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2020 – today
- 2022
[c5]Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Mei-Chen Chuang, Rawan Naous, Chao-Kai Chuang, Takeshi Hashizume, Dar Sun, Chia-Fu Lee, Kerem Akarvardar, Saman Adham, Tan-Li Chou, Mahmut Ersin Sinangil, Yih Wang
, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations. ISSCC 2022: 1-3- 2021
- [j2]Mahmut E. Sinangil, Burak Erbagci, Rawan Naous, Kerem Akarvardar, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang:
A 7-nm Compute-in-Memory SRAM Macro Supporting Multi-Bit Input, Weight and Output and Achieving 351 TOPS/W and 372.4 GOPS. IEEE J. Solid State Circuits 56(1): 188-198 (2021) - [c4]Yu-Der Chih, Po-Hao Lee, Hidehiro Fujiwara, Yi-Chun Shih, Chia-Fu Lee, Rawan Naous, Yu-Lin Chen, Chieh-Pu Lo, Cheng-Han Lu, Haruki Mori, Wei-Cheng Zhao, Dar Sun, Mahmut E. Sinangil, Yen-Huei Chen, Tan-Li Chou, Kerem Akarvardar, Hung-Jen Liao, Yih Wang, Meng-Fan Chang, Tsung-Yung Jonathan Chang:
An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications. ISSCC 2021: 252-254 - 2020
- [c3]Qing Dong, Mahmut E. Sinangil, Burak Erbagci, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang:
15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications. ISSCC 2020: 242-244
2010 – 2019
- 2016
- [c2]Hidehiro Fujiwara, Yen-Huei Chen, Chih-Yu Lin, Wei-Cheng Wu, Dar Sun, Shin-Rung Wu, Hung-Jen Liao, Jonathan Chang:
A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications. A-SSCC 2016: 185-188 - 2015
- [c1]Hidehiro Fujiwara, Li-Wen Wang, Yen-Huei Chen, Kao-Cheng Lin, Dar Sun, Shin-Rung Wu, Jhon-Jhy Liaw, Chih-Yung Lin, Mu-Chi Chiang, Hung-Jen Liao, Shien-Yang Wu, Jonathan Chang:
17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies. ISSCC 2015: 1-3 - 2012
- [j1]Yen-Huei Chen, Shao-Yu Chou, Quincy Li, Wei-Min Chan, Dar Sun, Hung-Jen Liao, Ping Wang, Meng-Fan Chang, Hiroyuki Yamauchi:
Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM. IEEE J. Solid State Circuits 47(4): 969-980 (2012)
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