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ORCIDIRPS 2022: Dallas, TX, USA
- IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. IEEE 2022, ISBN 978-1-6654-7950-9
- Daniel Beckmeier, Jifa Hao, Jake Choi, Matt Ring
:
Revealing stresses for plasma induced damage detection in thick oxides. 1-6 - R. Zhang, J. Liu, Q. Li, S. Pidaparthi, A. Edwards, C. Drowley, Y. Zhang:
Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage. 1-8 - Alexander Hirler, Ulrich Abelein, M. Büttner, Ricarda Fischbach, Göran Jerke, Andreas Krinke, S. Simon:
Mission Profile Clustering Using a Universal Quantile Criterion. 1-9 - Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder:
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. 1-8 - Quan Tran, Ronald Gayhardt, Tin Nguyen, Arif Zaman:
Recent US West Coast Wildfire Disasters: Impact on the Reliability Assessment of Optical Transceivers. 1-4 - Md Raquibuzzaman, Md. Mehedi Hasan, Aleksandar Milenkovic, Biswajit Ray:
Layer-to-Layer Endurance Variation of 3D NAND Flash Memory. 1-5 - Houman Zahedmanesh, Ivan Ciofi, Odysseas Zografos, Kristof Croes, Mustafa Badaroglu:
System-Level Simulation of Electromigration in a 3 nm CMOS Power Delivery Network: The Effect of Grid Redundancy, Metallization Stack and Standard-Cell Currents. 1-7 - Ketul B. Sutaria, Minki Cho, Anisur Rahman, Jihan Standfest, Rahul Sharma, Swaroop Kumar Namalapuri, Shiv Gupta, Bahar Ajdari, Ricardo Ascázubi, Balkaran Gill:
Q&R On-Chip (QROC): A Unified, Oven-less and Scalable Circuit Reliability Platform. 1-6 - Kai Ni, Om Prakash, Simon Thomann, Zijian Zhao, Shan Deng, Hussam Amrouch:
Suppressing Channel Percolation in Ferroelectric FET for Reliable Neuromorphic Applications. 1-8 - Yinghong Zhao, Ki-Don Lee, Manisha Sharma, Joonah Yoon, Rakesh Ranjan, Md Iqbal Mahmud, Caleb Dongkyan Kwon, Myungsoo Yeo:
Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application. 1-4 - M. H. Lin, C. I. Lin, Y. C. Wang, Aaron Wang:
Redundancy Effect on Electromigration Failure Time in Power Grid Networks. 1-7 - Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura:
Short-Circuit Capability with GaN HEMTs : Invited. 1-7 - Jae-Gyung Ahn, Jim Wesselkamper, Ryan S. W. Baek, Ping-Chin Yeh, Jonathan Chang, Jennifer Wong, Xin Wu:
Reliability Analysis of Physically Unclonable Function by Using Aging Variability Simulation. 1 - Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve:
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. 1-7 - Om Prakash, Kai Ni, Hussam Amrouch:
Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing. 1-10 - Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi:
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena. 1-6 - J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. 1-6 - Masaharu Kobayashi:
Monolithic 3D Integration of Oxide Semiconductor FETs and Memory Devices for AI Acceleration (Invited). 1-6 - D. Nminibapiel, K. Joshi, R. Ramamurthy, L. Pantisano, Inanc Meric, Stephen Ramey:
Method to evaluate off-state breakdown in scaled Tri-gate technologies. 1-6 - Jian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, Walter Wohlmuth, Chih-Cherng Liao, Ching-Ho Li, Shoa-Chang Huang, Ke-Horng Chen:
Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. 2 - Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo:
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. 2 - Majed Valad Beigi, Sudhanva Gurumurthi, Vilas Sridharan:
Reliability, Availability, and Serviceability Challenges for Heterogeneous System Design. 2 - Theresia Knobloch, Yury Yu. Illarionov, Tibor Grasser:
Finding Suitable Gate Insulators for Reliable 2D FETs. 2 - Tahmida Islam, Junkyu Kim, Chris H. Kim, David Tipple, Michael Nelson, Robert Jin, Anis Jarrar:
A Calibration-Free Synthesizable Odometer Featuring Automatic Frequency Dead Zone Escape and Start-up Glitch Removal. 2-1 - Stefan Saroiu, Alec Wolman, Lucian Cojocar:
The Price of Secrecy: How Hiding Internal DRAM Topologies Hurts Rowhammer Defenses. 2 - Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar:
Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization. 2 - Pengpeng Ren, Xinfa Zhang, Junhua Liu, Runsheng Wang, Zhigang Ji, Ru Huang:
Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications. 3 - Artem Glukhov, Valerio Milo, Andrea Baroni, Nicola Lepri, Cristian Zambelli, Piero Olivo, Eduardo Pérez, Christian Wenger, Daniele Ielmini:
Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators. 3 - Jian Meng, Injune Yeo, Wonbo Shim, Li Yang, Deliang Fan, Shimeng Yu, Jae-Sun Seo:
Sparse and Robust RRAM-based Efficient In-memory Computing for DNN Inference. 3 - Patrick Fiorenza, Corrado Bongiorno, Angelo Alberto Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte:
SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs. 3 - Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser:
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. 3 - Emran K. Ashik, Sundar Babu Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, Woongje Sung, Ayman A. Fayed, Anant K. Agarwal, Bongmook Lee:
Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications. 3 - Pablo Saraza-Canflanca, Héctor Carrasco-Lopez, Andrés Santana-Andreo, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández:
A Smart SRAM-Cell Array for the Experimental Study of Variability Phenomena in CMOS Technologies. 3-1 - Tadeu Mota Frutuoso, Xavier Garros, Jose Lugo-Alvarez, Roméo Kom Kammeugne, L. D. M. Zouknak, Abygaël Viey, W. van den Daele, Philippe Ferrari, Fred Gaillard:
Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors. 3 - Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten:
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). 3 - Nicola Lepri, Artem Glukhov, Daniele Ielmini:
Mitigating read-program variation and IR drop by circuit architecture in RRAM-based neural network accelerators. 3 - Y. K. Chang, P. J. Liao, S. H. Yeong, Y.-M. Lin, J. H. Lee, C. T. Lin, Z. Yu, Wilman Tsai, Paul C. McIntyre:
The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics. 3 - Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe:
Investigation of reliability of NO nitrided SiC(1100) MOS devices. 3 - Yiming Qu, Yang Shen, Mingji Su, Jiwu Lu, Yi Zhao:
GHz C-V Characterization Methodology and Its Application for Understanding Polarization Behaviors in High-k Dielectric Films. 3 - P. Srinivasan, Fernando Guarin, Enkhbayasgalan Gantsog, Harish Krishnaswamy, Arun Natarajan:
Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologies. 4 - P. C. Chang, P. J. Liao, D. W. Heh, C. Lee, D. H. Hou, Elia Ambrosi, C. H. Wu, H. Y. Lee, J. H. Lee, Xinyu Bao:
Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector. 4 - Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt:
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. 4 - R. Aggarwal, L. Jiang, S. Patra, N. Lajo, Enamul Kabir, R. Kasim:
A Novel Approach for Assessing Impact of Temperature Hot-Spots on Chip-Package Interaction Reliability. 4 - Ikuo Suda, Ryo Kishida, Kazutoshi Kobayashi:
An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator Process. 4-1 - Kathy Wei Yan, Po-Yao Lin, Sheng-Liang Kuo:
Thermal Challenges for HPC 3DFabricTM Packages and Systems. 4 - H. Zheng, Y. S. Sun, J. L. Huang:
Impact of TSV on TDDB Performance of Neighboring FinFET with HK/IL Gate Stacking. 4 - Simon Van Beek, Kaiming Cai, Siddharth Rao, Ganesh Jayakumar, Sebastien Couet, Nico Jossart, Adrian Vaisman Chasin, Gouri Sankar Kar:
MTJ degradation in SOT-MRAM by self-heating-induced diffusion. 4 - Peter M. Asbeck, Sravya Alluri, Narek Rostomyan, Jefy Alex Jayamon:
Reliability of CMOS-SOI power amplifiers for millimeter-wave 5G: the case for pMOS (Invited). 4 - Milan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam-Sung Kim, Luca Larcher:
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. 4 - Aarti Rathi, Abhisek Dixit, P. Srinivasan, Oscar Huerta-Gonzalez, Fernando Guarin:
RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications. 4 - Bassel Ayoub, Stéphane Moreau, S. Lhostis, P. Lamontagne, H. Combeau, J. G. Mattei, Hélène Frémont:
