research-article

Spin-transfer torque magnetic random access memory (STT-MRAM)

Authors:

Dmytro Apalkov,

Alexey Khvalkovskiy,

Vladimir Nikitin,

Alexander Driskill-Smith,

Mohamad KrounbiAuthors Info & Claims

ACM Journal on Emerging Technologies in Computing Systems (JETC), Volume 9, Issue 2

Article No.: 13, Pages 1 - 35

https://doi.org/10.1145/2463585.2463589

Published: 29 May 2013 Publication History

Abstract

Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes. STT-MRAM features fast read and write times, small cell sizes of 6F² and potentially even smaller, and compatibility with existing DRAM and SRAM architecture with relatively small associated cost added. STT-MRAM is essentially a magnetic multilayer resistive element cell that is fabricated as an additional metal layer on top of conventional CMOS access transistors. In this review we give an overview of the existing STT-MRAM technologies currently in research and development across the world, as well as some specific discussion of results obtained at Grandis and with our foundry partners. We will show that in-plane STT-MRAM technology, particularly the DMTJ design, is a mature technology that meets all conventional requirements for an STT-MRAM cell to be a nonvolatile solution matching DRAM and/or SRAM drive circuitry. Exciting recent developments in perpendicular STT-MRAM also indicate that this type of STT-MRAM technology may reach maturity faster than expected, allowing even smaller cell size and product introduction at smaller nodes.

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Index Terms

Spin-transfer torque magnetic random access memory (STT-MRAM)
1. Hardware
  1. Integrated circuits
    1. Semiconductor memory

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Published In

cover image ACM Journal on Emerging Technologies in Computing Systems

ACM Journal on Emerging Technologies in Computing Systems Volume 9, Issue 2

Special issue on memory technologies

May 2013

133 pages

ISSN:1550-4832

EISSN:1550-4840

DOI:10.1145/2463585

Issue’s Table of Contents

Copyright © 2013 ACM.

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ACM Journals for the Design of Smart and Connected Systems

Publication History

Published: 29 May 2013

Accepted: 01 October 2011

Revised: 01 October 2011

Received: 01 June 2011

Published in JETC Volume 9, Issue 2

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Yang CZou SChen XGao JLiu WYang MXu JKang JBu WZheng KCui YLuo J(2024)The fabrication of spin transfer torque-based magnetoresistive random access memory cell with ultra-low switching powerJapanese Journal of Applied Physics10.35848/1347-4065/ad38c663:5(05SP10)Online publication date: 14-May-2024
https://doi.org/10.35848/1347-4065/ad38c6
Liu CKurokawa YHashimoto NTanaka TYuasa H(2024) Biquadratic magnetic coupling effect in CoPt/Cr/Fe 90 Co 10 orthogonal structures Japanese Journal of Applied Physics10.35848/1347-4065/ad0e2863:2(02SP32)Online publication date: 4-Jan-2024
https://doi.org/10.35848/1347-4065/ad0e28
Neilo ABakurskiy SKlenov NSoloviev IKupriyanov M(2024)Spin-Valve-Controlled Triggering of SuperconductivityNanomaterials10.3390/nano1403024514:3(245)Online publication date: 23-Jan-2024
https://doi.org/10.3390/nano14030245
Lu ZCao QJiang HChen YYao JPan A(2024)FluidKV: Seamlessly Bridging the Gap between Indexing Performance and Memory-Footprint on Ultra-Fast StorageProceedings of the VLDB Endowment10.14778/3648160.364817717:6(1377-1390)Online publication date: 1-Feb-2024
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