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Benoit Bakeroot
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2020 – today
- 2024
- [c13]M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico:
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS 2024: 1-6 - 2023
- [c12]Davide Favero
, A. Cavaliere, Carlo De Santi
, Matteo Borga
, W. Gonçalez Filho, Karen Geens
, Benoit Bakeroot
, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6 - 2022
- [c11]Olga Syshchyk
, Thibault Cosnier, Zheng-Hong Huang
, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens
, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot
:
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. ESSDERC 2022: 245-248 - [c10]M. Millesimo, Benoit Bakeroot
, Matteo Borga
, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico:
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS 2022: 10 - [c9]Davide Favero
, Carlo De Santi
, Kalparupa Mukherjee, Karen Geens
, Matteo Borga
, Benoit Bakeroot
, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1 - 2021
- [c8]Eliana Acurio
, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot
, Stefaan Decoutere:
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. IRPS 2021: 1-6 - 2020
- [c7]Kalparupa Mukherjee, Carlo De Santi
, Gaudenzio Meneghesso, Enrico Zanoni
, Matteo Meneghini, Shuzhen You, Karen Geens
, Matteo Borga, Benoit Bakeroot
, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c6]Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
, Andrea Natale Tallarico
, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga
, Elena Fabris
, Matteo Meneghini, Enrico Zanoni
, Gaudenzio Meneghesso, Juraj Priesol
, Alexander Satka
:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2018
- [c5]Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini
, Gaudenzio Meneghesso, Enrico Zanoni
, Peter Moens, Benoit Bakeroot
:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS 2018: 4 - 2017
- [c4]Arno Stockman, Michael J. Uren
, Alaleh Tajalli, Matteo Meneghini
, Benoit Bakeroot, Peter Moens:
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC 2017: 130-133 - 2015
- [j2]Ramses Pierco, Guy Torfs, Jochen Verbrugghe, Benoit Bakeroot
, Johan Bauwelinck
:
A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(7): 1726-1736 (2015) - [c3]Tian-Li Wu
, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot
, Steve Stoffels
, Guido Groeseneken
, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j1]Jie Hu, Steve Stoffels
, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot
, Guido Groeseneken
, Stefaan Decoutere:
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014)
2000 – 2009
- 2008
- [c2]Jordie Buyle, Vincent De Gezelle, Benoit Bakeroot
, Jan Doutreloigne:
A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers. ICECS 2008: 954-957 - 2007
- [c1]Yogesh Singh Chauhan
, François Krummenacher, Renaud Gillon
, Benoit Bakeroot
, Michel J. Declercq, Adrian M. Ionescu:
A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling. VLSI Design 2007: 177-182
Coauthor Index
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last updated on 2024-08-29 21:52 CEST by the dblp team
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