New Method to Perform TDDB Tests for Hybrid Bonding Interconnects. 4 - Joycelyn Hai, Florian Cacho, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould, Jeremie Forest, Vincent Knopik, Xavier Garros:
Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications. 4 - Germain Bossu, Shafi Syed, S. Evseev, Joris Angelo Sundaram Jerome, Wafa Arfaoui, D. Lipp, Mahesh Siddabathula:
22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability. 4 - Lin Hou, Emmanuel Chery, Kristof Croes, Davide Tierno, Soon Aik Chew, Yangyin Chen, Peter Rakbin, Eric Beyne:
Reliability Investigation of W2W Hybrid Bonding Interface: Breakdown Voltage and Leakage Mechanism. 4 - Nicholas J. Pieper, Yoni Xiong, Alexandra Feeley, Dennis R. Ball, Bharat L. Bhuva:
Single-Event Latchup Vulnerability at the 7-nm FinFET Node. 5 - Tsunenobu Kimoto, Keita Tachiki, A. Iijima, Mitsuaki Kaneko:
Performance Improvement and Reliability Physics in SiC MOSFETs. 5 - Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini:
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. 5 - M. Hauser, P. Srinivasan, A. Vallett, R. Krishnasamy, Fernando Guarin, Dave Brochu, V. Pham, Byoung Min:
Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability. 5 - Navjeet Bagga, Kai Ni, Nitanshu Chauhan, Om Prakash, X. Sharon Hu, Hussam Amrouch:
Cleaved-Gate Ferroelectric FET for Reliable Multi-Level Cell Storage. 5-1 - Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten:
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. 5 - Andreas Martin:
Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited). 5 - Shudong Huang, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Jean-Jacques Hajjar, Elyse Rosenbaum:
A High Voltage Tolerant Supply Clamp for ESD Protection in a 45-nm SOI Technology. 5 - Marcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, Salvatore Cascino, Angelo Alberto Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini:
Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs. 5 - Sourabh Khandelwal, D. Bavi:
ASM-ESD - A comprehensive physics-based compact model for ESD Diodes. 5 - Vinayak Bharat Naik, J. H. Lim, Kazutaka Yamane, J. Kwon, Behin-Aein B., N. L. Chung, S. K, R. Chao, C. Chiang, Y. Huang, L. Pu, Yuichi Otani, Suk Hee Jang, Nivetha Balasankaran, Wah-Peng Neo, T. Ling, Jia Wen Ting, Hongsik Yoon, Johannes Müller, Bert Pfefferling, Oliver Kallensee, Thomas Merbeth, Chim Seng Seet, J. Wong, Y. S. You, Steven Soss, T. H. Chan, S. Y. Siah:
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities. 6 - Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi:
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions. 6-1 - Yong Liu, Pengpeng Ren, Da Wang, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang:
New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology. 6 - Nam-Hyun Lee, Sunhang Lee, S.-H. Kim, G.-J. Kim, K. W. Lee, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae:
Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology. 6 - Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken:
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. 6 - Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer:
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. 6 - M. Monishmurali, Nagothu Karmel Kranthi, Gianluca Boselli, Mayank Shrivastava:
Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices. 6 - Munehiro Tada:
NanoBridge Technology for Novoaltile FPGA and Memory Applications : (Invited). 6 - Laura Zunarelli, Susanna Reggiani, Elena Gnani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli:
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells. 6 - Da Wang, Yong Liu, Pengpeng Ren, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang:
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. 7 - Wei-Chih Chien, Lynne M. Gignac, Y. C. Chou, C. H. Yang, N. Gong, H. Y. Ho, C. W. Yeh, H. Y. Cheng, W. Kim, I. T. Kuo, E. K. Lai, C. W. Cheng, L. Buzi, A. Ray, Chia-Sheng Hsu, Robert L. Bruce, Matthew BrightSky, H. L. Lung:
