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Design of heterogeneously-integrated memory system with storage class memories and NAND flash memories

Published: 21 January 2019 Publication History

Abstract

Heterogeneously-integrated memory system is configured with various types of storage class memories (SCMs) and NAND flash memories. SCMs are faster than NAND flash, and they are divided into memory and storage types with their characteristics. NAND flash memories are also classified by the number of stored bits per memory cell. These non-volatile memories have trade-offs among access speed, capacity and bit cost. Therefore, mix and match of various non-volatile memories are essential to simultaneously achieve the best speed and cost of the storage. This paper proposes a design methodology with unique interaction of device, circuit and system to achieve the appropriate configurations in the heterogeneously-integrated memory system for application.

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Cited By

View all
  • (2020)Self-Clamping Programming in Narrow-Bridge Floating Gate Cells for Multi-Level Logic Non-Volatile Memory ApplicationsIEEE Journal of the Electron Devices Society10.1109/JEDS.2020.30059048(681-685)Online publication date: 2020
  • (2018)Maximizing Peformance/cost Figure of Merit of Storage-type SCM based SSD by Adding Small Capacity of Memory-type SCM2018 Non-Volatile Memory Technology Symposium (NVMTS)10.1109/NVMTS.2018.8603117(1-6)Online publication date: Oct-2018

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  1. Design of heterogeneously-integrated memory system with storage class memories and NAND flash memories

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      cover image ACM Conferences
      ASPDAC '19: Proceedings of the 24th Asia and South Pacific Design Automation Conference
      January 2019
      794 pages
      ISBN:9781450360074
      DOI:10.1145/3287624
      Permission to make digital or hard copies of part or all of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for third-party components of this work must be honored. For all other uses, contact the Owner/Author.

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      • IEICE ESS: Institute of Electronics, Information and Communication Engineers, Engineering Sciences Society
      • IEEE CAS
      • IEEE CEDA
      • IPSJ SIG-SLDM: Information Processing Society of Japan, SIG System LSI Design Methodology

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      Association for Computing Machinery

      New York, NY, United States

      Publication History

      Published: 21 January 2019

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      Author Tags

      1. NAND flash memory
      2. design methodology
      3. non-volatile memory system
      4. storage class memory

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      View all
      • (2020)Self-Clamping Programming in Narrow-Bridge Floating Gate Cells for Multi-Level Logic Non-Volatile Memory ApplicationsIEEE Journal of the Electron Devices Society10.1109/JEDS.2020.30059048(681-685)Online publication date: 2020
      • (2018)Maximizing Peformance/cost Figure of Merit of Storage-type SCM based SSD by Adding Small Capacity of Memory-type SCM2018 Non-Volatile Memory Technology Symposium (NVMTS)10.1109/NVMTS.2018.8603117(1-6)Online publication date: Oct-2018

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