao Wang, Zijie Zheng, Leming Jiao, Zuopu Zhou, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong:
First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform. VLSI Technology and Circuits 2022: 409-410 - 2021
- [c1]Jishen Zhang, Haiwen Xu, Gong Zhang, Yue Chen, Haibo Wang, Kian Hua Tan, Satrio Wicaksono, Chao Wang, Chen Sun, Qiwen Kong, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong:
First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection. VLSI Circuits 2021: 1-2
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