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme. 7-1 - Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Thermal-Neutron SER Mitigation by Cobalt-Contact in 7 nm Bulk-FinFET Technology. 7 - Cheng-Lin Sung, Sheng-Ting Fan, Hang-Ting Lue, Wei-Chen Chen, Pei-Ying Du, Teng-Hao Yeh, Keh-Chung Wang, Chih-Yuan Lu:
First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures. 7 - Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier:
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. 7 - Amartya Ghosh, Osama O. Awadelkarim, Jifa Hao, Samia A. Suliman, Xinyu Wang:
Comparison of AC and DC BTI in SiC Power MOSFETs. 7 - Riccardo Mariani, Karl Greb:
Recent Advances and Trends on Automotive Safety : (invited). 7 - Chu Yan, Yaru Ding, Yiming Qu, Liang Zhao, Yi Zhao:
Universal Hot Carrier Degradation Model under DC and AC Stresses. 7 - Yoni Xiong, Alexandra Feeley, Nicholas J. Pieper, Dennis R. Ball, Balaji Narasimham, John Brockman, N. A. Dodds, S. A. Wender, Shi-Jie Wen, Rita Fung, Bharat L. Bhuva:
Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment. 7 - Armen Kteyan, Valeriy Sukharev, Y. Yi, Chris H. Kim:
Novel methodology for temperature-aware electromigration assessment in on-chip power grid: simulations and experimental validation (Invited). 8 - Eduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-François Nodin, Damien Querlioz, Jean-Michel Portal, Elisa Vianello:
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations. 8-1 - O. Varela Pedreira, Melina Lofrano, Houman Zahedmanesh, Philippe J. Roussel, Marleen H. van der Veen, Veerle Simons, Emmanuel Chery, Ivan Ciofi, Kris Croes:
Assessment of critical Co electromigration parameters. 8 - Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour:
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. 8 - L. Fursin, P. Losee, Akin Akturk:
Investigation of Terrestrial Neutron Induced Failure Rates in Silicon Carbide JFET Based Cascode FETs. 8 - Jeffrey Zhang, Antai Xu, Daniel Gitlin:
A Method of Developing Qualification Plans for Board Products. 8 - Hiroshi Miki, M. Sagawa, Y. Mori, T. Murata, K. Kinoshita, K. Asaka, T. Oda:
Accurate screening of defective oxide on SiC using consecutive multiple threshold-voltage measurements. 8 - Vincent Huard, Francois Jacquet, Souhir Mhira, Lionel Jure, Olivier Montfort, Mathieu Louvat, L. Zaia, F. Bertrand, E. Acacia, O. Caffin, H. Belhadj, O. Durand, Nils Exibard, Vincent Bonnet, A. Charvier, Paolo Bernardi, Riccardo Cantoro:
Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety mode. 8 - Md. Asaduz Zaman Mamun, Muhammad Ashraful Alam:
Reduced Relative Humidity (RH) Enhances the Corrosion-Limited Lifetime of Self-Heated IC: Peck's equation Generalized. 8 - Yu-Lin Chu, Hsi-Yu Kuo, Hung-Da Dai, Kuan-Hung Chen, Pei-Jung Lin, Chun-Ting Liao, Ta-Chun Lin, Ming Feng, Swercy Chiu, Victor Liang:
New RC-Imbalance Failure Mechanism of Well Charging Damage and The Implemented Rule. 8 - Shou-En Liu, Jian Li, Deepak Nayak, Amit Marathe, Kaushik Balamukundhan, Vishal Gosavi, Ajaykumar Prajapati, Baha Kilic, Mengzhi Pang, Arpit Mittal:
Reliability Qualification Challenges of SOCs in Advanced CMOS Process Nodes (Invited). 8 - Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf:
Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. 9 - K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin, Z.-F. Lou, C.-Y. Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, H.-C. Tseng, C.-C. Wang, W.-C. Ray, T.-H. Hou, T.-C. Chen, C.-S. Chang, Min-Hung Lee:
Correlation between Access Polarization and High Endurance (~ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2. 9-1 - Artemisia Tsiara, Alicja Lesniewska, Philippe Roussel, Srinivasan Ashwyn Srinivasan, Mathias Berciano, Marko Simicic, Marianna Pantouvaki, Joris Van Campenhout, Kristof Croes:
Degradation mechanisms in Germanium Electro-Absorption Modulators. 9 - Kuan-Ting Ho, Daniel Monteiro Diniz Reis, Karla Hiller:
