Nanometer-scale standard cell library for enhanced redundant via1 insertion rate
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- Nanometer-scale standard cell library for enhanced redundant via1 insertion rate
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Design of a practical nanometer-scale redundant via-aware standard cell library for improved redundant via1 insertion rate
Despite the rapid advances in process technology, via failure is still problematic in nanometer-scale semiconductor manufacturing. Adding redundant vias is a typical approach for improving yield and reliability. Cell-based design methodologies are ...
Post-layout Redundant Via Insertion Approach Considering Multiple Via Configuration
Yield loss caused by via failures is unacceptably high in many semiconductor manufacturing processes. Redundant via insertion (RVI) is a typical approach for improving manufacturing competitiveness. The double-via insertion in concurrent routing or post-...
Full-Chip Routing Considering Double-Via Insertion
As the technology node advances into the nanometer era, via-open defects are one of the dominant failures due to the copper cladding process. To improve via yield and reliability, redundant-via insertion is a highly recommended technique proposed by ...
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- General Chairs:
- David Atienza,
- Yuan Xie,
- Program Chairs:
- Jose L. Ayala,
- Ken Stevens
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- IEEE CEDA
- IEEE CASS
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Association for Computing Machinery
New York, NY, United States
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