Cited By
View all- Sadi TBadami OGeorgiev VAsenov A(2019)Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMsLarge-Scale Scientific Computing10.1007/978-3-030-41032-2_49(429-437)Online publication date: 10-Jun-2019
We present a new parasitic bipolar junction transistor (BJT) enhanced silicon on insulator (SOI) laterally double diffused metal oxide semiconductor (LDMOS), called BJT enhanced LDMOS (BE-LDMOS). The proposed device utilizes the parasitic BJT present in ...
Graphical abstractI-V characteristics of the anti-parallel connected Ag/TiOx/Ti diodes selector in series with the Cu/HfO2/Pt bipolar RRAM cell.Display Omitted A new bipolar selector based on anti-parallel connected diodes is proposed.Anti-parallel ...
In this paper, the Transient Voltage Suppressor (TVS) is provided as the selection device for bipolar RRAM crossbar array applications. Simulation results suggest that, by using the TVS as a selection device, the sneak current in the crossbar array can ...
Springer-Verlag
Berlin, Heidelberg
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