Defect-controlled Resistance Degradation of Sputtered Lead Zirconate Titanate Thin Films. 10 - William Harris, Allen Gu, Masako Terada:
Putting AI to Work: A Practical and Simple Application to Improve 3D X-ray FA. 10 - M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico:
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. 10 - Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar:
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. 10-1 - Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf:
Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. 10 - Ernest Y. Wu, Baozhen Li:
Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics. 10 - Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang:
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery. 10 - Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant:
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. 10 - Hyeokjae Lee, Sanggi Ko, Ho-Joon Suh, Gina Jeong, Jung-Han Yeo, Hye-Min Park, Hee-Kyeong Kim, Jong-Kwan Kim, Sung S. Chung, Youngboo Kim, Jisun Park, Hyungsoon Shin:
Progressive Degradation Without Physical Failure During Mounting Due to Soft Overstress in Compound HBT for RF, Mobile, and Automotive Applications. 10 - Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Modeling Hot-Electron Trapping in GaN-based HEMTs. 10 - Ivana Kovacevic-Badstuebner, Salvatore Race, Thomas Ziemann, Shweta Tiwari, Ulrike Grossner, Elena Mengotti, Enea Bianda, Joni P. A. Jormanainen:
Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages. 10 - Bikram Kishore Mahajan, Yen-Pu Chen, Muhammad Ashraful Alam, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy:
A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors. 10 - Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu:
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. 10 - Asifa Amin, Aarti Rathi, Sujit K. Singh, Abhisek Dixit, Oscar Huerta-Gonzalez, P. Srinivasan, Fernando Guarin:
Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications. 11 - Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho:
New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. 11 - Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer:
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. 11 - Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert:
Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. 11 - P. S. Chen, Y. W. Lee, D. S. Huang, S. C. Chen, C. F. Cheng, J. H. Lee, Jun He:
AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum Methodology. 11 - Marcello Cioni, Nicolò Zagni, Alessandro Chini:
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications. 11 - Seongkyung Kim, Ukjin Jung, Seungjin Choo, Kihyun Choi, Tae-Jin Chung, Shin-Young Chung, Euncheol Lee, Juhun Park, Deokhan Bae, Myungyoon Um:
Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic Technology. 11 - Ned Cahoon, P. Srinivasan, Fernando Guarin:
6G Roadmap for Semiconductor Technologies: Challenges and Advances. 11 - Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng:
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. 11-1 - Makoto Nagata:
Exploring Fault Injection Attack Resilience of Secure IC Chips : Invited Paper. 11 - Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour:
DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited). 11 - Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. 11 - Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt:
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. 12-1 - Jian Liu, Nathaniel Carels, Nathaniel Peachey:
Characterization and Analysis of RF Switches in SOI Technology for ESD Protection. 13-1 - Takuya Wadatsumi, Kohei Kawai, Rikuu Hasegawa, Takuji Miki, Makoto Nagata, Kikuo Muramatsu, Hiromu Hasegawa, Takuya Sawada, Takahito Fukushima, Hisashi Kondo:
Voltage Surges by Backside ESD Impacts on IC Chip in Flip Chip Packaging. 14-1 - Zhihua Zhu, Songyan Wang, Xiaomei Fan:
A Novel Latch-Up-Immune DDSCR Used for 12 V Applications. 15-1 - M. Hamid, K. O'Connell, J. Bielick, J. Bennett, E. Campbell, A. Alfoqaha:
