research-article

Capacitance model of submicron MESFET under illumination

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B. K. Mishra,

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ICWET '10: Proceedings of the International Conference and Workshop on Emerging Trends in Technology

Pages 822 - 827

https://doi.org/10.1145/1741906.1742097

Published: 26 February 2010 Publication History

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Abstract

MESFET is one of the emerging optical electronic devices for optical detection and control. The paper presents the capacitor model of the GaAs MESFET. The model of the device is developed in Matlab and explains the dependence of C_gd and C_gs on biasing voltage and illumination. This model is suitable for computer aided design of Integrated circuits using MESFET. The variations of gate-to-drain and gate-to-source capacitances (C_gd and C_gs) for a wide range of optical powers for different biasing conditions have been simulated. The study reveals that the capacitances can be controlled by incident optical power. The device is expected to find useful application in process monitoring and sensitivity analysis as well as in photodetection

References

[1]

B. K. Mishra, "Computer Aided modeling of solidstate photodetectors, Ph.D thesis Birla institute of technology", Mesra, Ranchi, 1995.

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[2]

Michael Shur, "GaAs Devices and Circuits", Plenum Press, NewYork, 1987.

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[3]

Nandita Saha Roy, B. B. Pal and R. U. Khan, "Frequency dependent characteristics of an ion implanted GaAs MESFET with opaque gate under illumination" Journal of Lightwave Technology, Vol. 18, Issue 2, Feb 2000, pp. 221--229

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[4]

Shubha, B. B. Pal and R. U. Khan, "Optically controlled Ion-Implanted GaAs MESFET Characteristic with Opaque Gate", Journal on Electron Devices, Vol. 45, January 1998.

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Vicentiu I. Cojocaru and Thomas J. Brazil, "Modeling the gate capacitances of MESFET's and HEMTs from low-frequency C-V measurements", Proc. of 23rd European Microwave Conf.(October 1993), pp. 511--514.

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Capacitance model of submicron MESFET under illumination
1. Mathematics of computing
  1. Mathematical software

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ICWET '10: Proceedings of the International Conference and Workshop on Emerging Trends in Technology

February 2010

1070 pages

ISBN:9781605588124

DOI:10.1145/1741906

Program Chair:
B. K. Mishra

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Published: 26 February 2010

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ICWET '10: International Conference and Workshop on Emerging Trends in Technology

February 26 - 27, 2010

Maharashtra, Mumbai, India

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2D modeling of MESFET under illumination

Effect of Intensity Modulated Optical Illumination on the Y Parameters of the GaAs MESFET

Modeling of MESFET with Gaussian profile active region under illumination

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