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2020 – today
- 2023
[c8]Nick Zhang, Young Suk Kim, Peter Hsu, Samsoo Kim, Derek Tao, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li, Tsung-Yung Jonathan Chang:
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology. VLSI Technology and Circuits 2023: 1-2- 2021
- [j6]Tsung-Yung Jonathan Chang, Yen-Huei Chen
, Wei-Min Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li:
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. IEEE J. Solid State Circuits 56(1): 179-187 (2021) - 2020
- [c7]Jonathan Chang, Yen-Huei Chen, Gary Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li:
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. ISSCC 2020: 238-240
2010 – 2019
- 2016
- [j5]Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(7): 1023-1032 (2016) - [c6]Amit Jha, Ali Ahmadi, Sandeep Kshattry, T. Cao, K. Liao, Geoffrey Yeap, Yiorgos Makris, Kenneth K. O:
-197dBc/Hz FOM 4.3-GHz VCO Using an addressable array of minimum-sized nmos cross-coupled transistor pairs in 65-nm CMOS. VLSI Circuits 2016: 1-2 - [c5]Seung Chul Song, J. Xu, D. Yang, K. Rim, P. Feng, Jerry Bao, J. Zhu, Joseph Wang, G. Nallapati, Mustafa Badaroglu, Praneeth Narayanasetti, B. Bucki, Jeff Fischer, Geoffrey Yeap:
Unified Technology Optimization Platform using Integrated Analysis (UTOPIA) for holistic technology, design and system co-optimization at <= 7nm nodes. VLSI Circuits 2016: 1-2 - 2015
- [j4]Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(6): 1538-1545 (2015) - [j3]Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. IEEE Trans. Very Large Scale Integr. Syst. 23(11): 2748-2752 (2015) - [c4]N. N. Mojumder, Seung Chul Song, K. Rim, J. Xu, Joseph Wang, J. Zhu, Milena Vratonjic, K. Lin, Martin Saint-Laurent, Paul Bassett, Geoffrey Yeap:
Transistor-interconnect mobile system-on-chip co-design method for holistic battery energy minimization. VLSIC 2015: 84- - [c3]Seung Chul Song, J. Xu, N. N. Mojumder, K. Rim, D. Yang, Jerry Bao, J. Zhu, Joseph Wang, Mustafa Badaroglu, V. Machkaoutsan, Praneeth Narayanasetti, B. Bucki, Jeff Fischer, Geoffrey Yeap:
Holistic technology optimization and key enablers for 7nm mobile SoC. VLSIC 2015: 198- - 2014
- [j2]Jason Woo, Po-Yen Chien, Frank Yang, Seung Chul Song, P. R. Chidi Chidambaram, Joseph Wang, Geoffrey Yeap:
Improved device variability in scaled MOSFETs with deeply retrograde channel profile. Microelectron. Reliab. 54(6-7): 1090-1095 (2014) - [c2]Geoffrey Yeap:
Technology-design-manufacturing co-optimization for advanced mobile SoCs. CICC 2014: 1-8 - 2011
- [j1]Seung Chul Song, M. Abu-Rahma, Geoffrey Yeap:
FinFET based SRAM bitcell design for 32 nm node and below. Microelectron. J. 42(3): 520-526 (2011) - 2010
- [c1]Ming-Ta Yang, Yang Du, Charles Teng, Tony Chang, Eugene Worley, Ken Liao, You-Wen Yau, Geoffrey Yeap:
BSIM4-based lateral diode model for LNA co-designed with ESD protection circuit. ISQED 2010: 87-91
Coauthor Index
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