Numerical Simulation and Characterization of PCB Warpage. 16-1 - Sushil Kumar, Dhairya Singh Arya, Manu Garg, Pushpapraj Singh:
Adhesion-Limit in Refractory Transition Metal (Mo) Contact Relay Operation at 300 °C - Avoiding Overestimation for Modern ICs. 17-1 - Junjun Zhang, Fanyu Liu, Bo Li, Yang Huang, Siyuan Chen, Yuchong Wang, Jiajun Luo, Jing Wan:
Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology. 18-1 - R. L. Torrisi, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, M. Palmisciano, Elisa Vitanza:
Failure Analysis of AlGaN/GaN Power HEMTs through an innovative sample preparation approach. 19-1 - Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. 20-1 - Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo:
Impact of Gate Offset on PBTI of p-GaN Gate HEMTs. 21-1 - Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang:
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses. 22-1 - Nitanshu Chauhan, Chirag Garg, Kai Ni, Amit Kumar Behera, Sarita Yadav, Shashank Banchhor, Navjeet Bagga, Avirup Dasgupta, Arnab Datta, Sudeb Dasgupta, Anand Bulusu:
Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI. 23-1 - Rishabh Kishore, Kavita Vishwakarma, Arnab Datta:
Effect of Non-identical Annealing on the Breakdown Characteristics of Sputtered IGZO Films. 24-1 - M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo:
Frequency dependant gate oxide TDDB model. 25-1 - Wen Liu, Dimitris P. Ioannou, Johnatan Kantarovsky, Byoung Min, Tanya Nigam:
Robust Off-State TDDB Reliability of n-LDMOS. 26-1 - Andrea Vici, Robin Degraeve, João Pedro Bastos, Philippe Roussel, Ingrid De Wolf:
Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks. 27-1 - C. H. Yang, P. S. Chien, Y. S. Cho, W. S. Hung:
A Realistic Modeling Approach To Explain the Physical Mechanism of TDDB For Automotive Grade-Zero Applications. 28-1 - Juwon Lee, Junho Seo, Jeonghun Nam, YongLae Kim, Ki-Whan Song, Jai Hyuk Song, Woo Young Choi:
Electric Field Impact on Lateral Charge Diffusivity in Charge Trapping 3D NAND Flash Memory. 29-1 - Y. H. Liu, Y. S. Yang, T. C. Zhan, M. Hu, Z. J. Liu, W. Lin, A. C. Liu, Y. C. Hsu:
An Abnormal Negative Temperature Dependence of Erasestate Vt Retention Shift in 3-D NAND Flash Memories. 30-1 - Yunjie Fan, Zhiqiang Wang, Shengwei Yang, Kun Han, Yi He:
Investigation of Retention Characteristics in a Triple-level Charge Trap 3D NAND Flash Memory. 31-1 - Ravi Achanta, V. McGahay, S. Boffoli, C. Kothandaraman, J. Gambino:
High-k MIM dielectric reliability study in 65nm node. 32-1 - Wen Ma, Tung Thanh Hoang, Brian Hoskins, Matthew W. Daniels, Jabez J. McClelland, Yutong Gao, Gina C. Adam, Martin Lueker-Boden:
Effect of OTS Selector Reliabilities on NVM Crossbar-based Neuromorphic Training. 35-1 - James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. 36-1 - S. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, Hong Yang, Zhenhua Wu, Yongliang Li, J. F. Gao, Anyun Du, Junfeng Li, Jun Luo, Wenwu Wang, Huaxiang Yin:
Investigation on Contacts Thermal Stability for 3D Sequential Integration. 37-1 - Evelyn Landman, Alex Burlak, C. Nir Sever, Marc Hutner:
Applying Universal Chip Telemetry to Detect Latent Defects and Aging in Advanced Electronics. 38-1 - Zheng Ke, Sachin Goyal, Solomon Arputharaj, Wendy Wee Yee Lau, Tan Tam Lyn, Lim Dau Fatt, Pandurangan Madhavan, Chandrasekar Venkataramani:
Pre-O2 treatment for LNA gate oxide leakage improvement. 39-1 - Bu-Il Nam, Young-Ha Choi, Sungki Hong, Ki-Young Dong, Wontaeck Jung, Sang-Won Park, Soon-Yong Lee, Dooyeun Jung, Byoung-Hee Kim, Eun-Kyoung Kim, Ki-Whan Song, Jai Hyuk Song, Woo Young Choi:
Novel Electrical Detection Method for Random Defects on Peripheral Circuits in NAND Flash Memory. 40-1 - Tianfang Peng, Zheng You:
An Analytical Model of Transient Response of MEMS under High-G shock for Reliability Assessment. 41-1 - Tianfang Peng, Zheng You:
The Optimal Shape of MEMS Beam Under High-G Shock Based on a Probabilistic Fracture Model. 42-1 - Yu-Hsing Cheng, Michael Cook, Derryl D. J. Allman:
