article

Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)

Authors:

F. BoulangerAuthors Info & Claims

Microelectronic Engineering, Volume 86, Issue 7-9

Pages 1609 - 1614

https://doi.org/10.1016/j.mee.2009.03.100

Published: 01 July 2009 Publication History

Abstract

This paper provides a systematic study of mobility performance and Bias Temperature Instabilities (BTI) reliability in advanced dielectrics stacks. By studying a large variety of dielectric stacks we clearly demonstrate that mobility performance, interface defects Nit and Negative BTI reliability are strongly correlated. All are affected by nitrogen species N which is clearly identified as the main mobility killer when it reaches unintentionally the Si interface during the deposition of nitrided gates or the nitridation steps.

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Cited By

Garros XSubirats AReimbold GGaillard FDiouf CFederspiel XHuard VRafik M(2018)A new method for quickly evaluating reversible and permanent components of the BTI degradation2018 IEEE International Reliability Physics Symposium (IRPS)10.1109/IRPS.2018.8353688(P-RT.6-1-P-RT.6-5)Online publication date: 11-Mar-2018
https://dl.acm.org/doi/10.1109/IRPS.2018.8353688

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Published In

cover image Microelectronic Engineering

Microelectronic Engineering Volume 86, Issue 7-9

July, 2009

473 pages

ISSN:0167-9317

Issue’s Table of Contents

Copyright © Elsevier B.V. © 2009.

Publisher

Elsevier Science Ltd.

United Kingdom

Publication History

Published: 01 July 2009

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Cited By

Garros XSubirats AReimbold GGaillard FDiouf CFederspiel XHuard VRafik M(2018)A new method for quickly evaluating reversible and permanent components of the BTI degradation2018 IEEE International Reliability Physics Symposium (IRPS)10.1109/IRPS.2018.8353688(P-RT.6-1-P-RT.6-5)Online publication date: 11-Mar-2018
https://dl.acm.org/doi/10.1109/IRPS.2018.8353688

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