"Total-dose-induced edge effect in SOI NMOS transistors with different layouts."

Jie Liu et al. (2010)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2009.09.003

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LiuZLKESH10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LiuZLKESH10
Jie Liu, Jicheng Zhou, Hongwei Luo, Xuedong Kong, Yunfei En, Qian Shi, Yujuan He:
Total-dose-induced edge effect in SOI NMOS transistors with different layouts. Microelectron. Reliab. 50(1): 45-47 (2010)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.