NBTI Characterization with in Situ Poly Heater. 43-1 - T. L. Tan, C. W. Eng, H. Xu, J. M. Soon, E. Ebard, Mahesh Siddabathula, B. F. Phoong, K. H. Poh, M. Prabhu, X.-L. Zhao, J. M. Koo, K. Cho, G.-W. Zhang:
A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures. 45-1 - Alexander Teverovsky:
Infant Mortality and Wear-Out Failures in Polymer and MnO2 Tantalum Capacitors. 46-1 - Alison Erlene Viegas, Konstantinos Efstathios Falidas, Tarek Nadi Ismail Ali, Kati Kühnel, Raik Hoffmann, Clemens Mart, Malte Czernohorsky, Johannes Heitmann:
Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies. 47-1 - Xinqian Chen, Fei Hou, Zuoyuan Dong, Yuxin Zhang, Chaolun Wang, Fang Liang, Feibo Du, Zhiwei Liu, Xing Wu:
Nanoscale Analysis of Breakdown Induced Crack Propagation in DTSCR Devices. 48-1 - Kwang Sing Yew, Ran Xing Ong, Hin Kiong Yap, Wanbing Yi, Jacquelyn Phang, R. Chockalingam, Juan Boon Tan:
Insights on Inter-metal Reliability Assessment of High Voltage Interconnects. 49-1 - Yaru Ding, Wei Liu, Yiming Qu, Liang Zhao, Yi Zhao:
Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC Stress. 50-1 - Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz:
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. 51-1 - Bikram Kishore Mahajan, Yen-Pu Chen, Ulisses Alberto Heredia Rivera, Rahim Rahimi, Muhammad Ashraful Alam:
Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors. 52-1 - Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Accelerator-Based Thermal-Neutron Beam by Compact and Low-Cost Moderator for Soft-Error Evaluation in Semiconductor Devices. 53-1 - K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, Takaho Tanigawa, Shoji Ikeda, Takamitsu Shinada, Hiroki Koike, Tetsuo Endoh, T. Makino, Takeshi Ohshima:
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability. 54-1 - Himanshu Diwakar, Karansingh Thakor, Souvik Mahapatra:
Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs. 55-1 - Nilotpal Choudhury, Ayush Ranjan, Souvik Mahapatra:
Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress. 56-1 - Salvatore Cimino, J. Singh, Jeffrey B. Johnson, W. Zheng, Y. Chen, W. Liu, P. Srinivasan, O. Gonzales, M. Hauser, Matthew Koskinen, K. Nagahiro, Y. Liu, B. Min, Tanya Nigam, N. Squib:
Optimized LDMOS Offering for Power Management and RF Applications. 57-1 - Md Iqbal Mahmud, Rakesh Ranjan, Ki-Don Lee, Pavitra Ramadevi Perepa, Caleb Dongkyun Kwon, Seungjin Choo, Kihyun Choi:
Reverse Body Bias Dependence of HCI Reliability in Advanced FinFET. 58-1 - Luca Pirro, P. Liebscher, C. Brantz, M. Kessler, H. Herzog, Olaf Zimmerhackl, R. Jain, E. Ebrand, K. Gebauer, Michael Otto, Alban Zaka, Jan Hoentschel:
Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance. 59-1 - Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang:
SiGe Gate-All-around Nanosheet Reliability. 60-1 - Mario Santo Alessandrino, Beatrice Carbone, Francesco Cordiano, Bruna Mazza, Alfio Russo, W. Coco, Massimo Boscaglia, A. Di Salvo, A. Lombardo, D. Scarcella, Elisa Vitanza, Patrick Fiorenza:
Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer. 61-1 - Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Justin Lynch, Yafei Liu, Balaji Raghothamachar, Minseok Kang, Anant Agarwal, Nadeemullah Mahadik, Robert Stahlbush, Michael Dudley, Woongje Sung:
Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures. 62-1 - Junji Senzaki, Ryoji Kosugi, Keiko Masumoto, Takeshi Mitani, Takeharu Kuroiwa, Hiroshi Yamaguchi:
Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs. 63-1 - Masato Shiozaki, Takashi Sato:
Characteristic Degradation of Power MOSFETs by X-Ray Irradiation and Their Recovery. 64-1 - Robert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, Woongje Sung, Anant K. Agarwal:
Defects in 4H-SiC epilayers affecting device yield and reliability. 65-1 - Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe:
Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. 66-1
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