Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

A characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are investigated. 1/f drain noise magnitude allows extraction of slow oxide interface trap density. Random ...

A characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are investigated. 1/f drain noise magnitude allows extraction of slow oxide interface trap density. Random ...

Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage ...